JPS5244175A - Method of flat etching of silicon substrate - Google Patents

Method of flat etching of silicon substrate

Info

Publication number
JPS5244175A
JPS5244175A JP50119770A JP11977075A JPS5244175A JP S5244175 A JPS5244175 A JP S5244175A JP 50119770 A JP50119770 A JP 50119770A JP 11977075 A JP11977075 A JP 11977075A JP S5244175 A JPS5244175 A JP S5244175A
Authority
JP
Japan
Prior art keywords
silicon substrate
flat etching
etching
flat
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50119770A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5530294B2 (OSRAM
Inventor
Masayoshi Yoshimura
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50119770A priority Critical patent/JPS5244175A/ja
Priority to NL7610970A priority patent/NL7610970A/xx
Priority to DE19762644940 priority patent/DE2644940A1/de
Publication of JPS5244175A publication Critical patent/JPS5244175A/ja
Publication of JPS5530294B2 publication Critical patent/JPS5530294B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/644—
    • H10W15/00—
    • H10W15/01—

Landscapes

  • Weting (AREA)
  • Element Separation (AREA)
JP50119770A 1975-10-06 1975-10-06 Method of flat etching of silicon substrate Granted JPS5244175A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50119770A JPS5244175A (en) 1975-10-06 1975-10-06 Method of flat etching of silicon substrate
NL7610970A NL7610970A (nl) 1975-10-06 1976-10-04 Werkwijze voor het vlakmaken van een silicium- substraat door etsen.
DE19762644940 DE2644940A1 (de) 1975-10-06 1976-10-05 Aetzverfahren zum abflachen eines siliciumsubstrats

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50119770A JPS5244175A (en) 1975-10-06 1975-10-06 Method of flat etching of silicon substrate

Publications (2)

Publication Number Publication Date
JPS5244175A true JPS5244175A (en) 1977-04-06
JPS5530294B2 JPS5530294B2 (OSRAM) 1980-08-09

Family

ID=14769758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50119770A Granted JPS5244175A (en) 1975-10-06 1975-10-06 Method of flat etching of silicon substrate

Country Status (3)

Country Link
JP (1) JPS5244175A (OSRAM)
DE (1) DE2644940A1 (OSRAM)
NL (1) NL7610970A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187125A (en) * 1976-12-27 1980-02-05 Raytheon Company Method for manufacturing semiconductor structures by anisotropic and isotropic etching
US4278987A (en) * 1977-10-17 1981-07-14 Hitachi, Ltd. Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
JPS6272974U (OSRAM) * 1985-10-28 1987-05-11

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148131U (ja) * 1982-03-30 1983-10-05 住金鋼材工業株式会社 ブラケツト式サポ−ト足場

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148131U (ja) * 1982-03-30 1983-10-05 住金鋼材工業株式会社 ブラケツト式サポ−ト足場

Also Published As

Publication number Publication date
JPS5530294B2 (OSRAM) 1980-08-09
DE2644940A1 (de) 1977-04-28
NL7610970A (nl) 1977-04-12

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