JPS54104770A - Heat treatment method for 3-5 group compound semiconductor - Google Patents

Heat treatment method for 3-5 group compound semiconductor

Info

Publication number
JPS54104770A
JPS54104770A JP1160578A JP1160578A JPS54104770A JP S54104770 A JPS54104770 A JP S54104770A JP 1160578 A JP1160578 A JP 1160578A JP 1160578 A JP1160578 A JP 1160578A JP S54104770 A JPS54104770 A JP S54104770A
Authority
JP
Japan
Prior art keywords
partial pressure
heat treatment
ash
substrate
ion injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1160578A
Other languages
English (en)
Other versions
JPS6040694B2 (ja
Inventor
Jiro Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1160578A priority Critical patent/JPS6040694B2/ja
Publication of JPS54104770A publication Critical patent/JPS54104770A/ja
Publication of JPS6040694B2 publication Critical patent/JPS6040694B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP1160578A 1978-02-03 1978-02-03 ３−５族化合物半導体の熱処理法 Expired JPS6040694B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1160578A JPS6040694B2 (ja) 1978-02-03 1978-02-03 ３−５族化合物半導体の熱処理法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1160578A JPS6040694B2 (ja) 1978-02-03 1978-02-03 ３−５族化合物半導体の熱処理法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP16921686A Division JPS6211225A (ja) 1986-07-18 1986-07-18 ３−ｖ族化合物半導体の熱処理法
JP16921786A Division JPS6211226A (ja) 1986-07-18 1986-07-18 ３−ｖ族化合物半導体の熱処理法

Publications (2)

Publication Number Publication Date
JPS54104770A true JPS54104770A (en) 1979-08-17
JPS6040694B2 JPS6040694B2 (ja) 1985-09-12

Family

ID=11782528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1160578A Expired JPS6040694B2 (ja) 1978-02-03 1978-02-03 ３−５族化合物半導体の熱処理法

Country Status (1)

Country Link
JP (1) JPS6040694B2 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642334A (en) * 1979-09-13 1981-04-20 Sumitomo Electric Ind Ltd Heat treatment of compound semiconductor
JPS5643735A (en) * 1979-09-18 1981-04-22 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS57120330A (en) * 1981-01-19 1982-07-27 Toshiba Corp Manufacture of compound semiconductor device
JPS57130419A (en) * 1981-02-04 1982-08-12 Sharp Corp Heat treatment for semiconductor
JPS57166025A (en) * 1981-04-06 1982-10-13 Matsushita Electric Ind Co Ltd Heat treatment method for compound semiconductor device
JPS61501805A (ja) * 1982-12-27 1986-08-21 ヒユ−ズ・エアクラフト・カンパニ− イオン注入チャネル層を有するＧａＡｓＦＥＴ製造プロセス
JPS61199641A (ja) * 1985-02-28 1986-09-04 Oki Electric Ind Co Ltd 化合物半導体素子の製造方法
JPS61215300A (ja) * 1985-03-15 1986-09-25 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ３―５族化合物半導体基板のための開放管型拡散方法
JPS6273626A (ja) * 1985-09-26 1987-04-04 Matsushita Electric Ind Co Ltd 化合物半導体の処理装置
JPS62206839A (ja) * 1986-03-06 1987-09-11 Mitsubishi Monsanto Chem Co 発光ダイオ−ド用エピタキシヤルウエハの製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642334A (en) * 1979-09-13 1981-04-20 Sumitomo Electric Ind Ltd Heat treatment of compound semiconductor
JPS5643735A (en) * 1979-09-18 1981-04-22 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6043658B2 (ja) * 1979-09-18 1985-09-30 松下電器産業株式会社 半導体装置の製造方法
JPH0131291B2 (ja) * 1981-01-19 1989-06-26 Tokyo Shibaura Electric Co
JPS57120330A (en) * 1981-01-19 1982-07-27 Toshiba Corp Manufacture of compound semiconductor device
JPS57130419A (en) * 1981-02-04 1982-08-12 Sharp Corp Heat treatment for semiconductor
JPS57166025A (en) * 1981-04-06 1982-10-13 Matsushita Electric Ind Co Ltd Heat treatment method for compound semiconductor device
JPS61501805A (ja) * 1982-12-27 1986-08-21 ヒユ−ズ・エアクラフト・カンパニ− イオン注入チャネル層を有するＧａＡｓＦＥＴ製造プロセス
JPS61199641A (ja) * 1985-02-28 1986-09-04 Oki Electric Ind Co Ltd 化合物半導体素子の製造方法
JPS61215300A (ja) * 1985-03-15 1986-09-25 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ３―５族化合物半導体基板のための開放管型拡散方法
JPH055800B2 (ja) * 1985-03-15 1993-01-25 Intaanashonaru Bijinesu Mashiinzu Corp
JPS6273626A (ja) * 1985-09-26 1987-04-04 Matsushita Electric Ind Co Ltd 化合物半導体の処理装置
JPS62206839A (ja) * 1986-03-06 1987-09-11 Mitsubishi Monsanto Chem Co 発光ダイオ−ド用エピタキシヤルウエハの製造方法

Also Published As

Publication number Publication date
JPS6040694B2 (ja) 1985-09-12

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