JPS54116884A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54116884A JPS54116884A JP2418378A JP2418378A JPS54116884A JP S54116884 A JPS54116884 A JP S54116884A JP 2418378 A JP2418378 A JP 2418378A JP 2418378 A JP2418378 A JP 2418378A JP S54116884 A JPS54116884 A JP S54116884A
- Authority
- JP
- Japan
- Prior art keywords
- concavity
- region
- film
- sio
- base region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2418378A JPS54116884A (en) | 1978-03-03 | 1978-03-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2418378A JPS54116884A (en) | 1978-03-03 | 1978-03-03 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54116884A true JPS54116884A (en) | 1979-09-11 |
| JPS5731663B2 JPS5731663B2 (enExample) | 1982-07-06 |
Family
ID=12131215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2418378A Granted JPS54116884A (en) | 1978-03-03 | 1978-03-03 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54116884A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6098667A (ja) * | 1983-11-02 | 1985-06-01 | Seiko Epson Corp | 半導体装置 |
| WO1985003597A1 (en) * | 1984-02-03 | 1985-08-15 | Advanced Micro Devices, Inc. | A bipolar transistor with active elements formed in slots |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61189289U (enExample) * | 1985-05-17 | 1986-11-26 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51145276A (en) * | 1975-06-10 | 1976-12-14 | Mitsubishi Electric Corp | Semiconductor device |
-
1978
- 1978-03-03 JP JP2418378A patent/JPS54116884A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51145276A (en) * | 1975-06-10 | 1976-12-14 | Mitsubishi Electric Corp | Semiconductor device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6098667A (ja) * | 1983-11-02 | 1985-06-01 | Seiko Epson Corp | 半導体装置 |
| WO1985003597A1 (en) * | 1984-02-03 | 1985-08-15 | Advanced Micro Devices, Inc. | A bipolar transistor with active elements formed in slots |
| US4733287A (en) * | 1984-02-03 | 1988-03-22 | Advanced Micro Devices, Inc. | Integrated circuit structure with active elements of bipolar transistor formed in slots |
| US4749661A (en) * | 1984-02-03 | 1988-06-07 | Advanced Micro Devices, Inc. | Vertical slot bottom bipolar transistor structure |
| US4795721A (en) * | 1984-02-03 | 1989-01-03 | Advanced Micro Devices, Inc. | Walled slot devices and method of making same |
| US4803176A (en) * | 1984-02-03 | 1989-02-07 | Advanced Micro Devices, Inc. | Integrated circuit structure with active device in merged slot and method of making same |
| JPH06101470B2 (ja) * | 1984-02-03 | 1994-12-12 | アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド | スロット内に形成されたバイポーラトランジスタからなる能動要素を有する集積回路装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5731663B2 (enExample) | 1982-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54589A (en) | Burying method of insulator | |
| JPS54116884A (en) | Semiconductor device | |
| JPS54128298A (en) | Selective oxidizing method | |
| JPS55105340A (en) | Semiconductor device and its manufacturing method | |
| JPS5443683A (en) | Production of transistor | |
| JPS52129276A (en) | Production of semiconductor device | |
| JPS57133637A (en) | Semiconductor integrated circuit device | |
| JPS5434767A (en) | Formation method of n-type layer | |
| JPS52130575A (en) | Semiconductor device and its preparation | |
| JPS55113376A (en) | Manufacturing method of semiconductor device | |
| JPS5591866A (en) | Manufacture of semiconductor device | |
| JPS5429587A (en) | Semiconductor device | |
| JPS5395570A (en) | Forming method of epitaxial layer | |
| JPS54140876A (en) | Manufacture of semiconductor element | |
| JPS54158889A (en) | Manufacture of semiconductor device | |
| JPS54111793A (en) | Semiconductor integrated circuit device and its manufacture | |
| JPS5489594A (en) | Manufacture for integrated circuit | |
| JPS5742146A (en) | Manufacture of semiconductor device | |
| JPS5776873A (en) | Manufacture of semiconductor device | |
| JPS5446468A (en) | Manufacture of inverted-trapezoid structure | |
| JPS54132167A (en) | Manufacture of semiconductor device | |
| JPS5685852A (en) | Manufacture of bipolar type integrated circuit | |
| JPS5491185A (en) | Semiconductor divece | |
| JPS5522893A (en) | Semiconductor integrated circuit device and its manufacturing method | |
| JPS5373976A (en) | Manufacture for schottky barrier type semiconductor device |