SE7613531L - Sett att framstella en elektrod for halvledaranordning - Google Patents

Sett att framstella en elektrod for halvledaranordning

Info

Publication number
SE7613531L
SE7613531L SE7613531A SE7613531A SE7613531L SE 7613531 L SE7613531 L SE 7613531L SE 7613531 A SE7613531 A SE 7613531A SE 7613531 A SE7613531 A SE 7613531A SE 7613531 L SE7613531 L SE 7613531L
Authority
SE
Sweden
Prior art keywords
electrode
producing
semiconductor device
nickel
atomic percent
Prior art date
Application number
SE7613531A
Other languages
English (en)
Swedish (sv)
Inventor
A Nara
H Kondo
T Fujiwara
H Ikegawa
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of SE7613531L publication Critical patent/SE7613531L/

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
SE7613531A 1975-12-03 1976-12-02 Sett att framstella en elektrod for halvledaranordning SE7613531L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50144169A JPS5267961A (en) 1975-12-03 1975-12-03 Electrode formation of semiconductor unit

Publications (1)

Publication Number Publication Date
SE7613531L true SE7613531L (sv) 1977-06-04

Family

ID=15355793

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7613531A SE7613531L (sv) 1975-12-03 1976-12-02 Sett att framstella en elektrod for halvledaranordning

Country Status (4)

Country Link
US (1) US4224115A ( )
JP (1) JPS5267961A ( )
DE (1) DE2654476C3 ( )
SE (1) SE7613531L ( )

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
US4350994A (en) * 1979-10-04 1982-09-21 Wisconsin Alumni Research Foundation Semiconductor device having an amorphous metal layer contact
JP3403263B2 (ja) * 1994-11-14 2003-05-06 臼井国際産業株式会社 加工性・耐食性の均一性に優れた耐熱・耐食性めっき鋼材
JP3223829B2 (ja) * 1997-01-29 2001-10-29 新光電気工業株式会社 電気ニッケルめっき浴又は電気ニッケル合金めっき浴及びそれを用いためっき方法
US7262434B2 (en) * 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US7749877B2 (en) * 2006-03-07 2010-07-06 Siliconix Technology C. V. Process for forming Schottky rectifier with PtNi silicide Schottky barrier
US7701031B2 (en) * 2006-04-07 2010-04-20 United Microelectronics Corp. Integrated circuit structure and manufacturing method thereof
US20110147225A1 (en) 2007-07-20 2011-06-23 Rohm And Haas Electronic Materials Llc High speed method for plating palladium and palladium alloys
CN101348928B (zh) * 2007-07-20 2012-07-04 罗门哈斯电子材料有限公司 镀钯及镀钯合金之高速方法
CN105244317B (zh) * 2014-07-09 2018-11-20 中芯国际集成电路制造(上海)有限公司 一种硅化镍后形成工艺

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1098182A (en) * 1963-12-27 1968-01-10 Ibm Electrolyte or electroless plating process
JPS4733176B1 ( ) * 1967-01-11 1972-08-23
GB1207093A (en) * 1968-04-05 1970-09-30 Matsushita Electronics Corp Improvements in or relating to schottky barrier semiconductor devices
FR2058385A1 (en) * 1969-08-20 1971-05-28 Ibm Diode with schottky barrier
US3699408A (en) * 1970-01-23 1972-10-17 Nippon Electric Co Gallium-arsenide schottky barrier type semiconductor device
JPS4733178U ( ) * 1971-05-14 1972-12-13
JPS5117870B2 ( ) * 1973-12-01 1976-06-05
US3932880A (en) * 1974-11-26 1976-01-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with Schottky barrier

Also Published As

Publication number Publication date
DE2654476A1 (de) 1977-06-23
DE2654476B2 (de) 1978-11-09
DE2654476C3 (de) 1982-02-18
US4224115A (en) 1980-09-23
JPS5267961A (en) 1977-06-06

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