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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP2270477ApriorityCriticalpatent/JPS53108374A/en
Publication of JPS53108374ApublicationCriticalpatent/JPS53108374A/en
PURPOSE: To form the protective film without special material or process, by using Al-Si alloy alyer as the elctrode and wiring and by heat-treating at comparatively low temperature under acid atmosphere, in the protective film for electrode and wiring for integrated circuits.
COPYRIGHT: (C)1978,JPO&Japio
JP2270477A1977-03-041977-03-04Growing method for silicon oxide film
PendingJPS53108374A
(en)