JPS5263686A - Non-voltatile semiconductor memory device - Google Patents

Non-voltatile semiconductor memory device

Info

Publication number
JPS5263686A
JPS5263686A JP50139588A JP13958875A JPS5263686A JP S5263686 A JPS5263686 A JP S5263686A JP 50139588 A JP50139588 A JP 50139588A JP 13958875 A JP13958875 A JP 13958875A JP S5263686 A JPS5263686 A JP S5263686A
Authority
JP
Japan
Prior art keywords
voltatile
memory device
semiconductor memory
increase
transistor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50139588A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5528552B2 (enExample
Inventor
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50139588A priority Critical patent/JPS5263686A/ja
Publication of JPS5263686A publication Critical patent/JPS5263686A/ja
Publication of JPS5528552B2 publication Critical patent/JPS5528552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]

Landscapes

  • Non-Volatile Memory (AREA)
JP50139588A 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device Granted JPS5263686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50139588A JPS5263686A (en) 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50139588A JPS5263686A (en) 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5263686A true JPS5263686A (en) 1977-05-26
JPS5528552B2 JPS5528552B2 (enExample) 1980-07-29

Family

ID=15248751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50139588A Granted JPS5263686A (en) 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5263686A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4764479A (en) * 1980-02-20 1988-08-16 Hitachi, Limited Semiconductor integrated circuit device and method of manufacturing the same
US5101250A (en) * 1988-06-28 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Electrically programmable non-volatile memory device and manufacturing method thereof
EP0551728A3 (enExample) * 1992-01-15 1994-01-19 Nat Semiconductor Corp

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4764479A (en) * 1980-02-20 1988-08-16 Hitachi, Limited Semiconductor integrated circuit device and method of manufacturing the same
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US5101250A (en) * 1988-06-28 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Electrically programmable non-volatile memory device and manufacturing method thereof
EP0551728A3 (enExample) * 1992-01-15 1994-01-19 Nat Semiconductor Corp

Also Published As

Publication number Publication date
JPS5528552B2 (enExample) 1980-07-29

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