DK92078A - Fremgangsmaade og apparat til fremstilling af siliciumstave - Google Patents

Fremgangsmaade og apparat til fremstilling af siliciumstave

Info

Publication number
DK92078A
DK92078A DK92078A DK92078A DK92078A DK 92078 A DK92078 A DK 92078A DK 92078 A DK92078 A DK 92078A DK 92078 A DK92078 A DK 92078A DK 92078 A DK92078 A DK 92078A
Authority
DK
Denmark
Prior art keywords
manufacture
sticks
silicon
silicon sticks
Prior art date
Application number
DK92078A
Other languages
English (en)
Other versions
DK154028C (da
DK154028B (da
Inventor
Y Yatsurugi
A Yusa
N Takahashi
Original Assignee
Komatsu Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Mfg Co Ltd filed Critical Komatsu Mfg Co Ltd
Publication of DK92078A publication Critical patent/DK92078A/da
Publication of DK154028B publication Critical patent/DK154028B/da
Application granted granted Critical
Publication of DK154028C publication Critical patent/DK154028C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DK092078A 1977-03-02 1978-03-01 Apparat til fremstilling af siliciumstave DK154028C (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2147377 1977-03-02
JP2147377A JPS53106626A (en) 1977-03-02 1977-03-02 Method of making high purity rod silicon and appratus therefor

Publications (3)

Publication Number Publication Date
DK92078A true DK92078A (da) 1978-09-03
DK154028B DK154028B (da) 1988-10-03
DK154028C DK154028C (da) 1989-02-13

Family

ID=12055935

Family Applications (1)

Application Number Title Priority Date Filing Date
DK092078A DK154028C (da) 1977-03-02 1978-03-01 Apparat til fremstilling af siliciumstave

Country Status (5)

Country Link
US (1) US4150168A (da)
JP (1) JPS53106626A (da)
CA (1) CA1083728A (da)
DE (1) DE2808462C2 (da)
DK (1) DK154028C (da)

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DE2912661C2 (de) * 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
US4681652A (en) * 1980-06-05 1987-07-21 Rogers Leo C Manufacture of polycrystalline silicon
US4559219A (en) * 1984-04-02 1985-12-17 General Electric Company Reducing powder formation in the production of high-purity silicon
FR2572312B1 (fr) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4724160A (en) * 1986-07-28 1988-02-09 Dow Corning Corporation Process for the production of semiconductor materials
US4826668A (en) * 1987-06-11 1989-05-02 Union Carbide Corporation Process for the production of ultra high purity polycrystalline silicon
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
US4921026A (en) * 1988-06-01 1990-05-01 Union Carbide Chemicals And Plastics Company Inc. Polycrystalline silicon capable of yielding long lifetime single crystalline silicon
US5177399A (en) * 1988-06-27 1993-01-05 Kabushiki Kaisha Toshiba Color cathode ray tube apparatus
US5206559A (en) * 1989-08-04 1993-04-27 Kabushiki Kaisha Toshiba Cathode ray tube which improves deflection aberration
US5225245A (en) * 1989-12-01 1993-07-06 Kawasaki Steel Corporation Chemical vapor deposition method for forming thin film
WO1992000245A1 (en) * 1990-06-27 1992-01-09 Komatsu Electronic Metals Co., Ltd. Method of producing polycrystalline silicon rods for semiconductors and thermal decomposition furnace therefor
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
WO1999031013A1 (en) * 1997-12-15 1999-06-24 Advanced Silicon Materials, Inc. Chemical vapor deposition system for polycrystalline silicon rod production
US6544333B2 (en) 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
US5904981A (en) * 1998-05-27 1999-05-18 Tokuyama Corporation Polycrystal silicon rod having an improved morphyology
US6468886B2 (en) * 1999-06-15 2002-10-22 Midwest Research Institute Purification and deposition of silicon by an iodide disproportionation reaction
RU2155158C1 (ru) * 1999-10-07 2000-08-27 Институт химии высокочистых веществ РАН Способ получения моноизотопного кремния si28
KR100411180B1 (ko) 2001-01-03 2003-12-18 한국화학연구원 다결정실리콘의 제조방법과 그 장치
US7033561B2 (en) 2001-06-08 2006-04-25 Dow Corning Corporation Process for preparation of polycrystalline silicon
US6623801B2 (en) 2001-07-30 2003-09-23 Komatsu Ltd. Method of producing high-purity polycrystalline silicon
US6503563B1 (en) 2001-10-09 2003-01-07 Komatsu Ltd. Method of producing polycrystalline silicon for semiconductors from saline gas
EP1772429A4 (en) * 2004-06-22 2010-01-06 Shin Etsu Film Co Ltd METHOD FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON FOR A SOLAR CELL PRODUCED BY THE METHOD
JP5509578B2 (ja) * 2007-11-28 2014-06-04 三菱マテリアル株式会社 多結晶シリコン製造装置及び製造方法
KR20100139092A (ko) * 2008-03-26 2010-12-31 지티 솔라 인코퍼레이티드 금-코팅된 폴리실리콘 반응기 시스템 및 방법
RU2499081C2 (ru) * 2008-03-26 2013-11-20 ДжиТиЭйТи Корпорейшн Системы и способы распределения газа в реакторе для химического осаждения из паровой фазы
JP5481886B2 (ja) * 2008-03-27 2014-04-23 三菱マテリアル株式会社 多結晶シリコン製造装置
RU2503905C2 (ru) * 2008-04-14 2014-01-10 Хемлок Семикондактор Корпорейшн Производственная установка для осаждения материала и электрод для использования в ней
JP5959198B2 (ja) * 2008-04-14 2016-08-02 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
AU2009236678B2 (en) * 2008-04-14 2014-02-27 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material on an electrode for use therein
MY157446A (en) 2008-06-23 2016-06-15 Gt Solar Inc Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor
JP5444860B2 (ja) * 2008-06-24 2014-03-19 三菱マテリアル株式会社 多結晶シリコン製造装置
US8399072B2 (en) * 2009-04-24 2013-03-19 Savi Research, Inc. Process for improved chemcial vapor deposition of polysilicon
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
CN102471883A (zh) * 2009-07-14 2012-05-23 赫姆洛克半导体公司 抑制沉积物在制造系统中的形成的方法
KR101115697B1 (ko) * 2009-12-02 2012-03-06 웅진폴리실리콘주식회사 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기
KR101033162B1 (ko) 2010-01-14 2011-05-11 (주)세미머티리얼즈 폴리실리콘 증착장치
US20110206842A1 (en) * 2010-02-25 2011-08-25 Vithal Revankar CVD-Siemens Reactor Process Hydrogen Recycle System
JP5637013B2 (ja) * 2010-03-04 2014-12-10 三菱マテリアル株式会社 トリクロロシラン製造装置及び製造方法
CN102190304B (zh) * 2010-03-08 2015-04-15 三菱综合材料株式会社 三氯硅烷制造装置
CN102190305B (zh) * 2010-03-15 2014-10-29 三菱综合材料株式会社 三氯硅烷制造装置
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
RU2561081C2 (ru) 2011-03-30 2015-08-20 Виктор Григорьевич КОЛЕСНИК СПОСОБ ВОССТАНОВЛЕНИЯ ЖЕЛЕЗА, ВОССТАНОВЛЕНИЯ КРЕМНИЯ И ВОССТАНОВЛЕНИЯ ДИОКСИДА ТИТАНА ДО МЕТАЛЛИЧЕСКОГО ТИТАНА ПУТЁМ ГЕНЕРАЦИИ ЭЛЕКТРОМАГНИТНЫХ ВЗАИМОДЕЙСТВИЙ ЧАСТИЦ SiO2, КРЕМНИЙСОДЕРЖАЩЕГО ГАЗА, ЧАСТИЦ FeTiО3 И МАГНИТНЫХ ВОЛН
JP5874469B2 (ja) * 2012-03-19 2016-03-02 東京エレクトロン株式会社 トラップ装置及び成膜装置
US8871153B2 (en) 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods
DE102013204730A1 (de) * 2013-03-18 2014-09-18 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
US10208381B2 (en) 2014-12-23 2019-02-19 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
DE102015209008A1 (de) 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Zersetzung von Monosilan

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
NL124690C (da) * 1958-05-29
NL251143A (da) * 1959-05-04
NL256255A (da) * 1959-11-02

Also Published As

Publication number Publication date
DE2808462C2 (de) 1982-04-29
DE2808462A1 (de) 1978-09-07
DK154028C (da) 1989-02-13
US4150168A (en) 1979-04-17
DK154028B (da) 1988-10-03
JPS5645850B2 (da) 1981-10-29
JPS53106626A (en) 1978-09-16
CA1083728A (en) 1980-08-12

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