JPS5366380A - Power transistor - Google Patents

Power transistor

Info

Publication number
JPS5366380A
JPS5366380A JP14270476A JP14270476A JPS5366380A JP S5366380 A JPS5366380 A JP S5366380A JP 14270476 A JP14270476 A JP 14270476A JP 14270476 A JP14270476 A JP 14270476A JP S5366380 A JPS5366380 A JP S5366380A
Authority
JP
Japan
Prior art keywords
power transistor
electrode
current
emitter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14270476A
Other languages
Japanese (ja)
Inventor
Yoshihiko Watari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14270476A priority Critical patent/JPS5366380A/en
Publication of JPS5366380A publication Critical patent/JPS5366380A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the yield rate reduction due to local short circuit of the emitter electrode and the base electrode, by providing conducting material b blown with a current more than the specified current between the emitter layers of a plurality independently provided on the base layer and the total electrode connected to them.
JP14270476A 1976-11-26 1976-11-26 Power transistor Pending JPS5366380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14270476A JPS5366380A (en) 1976-11-26 1976-11-26 Power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14270476A JPS5366380A (en) 1976-11-26 1976-11-26 Power transistor

Publications (1)

Publication Number Publication Date
JPS5366380A true JPS5366380A (en) 1978-06-13

Family

ID=15321612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14270476A Pending JPS5366380A (en) 1976-11-26 1976-11-26 Power transistor

Country Status (1)

Country Link
JP (1) JPS5366380A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4682204A (en) * 1982-03-09 1987-07-21 Tokyo Shibaura Denki Kabushiki Kaisha Fuse element for integrated circuit memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4682204A (en) * 1982-03-09 1987-07-21 Tokyo Shibaura Denki Kabushiki Kaisha Fuse element for integrated circuit memory device

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