JPS54132174A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54132174A
JPS54132174A JP4097778A JP4097778A JPS54132174A JP S54132174 A JPS54132174 A JP S54132174A JP 4097778 A JP4097778 A JP 4097778A JP 4097778 A JP4097778 A JP 4097778A JP S54132174 A JPS54132174 A JP S54132174A
Authority
JP
Japan
Prior art keywords
gate
cut
insulator film
gate insulator
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4097778A
Other languages
Japanese (ja)
Other versions
JPS6342422B2 (en
Inventor
Hatsuhide Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4097778A priority Critical patent/JPS54132174A/en
Publication of JPS54132174A publication Critical patent/JPS54132174A/en
Publication of JPS6342422B2 publication Critical patent/JPS6342422B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Abstract

PURPOSE:To ensure the protection from the abnormal voltage by connecting the source electrode of the FET containing the thick gate insulator film which operates with the depletion mode and is cut off when the input voltage exceeds the fixed level. CONSTITUTION:Depletion-type FET element Q5 is connected via drain resistance R between input terminal A and inner gate G6 of FET element Q6 to be protected. In other words, the gate and the source of element Q5 are connected in common to be then connected to the gate of element Q6, and diode D connecting to the substrate of Q5 is inserted to the contact between resistance R and the drain. In such constitution, the gate insulator film of Q5 is set thicker than the gate insulator film of Q6, and the source potential of Q5 is cut off immediately when it increases abnormally. Thus, gate G6 is cut off from terminal A.
JP4097778A 1978-04-06 1978-04-06 Semiconductor device Granted JPS54132174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4097778A JPS54132174A (en) 1978-04-06 1978-04-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4097778A JPS54132174A (en) 1978-04-06 1978-04-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54132174A true JPS54132174A (en) 1979-10-13
JPS6342422B2 JPS6342422B2 (en) 1988-08-23

Family

ID=12595491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4097778A Granted JPS54132174A (en) 1978-04-06 1978-04-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54132174A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5154778A (en) * 1974-11-08 1976-05-14 Fujitsu Ltd
JPS5181579A (en) * 1975-01-16 1976-07-16 Hitachi Ltd
JPS532087A (en) * 1976-06-29 1978-01-10 Toshiba Corp Input protection circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5154778A (en) * 1974-11-08 1976-05-14 Fujitsu Ltd
JPS5181579A (en) * 1975-01-16 1976-07-16 Hitachi Ltd
JPS532087A (en) * 1976-06-29 1978-01-10 Toshiba Corp Input protection circuit

Also Published As

Publication number Publication date
JPS6342422B2 (en) 1988-08-23

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