JPS54106171A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54106171A
JPS54106171A JP1246278A JP1246278A JPS54106171A JP S54106171 A JPS54106171 A JP S54106171A JP 1246278 A JP1246278 A JP 1246278A JP 1246278 A JP1246278 A JP 1246278A JP S54106171 A JPS54106171 A JP S54106171A
Authority
JP
Japan
Prior art keywords
glass
substrate
bonded
copper
composite material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1246278A
Other languages
Japanese (ja)
Inventor
Masao Tsuruoka
Keiichi Morita
Hideyuki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1246278A priority Critical patent/JPS54106171A/en
Publication of JPS54106171A publication Critical patent/JPS54106171A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To eliminate the crack of the glass protective film by forming the electrode plate with the copper-carbon fiber composite material featuring the thermal expansion coefficient controlled to be almost identical to the semiconductor.
CONSTITUTION: The end area of pn-junction 2 of Si substrate 1 is exposed into circular groove 3 and then coated with the glass film. Support electrode 6 is made of the copper-carbon fiber composite material of a composition of 80% copper and 20% carbon (volume ratio) and bonded to substrate 1. Such composite material produces virtually no stress caused by the difference of the thermal expansion when bonded to Si. Upper electrode 8 is made of the same material as electrode 6 and then bonded on the substrate via solder 7, with the circumference surface covered with resin 9. In such method, no glass crack is caused even with a large-sized substrate. Thus, the glass can function as the stabilizing insulator film, obtaining a resin-coated semiconductor device.
COPYRIGHT: (C)1979,JPO&Japio
JP1246278A 1978-02-08 1978-02-08 Semiconductor device Pending JPS54106171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1246278A JPS54106171A (en) 1978-02-08 1978-02-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1246278A JPS54106171A (en) 1978-02-08 1978-02-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54106171A true JPS54106171A (en) 1979-08-20

Family

ID=11806013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1246278A Pending JPS54106171A (en) 1978-02-08 1978-02-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54106171A (en)

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