JPS54106177A - Semiconductor control/rectification device - Google Patents

Abstract

PURPOSE: To omit the airtight container by using the copper-carbon fiber composite material featuring the identical thermal expansion coefficient to the semiconductor to the electrode material of the semiconductor substrate containing four layers of different conducting adjacent layers to each other and then coating the periphery of the substrate with an insulator to protect it from contamination and the external force.

CONSTITUTION: The 4-layer structure is composed of PE-layer 2, NB-layer 3, PB- layer 4 and NE-layer 5 respectively, and circular piercing diffusion part 6 is provided surrounding these four layers. Thus, semiconductor substrate 1 is formed. Circular groove 8 is drilled around the boundary between layer 2 and 3 to to isolate part 6 (part of layer 4) from layer 2. Thus, groove 8 is provided on the surface of layer 2 to simplify the structure inside substrate 1. After this, ohmic contact 12 is coated on layer 4, and there anode electrode 17 composed of the copper-carbon (carbon 20%) fiber composite material is adhered via solder 19. At the same time, cathode 18 of the same material as electrode 17 is adhered also to contact 13 coated on layer 5 with use of solder 20, and then the whole part is surrounded with insulator 21 of resin, glass or the like.

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