JPS5289478A - Mos integrated circuit - Google Patents

Mos integrated circuit

Info

Publication number
JPS5289478A
JPS5289478A JP548076A JP548076A JPS5289478A JP S5289478 A JPS5289478 A JP S5289478A JP 548076 A JP548076 A JP 548076A JP 548076 A JP548076 A JP 548076A JP S5289478 A JPS5289478 A JP S5289478A
Authority
JP
Japan
Prior art keywords
integrated circuit
mos integrated
membrane
ground potential
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP548076A
Other languages
English (en)
Other versions
JPS5510149B2 (ja
Inventor
Hiroyuki Tango
Yoshio Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP548076A priority Critical patent/JPS5289478A/ja
Publication of JPS5289478A publication Critical patent/JPS5289478A/ja
Publication of JPS5510149B2 publication Critical patent/JPS5510149B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP548076A 1976-01-22 1976-01-22 Mos integrated circuit Granted JPS5289478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP548076A JPS5289478A (en) 1976-01-22 1976-01-22 Mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP548076A JPS5289478A (en) 1976-01-22 1976-01-22 Mos integrated circuit

Publications (2)

Publication Number Publication Date
JPS5289478A true JPS5289478A (en) 1977-07-27
JPS5510149B2 JPS5510149B2 (ja) 1980-03-14

Family

ID=11612399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP548076A Granted JPS5289478A (en) 1976-01-22 1976-01-22 Mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5289478A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561055A (en) * 1978-10-31 1980-05-08 Nec Corp Semiconductor device
JPS5651874A (en) * 1979-10-05 1981-05-09 Nec Corp Semiconductor device
JPS57111065A (en) * 1980-12-27 1982-07-10 Seiko Epson Corp Mos field effect type semiconductor circuit device
JPS61225852A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561055A (en) * 1978-10-31 1980-05-08 Nec Corp Semiconductor device
JPS6237811B2 (ja) * 1978-10-31 1987-08-14 Nippon Electric Co
JPS5651874A (en) * 1979-10-05 1981-05-09 Nec Corp Semiconductor device
JPS57111065A (en) * 1980-12-27 1982-07-10 Seiko Epson Corp Mos field effect type semiconductor circuit device
JPS61225852A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS5510149B2 (ja) 1980-03-14

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