JPS53106626A - Method of making high purity rod silicon and appratus therefor - Google Patents

Method of making high purity rod silicon and appratus therefor

Info

Publication number
JPS53106626A
JPS53106626A JP2147377A JP2147377A JPS53106626A JP S53106626 A JPS53106626 A JP S53106626A JP 2147377 A JP2147377 A JP 2147377A JP 2147377 A JP2147377 A JP 2147377A JP S53106626 A JPS53106626 A JP S53106626A
Authority
JP
Japan
Prior art keywords
high purity
making high
rod silicon
appratus
therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2147377A
Other languages
English (en)
Other versions
JPS5645850B2 (ja
Inventor
Yoshifumi Yatsurugi
Atsushi Yusa
Nagao Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Priority to JP2147377A priority Critical patent/JPS53106626A/ja
Priority to DE2808462A priority patent/DE2808462C2/de
Priority to CA298,012A priority patent/CA1083728A/en
Priority to DK092078A priority patent/DK154028C/da
Priority to US05/882,817 priority patent/US4150168A/en
Publication of JPS53106626A publication Critical patent/JPS53106626A/ja
Publication of JPS5645850B2 publication Critical patent/JPS5645850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP2147377A 1977-03-02 1977-03-02 Method of making high purity rod silicon and appratus therefor Granted JPS53106626A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2147377A JPS53106626A (en) 1977-03-02 1977-03-02 Method of making high purity rod silicon and appratus therefor
DE2808462A DE2808462C2 (de) 1977-03-02 1978-02-28 Vorrichtung zur Herstellung von hochreinen Siliziumstäben
CA298,012A CA1083728A (en) 1977-03-02 1978-03-01 Method and apparatus for manufacturing high-purity silicon rods
DK092078A DK154028C (da) 1977-03-02 1978-03-01 Apparat til fremstilling af siliciumstave
US05/882,817 US4150168A (en) 1977-03-02 1978-03-02 Method and apparatus for manufacturing high-purity silicon rods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2147377A JPS53106626A (en) 1977-03-02 1977-03-02 Method of making high purity rod silicon and appratus therefor

Publications (2)

Publication Number Publication Date
JPS53106626A true JPS53106626A (en) 1978-09-16
JPS5645850B2 JPS5645850B2 (ja) 1981-10-29

Family

ID=12055935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2147377A Granted JPS53106626A (en) 1977-03-02 1977-03-02 Method of making high purity rod silicon and appratus therefor

Country Status (5)

Country Link
US (1) US4150168A (ja)
JP (1) JPS53106626A (ja)
CA (1) CA1083728A (ja)
DE (1) DE2808462C2 (ja)
DK (1) DK154028C (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177399A (en) * 1988-06-27 1993-01-05 Kabushiki Kaisha Toshiba Color cathode ray tube apparatus
US5206559A (en) * 1989-08-04 1993-04-27 Kabushiki Kaisha Toshiba Cathode ray tube which improves deflection aberration
JP2009256188A (ja) * 2008-03-27 2009-11-05 Mitsubishi Materials Corp 多結晶シリコン製造装置
JP2010030878A (ja) * 2008-06-24 2010-02-12 Mitsubishi Materials Corp 多結晶シリコン製造装置
JP2011517734A (ja) * 2008-04-14 2011-06-16 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
JP2011522959A (ja) * 2008-04-14 2011-08-04 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
JP2011201767A (ja) * 2010-03-04 2011-10-13 Mitsubishi Materials Corp トリクロロシラン製造装置及び製造方法
JP2011207746A (ja) * 2010-03-08 2011-10-20 Mitsubishi Materials Corp トリクロロシラン製造装置
JP2015028217A (ja) * 2008-04-14 2015-02-12 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
JP2016510305A (ja) * 2013-03-18 2016-04-07 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 多結晶シリコンの堆積法

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2912661C2 (de) * 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
US4681652A (en) * 1980-06-05 1987-07-21 Rogers Leo C Manufacture of polycrystalline silicon
US4559219A (en) * 1984-04-02 1985-12-17 General Electric Company Reducing powder formation in the production of high-purity silicon
FR2572312B1 (fr) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4724160A (en) * 1986-07-28 1988-02-09 Dow Corning Corporation Process for the production of semiconductor materials
US4826668A (en) * 1987-06-11 1989-05-02 Union Carbide Corporation Process for the production of ultra high purity polycrystalline silicon
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
US4921026A (en) * 1988-06-01 1990-05-01 Union Carbide Chemicals And Plastics Company Inc. Polycrystalline silicon capable of yielding long lifetime single crystalline silicon
US5225245A (en) * 1989-12-01 1993-07-06 Kawasaki Steel Corporation Chemical vapor deposition method for forming thin film
DE69027048T2 (de) * 1990-06-27 1997-01-02 Komatsu Denshi Kinzoku Kk Verfahren zur herstellung von polykristallinen siliziumstäben für halbleiter sowie dafür geeigneter ofen zur thermischen zersetzung
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
JP4812938B2 (ja) * 1997-12-15 2011-11-09 レック シリコン インコーポレイテッド 多結晶シリコン棒製造用化学的蒸気析着方式
US6544333B2 (en) * 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
US5904981A (en) * 1998-05-27 1999-05-18 Tokuyama Corporation Polycrystal silicon rod having an improved morphyology
US6468886B2 (en) * 1999-06-15 2002-10-22 Midwest Research Institute Purification and deposition of silicon by an iodide disproportionation reaction
RU2155158C1 (ru) * 1999-10-07 2000-08-27 Институт химии высокочистых веществ РАН Способ получения моноизотопного кремния si28
KR100411180B1 (ko) 2001-01-03 2003-12-18 한국화학연구원 다결정실리콘의 제조방법과 그 장치
US7033561B2 (en) 2001-06-08 2006-04-25 Dow Corning Corporation Process for preparation of polycrystalline silicon
US6623801B2 (en) 2001-07-30 2003-09-23 Komatsu Ltd. Method of producing high-purity polycrystalline silicon
US6503563B1 (en) 2001-10-09 2003-01-07 Komatsu Ltd. Method of producing polycrystalline silicon for semiconductors from saline gas
US7732012B2 (en) * 2004-06-22 2010-06-08 Shin-Etsu Film Co., Ltd Method for manufacturing polycrystalline silicon, and polycrystalline silicon for solar cells manufactured by the method
JP5509578B2 (ja) * 2007-11-28 2014-06-04 三菱マテリアル株式会社 多結晶シリコン製造装置及び製造方法
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
US8961689B2 (en) * 2008-03-26 2015-02-24 Gtat Corporation Systems and methods for distributing gas in a chemical vapor deposition reactor
MY157446A (en) 2008-06-23 2016-06-15 Gt Solar Inc Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor
US8399072B2 (en) * 2009-04-24 2013-03-19 Savi Research, Inc. Process for improved chemcial vapor deposition of polysilicon
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
US20120114860A1 (en) * 2009-07-14 2012-05-10 Max Dehtiar Method of inhibiting formation of deposits in a manufacturing system
KR101115697B1 (ko) * 2009-12-02 2012-03-06 웅진폴리실리콘주식회사 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기
KR101033162B1 (ko) 2010-01-14 2011-05-11 (주)세미머티리얼즈 폴리실리콘 증착장치
US20110206842A1 (en) * 2010-02-25 2011-08-25 Vithal Revankar CVD-Siemens Reactor Process Hydrogen Recycle System
CN102190305B (zh) * 2010-03-15 2014-10-29 三菱综合材料株式会社 三氯硅烷制造装置
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
WO2012135872A1 (ru) 2011-03-30 2012-10-04 Kolesnik Viktor Grigorjevich Способ восстановления кремния и титана путем генерации электромагнитных взаимодействий частиц sio2, fetio3 и магнитных волн
JP5874469B2 (ja) * 2012-03-19 2016-03-02 東京エレクトロン株式会社 トラップ装置及び成膜装置
US8871153B2 (en) 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
US10208381B2 (en) 2014-12-23 2019-02-19 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
DE102015209008A1 (de) * 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Zersetzung von Monosilan

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
NL124690C (ja) * 1958-05-29
NL251143A (ja) * 1959-05-04
NL256255A (ja) * 1959-11-02

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177399A (en) * 1988-06-27 1993-01-05 Kabushiki Kaisha Toshiba Color cathode ray tube apparatus
US5206559A (en) * 1989-08-04 1993-04-27 Kabushiki Kaisha Toshiba Cathode ray tube which improves deflection aberration
JP2009256188A (ja) * 2008-03-27 2009-11-05 Mitsubishi Materials Corp 多結晶シリコン製造装置
JP2011517734A (ja) * 2008-04-14 2011-06-16 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
JP2011522959A (ja) * 2008-04-14 2011-08-04 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
JP2015028217A (ja) * 2008-04-14 2015-02-12 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
JP2010030878A (ja) * 2008-06-24 2010-02-12 Mitsubishi Materials Corp 多結晶シリコン製造装置
JP2011201767A (ja) * 2010-03-04 2011-10-13 Mitsubishi Materials Corp トリクロロシラン製造装置及び製造方法
US8809746B2 (en) 2010-03-04 2014-08-19 Mitsubishi Materials Corporation Apparatus for producing trichlorosilane and method for producing trichlorosilane
JP2011207746A (ja) * 2010-03-08 2011-10-20 Mitsubishi Materials Corp トリクロロシラン製造装置
JP2016510305A (ja) * 2013-03-18 2016-04-07 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 多結晶シリコンの堆積法

Also Published As

Publication number Publication date
DK154028C (da) 1989-02-13
CA1083728A (en) 1980-08-12
US4150168A (en) 1979-04-17
DK92078A (da) 1978-09-03
JPS5645850B2 (ja) 1981-10-29
DK154028B (da) 1988-10-03
DE2808462A1 (de) 1978-09-07
DE2808462C2 (de) 1982-04-29

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