JPS6153869B2 - - Google Patents

Info

Publication number
JPS6153869B2
JPS6153869B2 JP53046120A JP4612078A JPS6153869B2 JP S6153869 B2 JPS6153869 B2 JP S6153869B2 JP 53046120 A JP53046120 A JP 53046120A JP 4612078 A JP4612078 A JP 4612078A JP S6153869 B2 JPS6153869 B2 JP S6153869B2
Authority
JP
Japan
Prior art keywords
gate
film
oxide film
silicon film
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53046120A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54137984A (en
Inventor
Keizo Sakyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4612078A priority Critical patent/JPS54137984A/ja
Publication of JPS54137984A publication Critical patent/JPS54137984A/ja
Publication of JPS6153869B2 publication Critical patent/JPS6153869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP4612078A 1978-04-18 1978-04-18 Manufacture of floating gate mos semiconductor device Granted JPS54137984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4612078A JPS54137984A (en) 1978-04-18 1978-04-18 Manufacture of floating gate mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4612078A JPS54137984A (en) 1978-04-18 1978-04-18 Manufacture of floating gate mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS54137984A JPS54137984A (en) 1979-10-26
JPS6153869B2 true JPS6153869B2 (enrdf_load_stackoverflow) 1986-11-19

Family

ID=12738124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4612078A Granted JPS54137984A (en) 1978-04-18 1978-04-18 Manufacture of floating gate mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS54137984A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11492962B2 (en) 2018-01-15 2022-11-08 Hiroshima University Power generation device and automobile

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116670A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11492962B2 (en) 2018-01-15 2022-11-08 Hiroshima University Power generation device and automobile

Also Published As

Publication number Publication date
JPS54137984A (en) 1979-10-26

Similar Documents

Publication Publication Date Title
JP3312102B2 (ja) 不揮発性半導体記憶装置の製造方法
JPH0472763A (ja) 半導体装置およびその製造方法
EP0055558B1 (en) Method of manufacturing a semiconductor device
JPH11505675A (ja) フローティングゲート不揮発性メモリデバイス及びその製造方法
US4517732A (en) Method for fabricating an EEPROM
JP2525144B2 (ja) 不揮発性メモリセル及び関連トランジスタを含む集積構造体の製造方法
JPH11265987A (ja) 不揮発性メモリ及びその製造方法
JP3093096B2 (ja) 不揮発性メモリの製造方法
JPH04211177A (ja) 不揮発性半導体記憶装置およびその製造方法
US20030100153A1 (en) Method of manufacturing a semiconductor memory, and method of manufacturing a semiconductor device comprising the semiconductor memory
JP2734433B2 (ja) 不揮発性半導体記憶装置の製造方法
JP2833598B2 (ja) 不揮発性半導体記憶装置とその製造方法
JPS6153869B2 (enrdf_load_stackoverflow)
JPH05251711A (ja) 半導体集積回路及びその製造方法
JP4057081B2 (ja) 不揮発性半導体記憶装置の製造方法
JP3100759B2 (ja) 不揮発性半導体記憶装置の製造方法
JP3436315B2 (ja) Ｍｏｎｏｓ型半導体不揮発性記憶装置の製造方法及び、半導体装置の製造方法
JP3016607B2 (ja) 不揮発性メモリの製造方法
JP3433016B2 (ja) 不揮発性半導体記憶装置の製造方法
JP3397804B2 (ja) 不揮発性メモリの製造方法
US7329577B2 (en) Method of manufacturing nonvolatile semiconductor storage device
JPH0774274A (ja) 半導体装置の製造方法
JPH10189922A (ja) フラッシュメモリ素子の製造方法
JP3172081B2 (ja) 半導体装置及びその製造方法
JP3973616B2 (ja) 不揮発性半導体記憶装置の製造方法