JPS5330277A - Mask for x-ray exposure - Google Patents
Mask for x-ray exposureInfo
- Publication number
- JPS5330277A JPS5330277A JP10452876A JP10452876A JPS5330277A JP S5330277 A JPS5330277 A JP S5330277A JP 10452876 A JP10452876 A JP 10452876A JP 10452876 A JP10452876 A JP 10452876A JP S5330277 A JPS5330277 A JP S5330277A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- ray exposure
- substrate
- visibly
- windows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10452876A JPS5330277A (en) | 1976-09-01 | 1976-09-01 | Mask for x-ray exposure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10452876A JPS5330277A (en) | 1976-09-01 | 1976-09-01 | Mask for x-ray exposure |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5330277A true JPS5330277A (en) | 1978-03-22 |
JPS5326113B2 JPS5326113B2 (ja) | 1978-07-31 |
Family
ID=14382982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10452876A Granted JPS5330277A (en) | 1976-09-01 | 1976-09-01 | Mask for x-ray exposure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5330277A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63133524A (ja) * | 1986-11-25 | 1988-06-06 | Matsushita Electronics Corp | X線マスクおよびその製造方法 |
RU2785012C1 (ru) * | 2022-01-25 | 2022-12-01 | Федеральное государственное бюджетное учреждение науки, Институт Ядерной Физики им. Г.И. Будкера Сибирского отделения (ИЯФ СО РАН) | Рентгеновская маска |
-
1976
- 1976-09-01 JP JP10452876A patent/JPS5330277A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63133524A (ja) * | 1986-11-25 | 1988-06-06 | Matsushita Electronics Corp | X線マスクおよびその製造方法 |
RU2785012C1 (ru) * | 2022-01-25 | 2022-12-01 | Федеральное государственное бюджетное учреждение науки, Институт Ядерной Физики им. Г.И. Будкера Сибирского отделения (ИЯФ СО РАН) | Рентгеновская маска |
Also Published As
Publication number | Publication date |
---|---|
JPS5326113B2 (ja) | 1978-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS542720A (en) | Forming method of photopolymerized image | |
JPS53108390A (en) | Semiconductor device and its manufacture | |
JPS5320767A (en) | X-ray mask supporting underlayer and its production | |
JPS5321576A (en) | Mask for x-ray exposure | |
JPS5325113A (en) | Method for prevention of falsification | |
JPS5312274A (en) | Production of mask for x-ray exposure | |
JPS5330277A (en) | Mask for x-ray exposure | |
JPS5431282A (en) | Pattern formation method | |
JPS5349953A (en) | Soft x-ray transcription mask | |
JPS542657A (en) | Manufacture for semiconductor device | |
JPS5329073A (en) | Mask for x-ray exposure | |
JPS5387668A (en) | Forming method of patterns | |
JPS52117557A (en) | Soft x-ray exposure mask and its manufacturing method | |
JPS53107274A (en) | Forming method of patterns | |
JPS5429975A (en) | Photo mask | |
JPS5399772A (en) | Optical mask | |
JPS5360177A (en) | Photo mask | |
JPS5359370A (en) | Positioning method | |
JPS53108773A (en) | Production of semiconductor device | |
JPS53117385A (en) | Exposure mask for patterning | |
JPS5299775A (en) | Pattern exposing method | |
JPS545659A (en) | Manufacture of semiconductor device | |
JPS5396678A (en) | Method and apparatus for mask pattern exposure | |
JPS5341981A (en) | Plate for photomask | |
JPS53135844A (en) | Photochemical etching procee |