JPS5267961A - Electrode formation of semiconductor unit - Google Patents

Electrode formation of semiconductor unit

Info

Publication number
JPS5267961A
JPS5267961A JP50144169A JP14416975A JPS5267961A JP S5267961 A JPS5267961 A JP S5267961A JP 50144169 A JP50144169 A JP 50144169A JP 14416975 A JP14416975 A JP 14416975A JP S5267961 A JPS5267961 A JP S5267961A
Authority
JP
Japan
Prior art keywords
electrode formation
semiconductor unit
well
thermal stability
liquid containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50144169A
Other languages
English (en)
Inventor
Aiichiro Nara
Hisao Kondo
Takeji Fujiwara
Hideaki Ikegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50144169A priority Critical patent/JPS5267961A/ja
Priority to DE2654476A priority patent/DE2654476C3/de
Priority to SE7613531A priority patent/SE7613531L/
Publication of JPS5267961A publication Critical patent/JPS5267961A/ja
Priority to US05/919,308 priority patent/US4224115A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP50144169A 1975-12-03 1975-12-03 Electrode formation of semiconductor unit Pending JPS5267961A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50144169A JPS5267961A (en) 1975-12-03 1975-12-03 Electrode formation of semiconductor unit
DE2654476A DE2654476C3 (de) 1975-12-03 1976-12-01 Verfahren zur Herstellung einer Schottky-Sperrschicht
SE7613531A SE7613531L (sv) 1975-12-03 1976-12-02 Sett att framstella en elektrod for halvledaranordning
US05/919,308 US4224115A (en) 1975-12-03 1978-06-26 Process for forming electrode on semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50144169A JPS5267961A (en) 1975-12-03 1975-12-03 Electrode formation of semiconductor unit

Publications (1)

Publication Number Publication Date
JPS5267961A true JPS5267961A (en) 1977-06-06

Family

ID=15355793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50144169A Pending JPS5267961A (en) 1975-12-03 1975-12-03 Electrode formation of semiconductor unit

Country Status (4)

Country Link
US (1) US4224115A (ja)
JP (1) JPS5267961A (ja)
DE (1) DE2654476C3 (ja)
SE (1) SE7613531L (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
US4350994A (en) * 1979-10-04 1982-09-21 Wisconsin Alumni Research Foundation Semiconductor device having an amorphous metal layer contact
JP3403263B2 (ja) * 1994-11-14 2003-05-06 臼井国際産業株式会社 加工性・耐食性の均一性に優れた耐熱・耐食性めっき鋼材
JP3223829B2 (ja) * 1997-01-29 2001-10-29 新光電気工業株式会社 電気ニッケルめっき浴又は電気ニッケル合金めっき浴及びそれを用いためっき方法
US7262434B2 (en) 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US7749877B2 (en) * 2006-03-07 2010-07-06 Siliconix Technology C. V. Process for forming Schottky rectifier with PtNi silicide Schottky barrier
US7701031B2 (en) * 2006-04-07 2010-04-20 United Microelectronics Corp. Integrated circuit structure and manufacturing method thereof
CN101348928B (zh) * 2007-07-20 2012-07-04 罗门哈斯电子材料有限公司 镀钯及镀钯合金之高速方法
US20110147225A1 (en) 2007-07-20 2011-06-23 Rohm And Haas Electronic Materials Llc High speed method for plating palladium and palladium alloys
CN105244317B (zh) * 2014-07-09 2018-11-20 中芯国际集成电路制造(上海)有限公司 一种硅化镍后形成工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5086981A (ja) * 1973-12-01 1975-07-12

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1098182A (en) * 1963-12-27 1968-01-10 Ibm Electrolyte or electroless plating process
JPS4733176B1 (ja) * 1967-01-11 1972-08-23
GB1207093A (en) * 1968-04-05 1970-09-30 Matsushita Electronics Corp Improvements in or relating to schottky barrier semiconductor devices
FR2058385A1 (en) * 1969-08-20 1971-05-28 Ibm Diode with schottky barrier
US3699408A (en) * 1970-01-23 1972-10-17 Nippon Electric Co Gallium-arsenide schottky barrier type semiconductor device
JPS4733178U (ja) * 1971-05-14 1972-12-13
US3932880A (en) * 1974-11-26 1976-01-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with Schottky barrier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5086981A (ja) * 1973-12-01 1975-07-12

Also Published As

Publication number Publication date
DE2654476A1 (de) 1977-06-23
DE2654476C3 (de) 1982-02-18
DE2654476B2 (de) 1978-11-09
US4224115A (en) 1980-09-23
SE7613531L (sv) 1977-06-04

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