JPS5250175A - Electrostatic induction type thyristor - Google Patents

Electrostatic induction type thyristor

Info

Publication number
JPS5250175A
JPS5250175A JP50126111A JP12611175A JPS5250175A JP S5250175 A JPS5250175 A JP S5250175A JP 50126111 A JP50126111 A JP 50126111A JP 12611175 A JP12611175 A JP 12611175A JP S5250175 A JPS5250175 A JP S5250175A
Authority
JP
Japan
Prior art keywords
induction type
electrostatic induction
type thyristor
decreasing
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50126111A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6132828B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Kentaro Nakamura
Takashi Kiregawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Semiconductor Research Foundation
Original Assignee
Mitsubishi Electric Corp
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Semiconductor Research Foundation filed Critical Mitsubishi Electric Corp
Priority to JP50126111A priority Critical patent/JPS5250175A/ja
Priority to US05/733,930 priority patent/US4086611A/en
Priority to US05/760,370 priority patent/US4171995A/en
Publication of JPS5250175A publication Critical patent/JPS5250175A/ja
Publication of JPS6132828B2 publication Critical patent/JPS6132828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Thyristors (AREA)
JP50126111A 1975-10-20 1975-10-20 Electrostatic induction type thyristor Granted JPS5250175A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50126111A JPS5250175A (en) 1975-10-20 1975-10-20 Electrostatic induction type thyristor
US05/733,930 US4086611A (en) 1975-10-20 1976-10-19 Static induction type thyristor
US05/760,370 US4171995A (en) 1975-10-20 1977-01-18 Epitaxial deposition process for producing an electrostatic induction type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50126111A JPS5250175A (en) 1975-10-20 1975-10-20 Electrostatic induction type thyristor

Publications (2)

Publication Number Publication Date
JPS5250175A true JPS5250175A (en) 1977-04-21
JPS6132828B2 JPS6132828B2 (enrdf_load_stackoverflow) 1986-07-29

Family

ID=14926888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50126111A Granted JPS5250175A (en) 1975-10-20 1975-10-20 Electrostatic induction type thyristor

Country Status (1)

Country Link
JP (1) JPS5250175A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143181A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Field effect type thyristor
JPS5651866A (en) * 1979-10-05 1981-05-09 Hitachi Ltd Electric field effect type thyrister and driving method thereof
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法
JP2007324601A (ja) * 2006-06-02 2007-12-13 Infineon Technologies Ag ロバスト性が高く、スイッチング損失の少ない、ソフトスイッチング半導体素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1156997A (en) * 1965-10-21 1969-07-02 Bbc Brown Boveri & Cie Improvements in and relating to Controllable Semi-Conductor Devices
JPS4951884A (enrdf_load_stackoverflow) * 1972-06-09 1974-05-20
JPS5012987A (enrdf_load_stackoverflow) * 1973-05-18 1975-02-10

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1156997A (en) * 1965-10-21 1969-07-02 Bbc Brown Boveri & Cie Improvements in and relating to Controllable Semi-Conductor Devices
JPS4951884A (enrdf_load_stackoverflow) * 1972-06-09 1974-05-20
JPS5012987A (enrdf_load_stackoverflow) * 1973-05-18 1975-02-10

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143181A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Field effect type thyristor
JPS5651866A (en) * 1979-10-05 1981-05-09 Hitachi Ltd Electric field effect type thyrister and driving method thereof
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法
JP2007324601A (ja) * 2006-06-02 2007-12-13 Infineon Technologies Ag ロバスト性が高く、スイッチング損失の少ない、ソフトスイッチング半導体素子

Also Published As

Publication number Publication date
JPS6132828B2 (enrdf_load_stackoverflow) 1986-07-29

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