JPS53977A - Preparation of fine pattern - Google Patents
Preparation of fine patternInfo
- Publication number
- JPS53977A JPS53977A JP7452276A JP7452276A JPS53977A JP S53977 A JPS53977 A JP S53977A JP 7452276 A JP7452276 A JP 7452276A JP 7452276 A JP7452276 A JP 7452276A JP S53977 A JPS53977 A JP S53977A
- Authority
- JP
- Japan
- Prior art keywords
- fine pattern
- preparation
- radiation
- prepare
- carrying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE: To prepare a fine pattern by carrying out ionic processing through use of a mask developed by the application of radiation to epoxidized polybutadiene.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7452276A JPS53977A (en) | 1976-06-25 | 1976-06-25 | Preparation of fine pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7452276A JPS53977A (en) | 1976-06-25 | 1976-06-25 | Preparation of fine pattern |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53977A true JPS53977A (en) | 1978-01-07 |
JPS5645292B2 JPS5645292B2 (en) | 1981-10-26 |
Family
ID=13549727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7452276A Granted JPS53977A (en) | 1976-06-25 | 1976-06-25 | Preparation of fine pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53977A (en) |
-
1976
- 1976-06-25 JP JP7452276A patent/JPS53977A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5645292B2 (en) | 1981-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51118333A (en) | Pattern recognition system | |
JPS51120180A (en) | Pattern printing device | |
JPS5211774A (en) | Method of detecting relative position of patterns | |
JPS5434777A (en) | Mask aligner | |
JPS542668A (en) | Manufacture of semiconductor device | |
JPS51126073A (en) | Pattern printing equpment made available by photo-etching method | |
JPS53977A (en) | Preparation of fine pattern | |
JPS52173A (en) | X-ray etching mask | |
JPS51111073A (en) | Fine pattern forming | |
JPS5350397A (en) | Preparation of 4-hydroxycyclopent-2-ene-1-one | |
JPS52104066A (en) | Selective etching method of thermosetting organic materials | |
JPS5228267A (en) | Minute processing | |
JPS5277670A (en) | Semiconductive device | |
JPS51151073A (en) | Method to adjust the position of an mask for an integrated circuit | |
JPS5435681A (en) | Alignment device | |
JPS51139267A (en) | Photo-mask | |
JPS5313880A (en) | Fine patterning method | |
JPS52117072A (en) | Hard mask | |
JPS51117848A (en) | Pattern resemblance calculator | |
JPS52117070A (en) | Exposing mask for photo-etching | |
JPS51140455A (en) | Program control device | |
JPS52119079A (en) | Electron beam exposure | |
JPS51118369A (en) | Manufacturing process for simiconduator unit | |
JPS5396671A (en) | Manufacture of semiconductor device | |
JPS52151382A (en) | Preparation of 1,2-polybutadiene |