DK153223C - Fremgangsmaade og apparat til fremstilling af siliciumstave med ensartet tvaersnit - Google Patents

Fremgangsmaade og apparat til fremstilling af siliciumstave med ensartet tvaersnit

Info

Publication number
DK153223C
DK153223C DK092178A DK92178A DK153223C DK 153223 C DK153223 C DK 153223C DK 092178 A DK092178 A DK 092178A DK 92178 A DK92178 A DK 92178A DK 153223 C DK153223 C DK 153223C
Authority
DK
Denmark
Prior art keywords
section
uniform cross
manufacturing silicon
silicon rods
rods
Prior art date
Application number
DK092178A
Other languages
English (en)
Other versions
DK153223B (da
DK92178A (da
Inventor
Yoshifumi Yatsurugi
Atsushi Yusa
Nagao Takahashi
Original Assignee
Komatsu Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Mfg Co Ltd filed Critical Komatsu Mfg Co Ltd
Publication of DK92178A publication Critical patent/DK92178A/da
Publication of DK153223B publication Critical patent/DK153223B/da
Application granted granted Critical
Publication of DK153223C publication Critical patent/DK153223C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DK092178A 1977-03-03 1978-03-01 Fremgangsmaade og apparat til fremstilling af siliciumstave med ensartet tvaersnit DK153223C (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2221277 1977-03-03
JP2221277A JPS53108029A (en) 1977-03-03 1977-03-03 Method of making high purity silicon having uniform shape

Publications (3)

Publication Number Publication Date
DK92178A DK92178A (da) 1978-09-04
DK153223B DK153223B (da) 1988-06-27
DK153223C true DK153223C (da) 1988-11-07

Family

ID=12076485

Family Applications (1)

Application Number Title Priority Date Filing Date
DK092178A DK153223C (da) 1977-03-03 1978-03-01 Fremgangsmaade og apparat til fremstilling af siliciumstave med ensartet tvaersnit

Country Status (5)

Country Link
US (1) US4147814A (da)
JP (1) JPS53108029A (da)
CA (1) CA1098011A (da)
DE (1) DE2808461C2 (da)
DK (1) DK153223C (da)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259278A (en) * 1979-07-09 1981-03-31 Ultra Carbon Corporation Method of reshaping warped graphite enclosures and the like
US4309241A (en) * 1980-07-28 1982-01-05 Monsanto Company Gas curtain continuous chemical vapor deposition production of semiconductor bodies
US4464222A (en) * 1980-07-28 1984-08-07 Monsanto Company Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases
US4559219A (en) * 1984-04-02 1985-12-17 General Electric Company Reducing powder formation in the production of high-purity silicon
FR2572312B1 (fr) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4724160A (en) * 1986-07-28 1988-02-09 Dow Corning Corporation Process for the production of semiconductor materials
US4826668A (en) * 1987-06-11 1989-05-02 Union Carbide Corporation Process for the production of ultra high purity polycrystalline silicon
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
KR950013069B1 (ko) * 1989-12-26 1995-10-24 어드밴스드 실리콘 머티어리얼즈 인코포레이티드 수소 침투 방지용 외부 코팅층을 갖는 흑연 척 및 탄소가 거의 없는 다결정 실리콘 제조 방법
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5894887A (en) * 1995-11-30 1999-04-20 Applied Materials, Inc. Ceramic dome temperature control using heat pipe structure and method
DE19608885B4 (de) * 1996-03-07 2006-11-16 Wacker Chemie Ag Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern
US6544333B2 (en) * 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
DE19882883B4 (de) 1997-12-15 2009-02-26 Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen
US6623801B2 (en) 2001-07-30 2003-09-23 Komatsu Ltd. Method of producing high-purity polycrystalline silicon
US6503563B1 (en) * 2001-10-09 2003-01-07 Komatsu Ltd. Method of producing polycrystalline silicon for semiconductors from saline gas
CN100423856C (zh) * 2003-08-20 2008-10-08 中国第一汽车集团公司 一种提高内花键尼龙润滑涂层粘结强度的方法
CN100387362C (zh) * 2006-06-28 2008-05-14 蔡国华 用聚醚醚酮粉末喷涂金属制品表面的方法
JP5119856B2 (ja) * 2006-11-29 2013-01-16 三菱マテリアル株式会社 トリクロロシラン製造装置
EP2271788A2 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
US8784565B2 (en) * 2008-04-14 2014-07-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
AU2009236679B2 (en) * 2008-04-14 2014-02-27 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
RU2503905C2 (ru) * 2008-04-14 2014-01-10 Хемлок Семикондактор Корпорейшн Производственная установка для осаждения материала и электрод для использования в ней
CN101476153B (zh) * 2008-12-25 2011-12-07 青岛科技大学 多晶硅的还原生产工艺及其生产用还原炉
DE102009003368B3 (de) * 2009-01-22 2010-03-25 G+R Polysilicon Gmbh Reaktor zur Herstellung von polykristallinem Silizium nach dem Monosilan-Prozess
WO2010098319A1 (ja) * 2009-02-27 2010-09-02 株式会社トクヤマ 多結晶シリコンロッド及びその製造装置
JP5477145B2 (ja) * 2009-04-28 2014-04-23 三菱マテリアル株式会社 多結晶シリコン反応炉
US8507051B2 (en) * 2009-07-15 2013-08-13 Mitsubishi Materials Corporation Polycrystalline silicon producing method
EP2547624A4 (en) * 2010-03-19 2014-05-07 Gtat Corp SYSTEM AND METHOD FOR POLYCRYSTALLINE SILICON DEPOSITION
US10494714B2 (en) 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
DE102011080866A1 (de) 2011-08-12 2013-02-14 Wacker Chemie Ag Verfahren zur Herstellung eines einkristallinen Stabes aus Silicium
DE102013204730A1 (de) * 2013-03-18 2014-09-18 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
JP6345108B2 (ja) 2014-12-25 2018-06-20 信越化学工業株式会社 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、ｆｚ単結晶シリコンの製造方法
DE102015209008A1 (de) * 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Zersetzung von Monosilan

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
NL251143A (da) * 1959-05-04
NL256017A (da) * 1959-09-23 1900-01-01
NL256255A (da) * 1959-11-02
US3941906A (en) * 1973-03-01 1976-03-02 Theodore Bostroem Hot dip metallizing process

Also Published As

Publication number Publication date
DK153223B (da) 1988-06-27
DE2808461C2 (de) 1982-05-06
CA1098011A (en) 1981-03-24
US4147814A (en) 1979-04-03
DK92178A (da) 1978-09-04
JPS5645851B2 (da) 1981-10-29
DE2808461A1 (de) 1978-09-07
JPS53108029A (en) 1978-09-20

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