JPS53108029A - Method of making high purity silicon having uniform shape - Google Patents

Method of making high purity silicon having uniform shape

Info

Publication number
JPS53108029A
JPS53108029A JP2221277A JP2221277A JPS53108029A JP S53108029 A JPS53108029 A JP S53108029A JP 2221277 A JP2221277 A JP 2221277A JP 2221277 A JP2221277 A JP 2221277A JP S53108029 A JPS53108029 A JP S53108029A
Authority
JP
Japan
Prior art keywords
high purity
uniform shape
purity silicon
making high
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2221277A
Other languages
English (en)
Other versions
JPS5645851B2 (ja
Inventor
Yoshifumi Yakagi
Atsushi Yusa
Nagao Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Priority to JP2221277A priority Critical patent/JPS53108029A/ja
Priority to DE2808461A priority patent/DE2808461C2/de
Priority to DK092178A priority patent/DK153223C/da
Priority to US05/882,819 priority patent/US4147814A/en
Priority to CA298,321A priority patent/CA1098011A/en
Publication of JPS53108029A publication Critical patent/JPS53108029A/ja
Publication of JPS5645851B2 publication Critical patent/JPS5645851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2221277A 1977-03-03 1977-03-03 Method of making high purity silicon having uniform shape Granted JPS53108029A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2221277A JPS53108029A (en) 1977-03-03 1977-03-03 Method of making high purity silicon having uniform shape
DE2808461A DE2808461C2 (de) 1977-03-03 1978-02-28 Verfahren zur Herstellung von hochreinen Siliziumstäben mit gleichförmiger Querschnittsgestalt
DK092178A DK153223C (da) 1977-03-03 1978-03-01 Fremgangsmaade og apparat til fremstilling af siliciumstave med ensartet tvaersnit
US05/882,819 US4147814A (en) 1977-03-03 1978-03-02 Method of manufacturing high-purity silicon rods having a uniform sectional shape
CA298,321A CA1098011A (en) 1977-03-03 1978-03-02 Method of manufacturing high-purity silicon rods having a uniform sectional shape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2221277A JPS53108029A (en) 1977-03-03 1977-03-03 Method of making high purity silicon having uniform shape

Publications (2)

Publication Number Publication Date
JPS53108029A true JPS53108029A (en) 1978-09-20
JPS5645851B2 JPS5645851B2 (ja) 1981-10-29

Family

ID=12076485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2221277A Granted JPS53108029A (en) 1977-03-03 1977-03-03 Method of making high purity silicon having uniform shape

Country Status (5)

Country Link
US (1) US4147814A (ja)
JP (1) JPS53108029A (ja)
CA (1) CA1098011A (ja)
DE (1) DE2808461C2 (ja)
DK (1) DK153223C (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016510305A (ja) * 2013-03-18 2016-04-07 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 多結晶シリコンの堆積法
WO2016103608A1 (ja) * 2014-12-25 2016-06-30 信越化学工業株式会社 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、ｆｚ単結晶シリコンの製造方法

Families Citing this family (33)

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US4259278A (en) * 1979-07-09 1981-03-31 Ultra Carbon Corporation Method of reshaping warped graphite enclosures and the like
US4464222A (en) * 1980-07-28 1984-08-07 Monsanto Company Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases
US4309241A (en) * 1980-07-28 1982-01-05 Monsanto Company Gas curtain continuous chemical vapor deposition production of semiconductor bodies
US4559219A (en) * 1984-04-02 1985-12-17 General Electric Company Reducing powder formation in the production of high-purity silicon
FR2572312B1 (fr) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4724160A (en) * 1986-07-28 1988-02-09 Dow Corning Corporation Process for the production of semiconductor materials
US4826668A (en) * 1987-06-11 1989-05-02 Union Carbide Corporation Process for the production of ultra high purity polycrystalline silicon
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
IT1246772B (it) * 1989-12-26 1994-11-26 Advanced Silicon Materials Inc ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5894887A (en) * 1995-11-30 1999-04-20 Applied Materials, Inc. Ceramic dome temperature control using heat pipe structure and method
DE19608885B4 (de) * 1996-03-07 2006-11-16 Wacker Chemie Ag Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern
US6544333B2 (en) * 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
JP4812938B2 (ja) 1997-12-15 2011-11-09 レック シリコン インコーポレイテッド 多結晶シリコン棒製造用化学的蒸気析着方式
US6623801B2 (en) 2001-07-30 2003-09-23 Komatsu Ltd. Method of producing high-purity polycrystalline silicon
US6503563B1 (en) * 2001-10-09 2003-01-07 Komatsu Ltd. Method of producing polycrystalline silicon for semiconductors from saline gas
CN100423856C (zh) * 2003-08-20 2008-10-08 中国第一汽车集团公司 一种提高内花键尼龙润滑涂层粘结强度的方法
CN100387362C (zh) * 2006-06-28 2008-05-14 蔡国华 用聚醚醚酮粉末喷涂金属制品表面的方法
JP5119856B2 (ja) * 2006-11-29 2013-01-16 三菱マテリアル株式会社 トリクロロシラン製造装置
US8961689B2 (en) * 2008-03-26 2015-02-24 Gtat Corporation Systems and methods for distributing gas in a chemical vapor deposition reactor
WO2009128888A1 (en) * 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
CN102047066B (zh) * 2008-04-14 2013-01-16 赫姆洛克半导体公司 用于沉积材料的制造设备和其中使用的电极
JP5762949B2 (ja) * 2008-04-14 2015-08-12 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
CN101476153B (zh) * 2008-12-25 2011-12-07 青岛科技大学 多晶硅的还原生产工艺及其生产用还原炉
DE102009003368B3 (de) * 2009-01-22 2010-03-25 G+R Polysilicon Gmbh Reaktor zur Herstellung von polykristallinem Silizium nach dem Monosilan-Prozess
JP5651104B2 (ja) * 2009-02-27 2015-01-07 株式会社トクヤマ 多結晶シリコンロッド及びその製造装置
JP5477145B2 (ja) * 2009-04-28 2014-04-23 三菱マテリアル株式会社 多結晶シリコン反応炉
KR101708058B1 (ko) * 2009-07-15 2017-02-17 미쓰비시 마테리알 가부시키가이샤 다결정 실리콘의 제조 방법, 다결정 실리콘의 제조 장치, 및 다결정 실리콘
WO2011116273A2 (en) * 2010-03-19 2011-09-22 Gt Solar Incorporated System and method for polycrystalline silicon deposition
US10494714B2 (en) 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
DE102011080866A1 (de) 2011-08-12 2013-02-14 Wacker Chemie Ag Verfahren zur Herstellung eines einkristallinen Stabes aus Silicium
DE102015209008A1 (de) * 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Zersetzung von Monosilan

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
NL251143A (ja) * 1959-05-04
NL256017A (ja) * 1959-09-23 1900-01-01
NL256255A (ja) * 1959-11-02
US3941906A (en) * 1973-03-01 1976-03-02 Theodore Bostroem Hot dip metallizing process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016510305A (ja) * 2013-03-18 2016-04-07 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 多結晶シリコンの堆積法
WO2016103608A1 (ja) * 2014-12-25 2016-06-30 信越化学工業株式会社 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、ｆｚ単結晶シリコンの製造方法
JP2016121052A (ja) * 2014-12-25 2016-07-07 信越化学工業株式会社 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、ｆｚ単結晶シリコンの製造方法
US10800659B2 (en) 2014-12-25 2020-10-13 Shin-Etsu Chemical Co., Ltd. Polycrystalline silicon rod, processing method for polycrystalline silicon rod, method for evaluating polycrystalline silicon rod, and method for producing FZ single crystal silicon
US11167994B2 (en) 2014-12-25 2021-11-09 Shin-Etsu Chemical Co., Ltd. Polycrystalline silicon rod, processing method for polycrystalline silicon rod, method for evaluating polycrystalline silicon rod, and method for producing FZ single crystal silicon

Also Published As

Publication number Publication date
DE2808461A1 (de) 1978-09-07
US4147814A (en) 1979-04-03
JPS5645851B2 (ja) 1981-10-29
DK92178A (da) 1978-09-04
CA1098011A (en) 1981-03-24
DK153223C (da) 1988-11-07
DK153223B (da) 1988-06-27
DE2808461C2 (de) 1982-05-06

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