NL256255A - - Google Patents

Info

Publication number
NL256255A
NL256255A NL256255DA NL256255A NL 256255 A NL256255 A NL 256255A NL 256255D A NL256255D A NL 256255DA NL 256255 A NL256255 A NL 256255A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL256255A publication Critical patent/NL256255A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL256255D 1959-11-02 NL256255A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES65680A DE1212948B (de) 1959-11-02 1959-11-02 Verfahren zum Herstellen von reinen Siliciumstaeben

Publications (1)

Publication Number Publication Date
NL256255A true NL256255A (ja)

Family

ID=7498226

Family Applications (1)

Application Number Title Priority Date Filing Date
NL256255D NL256255A (ja) 1959-11-02

Country Status (6)

Country Link
US (1) US3053638A (ja)
BE (1) BE596545R (ja)
CH (1) CH478594A (ja)
DE (1) DE1212948B (ja)
NL (1) NL256255A (ja)
SE (1) SE304749B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL295321A (ja) * 1958-12-09
DE1223804B (de) * 1961-01-26 1966-09-01 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium
DE1137807B (de) * 1961-06-09 1962-10-11 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
DE1262244B (de) * 1964-12-23 1968-03-07 Siemens Ag Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
DE1297086B (de) * 1965-01-29 1969-06-12 Siemens Ag Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
US3610202A (en) * 1969-05-23 1971-10-05 Siemens Ag Epitactic apparatus
BE806098A (fr) * 1973-03-28 1974-02-01 Siemens Ag Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure
DE2315469C3 (de) * 1973-03-28 1981-08-20 Siemens AG, 1000 Berlin und 8000 München Verfahren und Vorrichtung zum Herstellen von hochreinem Halbleitermaterial
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
JPS53108029A (en) * 1977-03-03 1978-09-20 Komatsu Mfg Co Ltd Method of making high purity silicon having uniform shape
DE2753567C3 (de) * 1977-12-01 1982-04-15 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von hochreinen Halbleitermaterialien und Reinstmetallen
US4292344A (en) * 1979-02-23 1981-09-29 Union Carbide Corporation Fluidized bed heating process and apparatus
DE2928456C2 (de) * 1979-07-13 1983-07-07 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von hochreinem Silicium
US4681652A (en) * 1980-06-05 1987-07-21 Rogers Leo C Manufacture of polycrystalline silicon
US5798137A (en) * 1995-06-07 1998-08-25 Advanced Silicon Materials, Inc. Method for silicon deposition
JP5119856B2 (ja) * 2006-11-29 2013-01-16 三菱マテリアル株式会社 トリクロロシラン製造装置
WO2010066479A1 (de) * 2008-12-09 2010-06-17 Centrotherm Sitec Gmbh Verfahren zur stromversorgung eines cvd-prozesses bei der siliziumabscheidung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
NL130620C (ja) * 1954-05-18 1900-01-01

Also Published As

Publication number Publication date
SE304749B (ja) 1968-10-07
DE1212948B (de) 1966-03-24
CH478594A (de) 1969-09-30
BE596545R (fr) 1961-02-15
US3053638A (en) 1962-09-11

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