JPS53142878A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53142878A JPS53142878A JP5844777A JP5844777A JPS53142878A JP S53142878 A JPS53142878 A JP S53142878A JP 5844777 A JP5844777 A JP 5844777A JP 5844777 A JP5844777 A JP 5844777A JP S53142878 A JPS53142878 A JP S53142878A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- surfatial
- level
- increase
- conduction type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5844777A JPS53142878A (en) | 1977-05-19 | 1977-05-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5844777A JPS53142878A (en) | 1977-05-19 | 1977-05-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53142878A true JPS53142878A (en) | 1978-12-12 |
Family
ID=13084653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5844777A Pending JPS53142878A (en) | 1977-05-19 | 1977-05-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53142878A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251082A (ja) * | 1985-04-26 | 1986-11-08 | Rohm Co Ltd | 半導体装置 |
US4801995A (en) * | 1984-12-28 | 1989-01-31 | Kabushiki Kaisha Toshiba | Semiconductor device |
-
1977
- 1977-05-19 JP JP5844777A patent/JPS53142878A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4801995A (en) * | 1984-12-28 | 1989-01-31 | Kabushiki Kaisha Toshiba | Semiconductor device |
JPS61251082A (ja) * | 1985-04-26 | 1986-11-08 | Rohm Co Ltd | 半導体装置 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53142878A (en) | Semiconductor device | |
JPS5383472A (en) | Semiconductor element | |
JPS51150284A (en) | Semiconductor unvolatile memory unit | |
JPS5419675A (en) | Production of semiconductor devices | |
JPS51114069A (en) | Semiconductor device | |
JPS53116087A (en) | Manufacture for multilayer wiring | |
JPS5394780A (en) | Manufacture of semiconductor device | |
JPS52114285A (en) | Mis type semiconductor device | |
JPS53110389A (en) | Resistance forming method for semiconductor device | |
JPS53134373A (en) | Semiconductor integrated circuit device | |
JPS53123683A (en) | Manufacture of wiring substrate | |
JPS5339088A (en) | Insulated gate type field effect semiconductor device | |
JPS5383475A (en) | Reverse conducting thyristor | |
JPS5226166A (en) | Semi-conductor unit | |
JPS5366369A (en) | Semiconductor device | |
JPS52104072A (en) | High voltage semiconductor device | |
JPS5429092A (en) | Constitution of cable joint | |
JPS51140489A (en) | Method of fabricating semiconductor device | |
JPS5324781A (en) | Semiconductor device | |
JPS5395583A (en) | Mesa type semiconductor device | |
JPS5383476A (en) | Reverse conducting thyristor | |
JPS53107283A (en) | Thyristor | |
JPS52154375A (en) | Semiconductor device | |
JPS5231691A (en) | Semiconductor luminous device | |
JPS5366380A (en) | Power transistor |