JPS54122697A - Method and apparatus for forming silicon oxide ion - Google Patents
Method and apparatus for forming silicon oxide ionInfo
- Publication number
- JPS54122697A JPS54122697A JP3079078A JP3079078A JPS54122697A JP S54122697 A JPS54122697 A JP S54122697A JP 3079078 A JP3079078 A JP 3079078A JP 3079078 A JP3079078 A JP 3079078A JP S54122697 A JPS54122697 A JP S54122697A
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- ions
- oxide ion
- forming silicon
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052814 silicon oxide Inorganic materials 0.000 title abstract 5
- -1 silicon dioxide ions Chemical class 0.000 abstract 3
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3079078A JPS54122697A (en) | 1978-03-16 | 1978-03-16 | Method and apparatus for forming silicon oxide ion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3079078A JPS54122697A (en) | 1978-03-16 | 1978-03-16 | Method and apparatus for forming silicon oxide ion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54122697A true JPS54122697A (en) | 1979-09-22 |
| JPS6116731B2 JPS6116731B2 (enrdf_load_stackoverflow) | 1986-05-01 |
Family
ID=12313461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3079078A Granted JPS54122697A (en) | 1978-03-16 | 1978-03-16 | Method and apparatus for forming silicon oxide ion |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54122697A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59116192A (ja) * | 1982-12-21 | 1984-07-04 | Fujitsu Ltd | 分子線結晶成長方法 |
| JPS59217332A (ja) * | 1983-05-24 | 1984-12-07 | Mitsubishi Electric Corp | 二酸化硅素膜の製造方法 |
| WO1987002026A1 (en) * | 1984-05-28 | 1987-04-09 | Shuhara Akira | Process for producing silicon dioxide film |
-
1978
- 1978-03-16 JP JP3079078A patent/JPS54122697A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59116192A (ja) * | 1982-12-21 | 1984-07-04 | Fujitsu Ltd | 分子線結晶成長方法 |
| JPS59217332A (ja) * | 1983-05-24 | 1984-12-07 | Mitsubishi Electric Corp | 二酸化硅素膜の製造方法 |
| WO1987002026A1 (en) * | 1984-05-28 | 1987-04-09 | Shuhara Akira | Process for producing silicon dioxide film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6116731B2 (enrdf_load_stackoverflow) | 1986-05-01 |
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