JPS54109778A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54109778A JPS54109778A JP1653478A JP1653478A JPS54109778A JP S54109778 A JPS54109778 A JP S54109778A JP 1653478 A JP1653478 A JP 1653478A JP 1653478 A JP1653478 A JP 1653478A JP S54109778 A JPS54109778 A JP S54109778A
- Authority
- JP
- Japan
- Prior art keywords
- ceramics
- insulator
- constitution
- groove
- featuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000009422 external insulation Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To ensure the moat glassivation featuring a high external insulation through a simple method of pasting the insulator. CONSTITUTION:The pn-junction J is exposed at convex part 11a of Si pellet 11. Ceramics 17 is bonded onto semiconductor 16 around part 11a concentrically to part 11a, and groove 12 is formed between part 11a and insulator 17. Glass 13 is sintered and filled into groove 12 to protect the pn-junction terminal. In such constitution, the level of ceramics 17 is not higher than the formation surface of ohmic connection 4, so the connection can be performed after end of the high-temperature process such as the glass sintering or the like. Thus, a device featuring a high insulation can be obtained with no evil effect for the contour formation of the mask evaporation method, the photo resist method and others.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1653478A JPS54109778A (en) | 1978-02-17 | 1978-02-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1653478A JPS54109778A (en) | 1978-02-17 | 1978-02-17 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54109778A true JPS54109778A (en) | 1979-08-28 |
Family
ID=11918923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1653478A Pending JPS54109778A (en) | 1978-02-17 | 1978-02-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54109778A (en) |
-
1978
- 1978-02-17 JP JP1653478A patent/JPS54109778A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5563840A (en) | Semiconductor integrated device | |
| JPS54109778A (en) | Semiconductor device | |
| JPS5575249A (en) | Semiconductor device | |
| JPS5784138A (en) | Manufacture of mesa semiconductor device | |
| JPS54101278A (en) | Manufacture for semiconductor device | |
| JPS5636145A (en) | Thin semiconductor integrated circuit device and its manufacture | |
| JPS5539631A (en) | Semiconductor device | |
| JPS56104749A (en) | Glass paste for printing | |
| JPS54102980A (en) | Mos-type semiconductor device and its manufacture | |
| JPS54154281A (en) | Bipolar semiconductor device and its manufacture | |
| JPS57167653A (en) | Manufacture of semiconductor device | |
| JPS5248978A (en) | Process for production of semiconductor device | |
| JPS54114185A (en) | Semiconductor device | |
| JPS5536976A (en) | Production of semiconductor device | |
| JPS5227362A (en) | Formation method of passivation film | |
| JPS5339073A (en) | Semiconductor device | |
| JPS5526669A (en) | Manufacturing semiconductor device | |
| JPS55115337A (en) | Manufacture of semiconductor device | |
| JPS5272186A (en) | Production of mis type semiconductor device | |
| JPS6449261A (en) | Manufacture of bipolar transistor | |
| JPS54125973A (en) | Semiconductor device | |
| JPS5468173A (en) | Semiconductor device and its manufacture | |
| JPS54123873A (en) | Package construction for semiconductor device | |
| JPS5394876A (en) | Manufacture of semiconductor device | |
| JPS54106171A (en) | Semiconductor device |