JPS53108029A - Method of making high purity silicon having uniform shape - Google Patents
Method of making high purity silicon having uniform shapeInfo
- Publication number
- JPS53108029A JPS53108029A JP2221277A JP2221277A JPS53108029A JP S53108029 A JPS53108029 A JP S53108029A JP 2221277 A JP2221277 A JP 2221277A JP 2221277 A JP2221277 A JP 2221277A JP S53108029 A JPS53108029 A JP S53108029A
- Authority
- JP
- Japan
- Prior art keywords
- high purity
- uniform shape
- purity silicon
- making high
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2221277A JPS53108029A (en) | 1977-03-03 | 1977-03-03 | Method of making high purity silicon having uniform shape |
DE2808461A DE2808461C2 (de) | 1977-03-03 | 1978-02-28 | Verfahren zur Herstellung von hochreinen Siliziumstäben mit gleichförmiger Querschnittsgestalt |
DK092178A DK153223C (da) | 1977-03-03 | 1978-03-01 | Fremgangsmaade og apparat til fremstilling af siliciumstave med ensartet tvaersnit |
CA298,321A CA1098011A (en) | 1977-03-03 | 1978-03-02 | Method of manufacturing high-purity silicon rods having a uniform sectional shape |
US05/882,819 US4147814A (en) | 1977-03-03 | 1978-03-02 | Method of manufacturing high-purity silicon rods having a uniform sectional shape |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2221277A JPS53108029A (en) | 1977-03-03 | 1977-03-03 | Method of making high purity silicon having uniform shape |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53108029A true JPS53108029A (en) | 1978-09-20 |
JPS5645851B2 JPS5645851B2 (ja) | 1981-10-29 |
Family
ID=12076485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2221277A Granted JPS53108029A (en) | 1977-03-03 | 1977-03-03 | Method of making high purity silicon having uniform shape |
Country Status (5)
Country | Link |
---|---|
US (1) | US4147814A (ja) |
JP (1) | JPS53108029A (ja) |
CA (1) | CA1098011A (ja) |
DE (1) | DE2808461C2 (ja) |
DK (1) | DK153223C (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016510305A (ja) * | 2013-03-18 | 2016-04-07 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | 多結晶シリコンの堆積法 |
WO2016103608A1 (ja) * | 2014-12-25 | 2016-06-30 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、fz単結晶シリコンの製造方法 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4259278A (en) * | 1979-07-09 | 1981-03-31 | Ultra Carbon Corporation | Method of reshaping warped graphite enclosures and the like |
US4309241A (en) * | 1980-07-28 | 1982-01-05 | Monsanto Company | Gas curtain continuous chemical vapor deposition production of semiconductor bodies |
US4464222A (en) * | 1980-07-28 | 1984-08-07 | Monsanto Company | Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases |
US4559219A (en) * | 1984-04-02 | 1985-12-17 | General Electric Company | Reducing powder formation in the production of high-purity silicon |
FR2572312B1 (fr) * | 1984-10-30 | 1989-01-20 | Rhone Poulenc Spec Chim | Procede de fabrication de barreaux de silicium ultra-pur |
US4724160A (en) * | 1986-07-28 | 1988-02-09 | Dow Corning Corporation | Process for the production of semiconductor materials |
US4826668A (en) * | 1987-06-11 | 1989-05-02 | Union Carbide Corporation | Process for the production of ultra high purity polycrystalline silicon |
US4805556A (en) * | 1988-01-15 | 1989-02-21 | Union Carbide Corporation | Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane |
IT1246772B (it) * | 1989-12-26 | 1994-11-26 | Advanced Silicon Materials Inc | ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno'' |
US5478396A (en) * | 1992-09-28 | 1995-12-26 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
US5382419A (en) * | 1992-09-28 | 1995-01-17 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
US5894887A (en) * | 1995-11-30 | 1999-04-20 | Applied Materials, Inc. | Ceramic dome temperature control using heat pipe structure and method |
DE19608885B4 (de) * | 1996-03-07 | 2006-11-16 | Wacker Chemie Ag | Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern |
US6544333B2 (en) | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
WO1999031013A1 (en) * | 1997-12-15 | 1999-06-24 | Advanced Silicon Materials, Inc. | Chemical vapor deposition system for polycrystalline silicon rod production |
US6623801B2 (en) | 2001-07-30 | 2003-09-23 | Komatsu Ltd. | Method of producing high-purity polycrystalline silicon |
US6503563B1 (en) * | 2001-10-09 | 2003-01-07 | Komatsu Ltd. | Method of producing polycrystalline silicon for semiconductors from saline gas |
CN100423856C (zh) * | 2003-08-20 | 2008-10-08 | 中国第一汽车集团公司 | 一种提高内花键尼龙润滑涂层粘结强度的方法 |
CN100387362C (zh) * | 2006-06-28 | 2008-05-14 | 蔡国华 | 用聚醚醚酮粉末喷涂金属制品表面的方法 |
JP5119856B2 (ja) * | 2006-11-29 | 2013-01-16 | 三菱マテリアル株式会社 | トリクロロシラン製造装置 |
RU2499081C2 (ru) * | 2008-03-26 | 2013-11-20 | ДжиТиЭйТи Корпорейшн | Системы и способы распределения газа в реакторе для химического осаждения из паровой фазы |
RU2503905C2 (ru) * | 2008-04-14 | 2014-01-10 | Хемлок Семикондактор Корпорейшн | Производственная установка для осаждения материала и электрод для использования в ней |
JP5959198B2 (ja) * | 2008-04-14 | 2016-08-02 | ヘムロック・セミコンダクター・コーポレーション | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
AU2009236678B2 (en) * | 2008-04-14 | 2014-02-27 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material on an electrode for use therein |
CN101476153B (zh) * | 2008-12-25 | 2011-12-07 | 青岛科技大学 | 多晶硅的还原生产工艺及其生产用还原炉 |
DE102009003368B3 (de) * | 2009-01-22 | 2010-03-25 | G+R Polysilicon Gmbh | Reaktor zur Herstellung von polykristallinem Silizium nach dem Monosilan-Prozess |
RU2011139137A (ru) * | 2009-02-27 | 2013-04-10 | Токуяма Корпорейшн | Стержень поликристаллического кремния и устройство для его получения |
US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
KR101708058B1 (ko) * | 2009-07-15 | 2017-02-17 | 미쓰비시 마테리알 가부시키가이샤 | 다결정 실리콘의 제조 방법, 다결정 실리콘의 제조 장치, 및 다결정 실리콘 |
JP2013522472A (ja) * | 2010-03-19 | 2013-06-13 | ジーティーエイティー・コーポレーション | 多結晶シリコン堆積のためのシステム及び方法 |
US10494714B2 (en) | 2011-01-03 | 2019-12-03 | Oci Company Ltd. | Chuck for chemical vapor deposition systems and related methods therefor |
DE102011080866A1 (de) | 2011-08-12 | 2013-02-14 | Wacker Chemie Ag | Verfahren zur Herstellung eines einkristallinen Stabes aus Silicium |
DE102015209008A1 (de) * | 2015-05-15 | 2016-11-17 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Zersetzung von Monosilan |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1061593B (de) * | 1956-06-25 | 1959-07-16 | Siemens Ag | Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke |
US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
NL251143A (ja) * | 1959-05-04 | |||
NL256017A (ja) * | 1959-09-23 | 1900-01-01 | ||
NL256255A (ja) * | 1959-11-02 | |||
US3941906A (en) * | 1973-03-01 | 1976-03-02 | Theodore Bostroem | Hot dip metallizing process |
-
1977
- 1977-03-03 JP JP2221277A patent/JPS53108029A/ja active Granted
-
1978
- 1978-02-28 DE DE2808461A patent/DE2808461C2/de not_active Expired
- 1978-03-01 DK DK092178A patent/DK153223C/da not_active IP Right Cessation
- 1978-03-02 US US05/882,819 patent/US4147814A/en not_active Expired - Lifetime
- 1978-03-02 CA CA298,321A patent/CA1098011A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016510305A (ja) * | 2013-03-18 | 2016-04-07 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | 多結晶シリコンの堆積法 |
WO2016103608A1 (ja) * | 2014-12-25 | 2016-06-30 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、fz単結晶シリコンの製造方法 |
JP2016121052A (ja) * | 2014-12-25 | 2016-07-07 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、fz単結晶シリコンの製造方法 |
US10800659B2 (en) | 2014-12-25 | 2020-10-13 | Shin-Etsu Chemical Co., Ltd. | Polycrystalline silicon rod, processing method for polycrystalline silicon rod, method for evaluating polycrystalline silicon rod, and method for producing FZ single crystal silicon |
US11167994B2 (en) | 2014-12-25 | 2021-11-09 | Shin-Etsu Chemical Co., Ltd. | Polycrystalline silicon rod, processing method for polycrystalline silicon rod, method for evaluating polycrystalline silicon rod, and method for producing FZ single crystal silicon |
Also Published As
Publication number | Publication date |
---|---|
DE2808461C2 (de) | 1982-05-06 |
DE2808461A1 (de) | 1978-09-07 |
JPS5645851B2 (ja) | 1981-10-29 |
DK92178A (da) | 1978-09-04 |
CA1098011A (en) | 1981-03-24 |
DK153223C (da) | 1988-11-07 |
US4147814A (en) | 1979-04-03 |
DK153223B (da) | 1988-06-27 |
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