JPS54137984A - Manufacture of floating gate mos semiconductor device - Google Patents

Manufacture of floating gate mos semiconductor device

Info

Publication number
JPS54137984A
JPS54137984A JP4612078A JP4612078A JPS54137984A JP S54137984 A JPS54137984 A JP S54137984A JP 4612078 A JP4612078 A JP 4612078A JP 4612078 A JP4612078 A JP 4612078A JP S54137984 A JPS54137984 A JP S54137984A
Authority
JP
Japan
Prior art keywords
film
gate
poly
double
oxidized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4612078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6153869B2 (enrdf_load_stackoverflow
Inventor
Keizo Sakiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4612078A priority Critical patent/JPS54137984A/ja
Publication of JPS54137984A publication Critical patent/JPS54137984A/ja
Publication of JPS6153869B2 publication Critical patent/JPS6153869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP4612078A 1978-04-18 1978-04-18 Manufacture of floating gate mos semiconductor device Granted JPS54137984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4612078A JPS54137984A (en) 1978-04-18 1978-04-18 Manufacture of floating gate mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4612078A JPS54137984A (en) 1978-04-18 1978-04-18 Manufacture of floating gate mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS54137984A true JPS54137984A (en) 1979-10-26
JPS6153869B2 JPS6153869B2 (enrdf_load_stackoverflow) 1986-11-19

Family

ID=12738124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4612078A Granted JPS54137984A (en) 1978-04-18 1978-04-18 Manufacture of floating gate mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS54137984A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116670A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7037804B2 (ja) 2018-01-15 2022-03-17 国立大学法人広島大学 発電装置および自動車

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116670A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Also Published As

Publication number Publication date
JPS6153869B2 (enrdf_load_stackoverflow) 1986-11-19

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