JPS53104156A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53104156A
JPS53104156A JP1819277A JP1819277A JPS53104156A JP S53104156 A JPS53104156 A JP S53104156A JP 1819277 A JP1819277 A JP 1819277A JP 1819277 A JP1819277 A JP 1819277A JP S53104156 A JPS53104156 A JP S53104156A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
sunk
polarity
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1819277A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62570B2 (cs
Inventor
Masanobu Miyao
Naoji Yoshihiro
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1819277A priority Critical patent/JPS53104156A/ja
Publication of JPS53104156A publication Critical patent/JPS53104156A/ja
Publication of JPS62570B2 publication Critical patent/JPS62570B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP1819277A 1977-02-23 1977-02-23 Manufacture for semiconductor device Granted JPS53104156A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1819277A JPS53104156A (en) 1977-02-23 1977-02-23 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1819277A JPS53104156A (en) 1977-02-23 1977-02-23 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS53104156A true JPS53104156A (en) 1978-09-11
JPS62570B2 JPS62570B2 (cs) 1987-01-08

Family

ID=11964751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1819277A Granted JPS53104156A (en) 1977-02-23 1977-02-23 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53104156A (cs)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118648A (en) * 1981-01-16 1982-07-23 Matsushita Electronics Corp Manufacture of semiconductor device
JPS59213135A (ja) * 1983-05-19 1984-12-03 Agency Of Ind Science & Technol 半導体の微細加工方法
US4968635A (en) * 1987-09-18 1990-11-06 Kabushiki Kasiha Toshiba Method of forming emitter of a bipolar transistor in monocrystallized film
US5374564A (en) * 1991-09-18 1994-12-20 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
US6225192B1 (en) 1996-05-15 2001-05-01 Commissariat A L'energie Atomique Method of producing a thin layer of semiconductor material
US6790747B2 (en) 1997-05-12 2004-09-14 Silicon Genesis Corporation Method and device for controlled cleaving process
US6890838B2 (en) 1997-07-18 2005-05-10 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US7056808B2 (en) 1999-08-10 2006-06-06 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US7713369B2 (en) 2001-04-13 2010-05-11 Commissariat A L'energie Atomique Detachable substrate or detachable structure and method for the production thereof
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
JP2014143277A (ja) * 2013-01-23 2014-08-07 Toyota Motor Corp 半導体装置
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118648A (en) * 1981-01-16 1982-07-23 Matsushita Electronics Corp Manufacture of semiconductor device
JPS59213135A (ja) * 1983-05-19 1984-12-03 Agency Of Ind Science & Technol 半導体の微細加工方法
US4968635A (en) * 1987-09-18 1990-11-06 Kabushiki Kasiha Toshiba Method of forming emitter of a bipolar transistor in monocrystallized film
US5374564A (en) * 1991-09-18 1994-12-20 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
USRE39484E1 (en) * 1991-09-18 2007-02-06 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
US7067396B2 (en) 1996-05-15 2006-06-27 Commissariat A L'energie Atomique Method of producing a thin layer of semiconductor material
US6225192B1 (en) 1996-05-15 2001-05-01 Commissariat A L'energie Atomique Method of producing a thin layer of semiconductor material
US6809009B2 (en) 1996-05-15 2004-10-26 Commissariat A L'energie Atomique Method of producing a thin layer of semiconductor material
US7498234B2 (en) 1996-05-15 2009-03-03 Commissariat A L'energie Atomique Method of producing a thin layer of semiconductor material
US6790747B2 (en) 1997-05-12 2004-09-14 Silicon Genesis Corporation Method and device for controlled cleaving process
US6890838B2 (en) 1997-07-18 2005-05-10 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US7056808B2 (en) 1999-08-10 2006-06-06 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US7713369B2 (en) 2001-04-13 2010-05-11 Commissariat A L'energie Atomique Detachable substrate or detachable structure and method for the production thereof
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9356181B2 (en) 2006-09-08 2016-05-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9640711B2 (en) 2006-09-08 2017-05-02 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US11444221B2 (en) 2008-05-07 2022-09-13 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
US8389385B2 (en) 2009-02-04 2013-03-05 Micron Technology, Inc. Semiconductor material manufacture
JP2014143277A (ja) * 2013-01-23 2014-08-07 Toyota Motor Corp 半導体装置

Also Published As

Publication number Publication date
JPS62570B2 (cs) 1987-01-08

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