JPS5216989A - Process of semiconductor thin film - Google Patents
Process of semiconductor thin filmInfo
- Publication number
- JPS5216989A JPS5216989A JP50092520A JP9252075A JPS5216989A JP S5216989 A JPS5216989 A JP S5216989A JP 50092520 A JP50092520 A JP 50092520A JP 9252075 A JP9252075 A JP 9252075A JP S5216989 A JPS5216989 A JP S5216989A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- source
- dopant
- melted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50092520A JPS5216989A (en) | 1975-07-31 | 1975-07-31 | Process of semiconductor thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50092520A JPS5216989A (en) | 1975-07-31 | 1975-07-31 | Process of semiconductor thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5216989A true JPS5216989A (en) | 1977-02-08 |
JPS5625032B2 JPS5625032B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1981-06-10 |
Family
ID=14056596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50092520A Granted JPS5216989A (en) | 1975-07-31 | 1975-07-31 | Process of semiconductor thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5216989A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55141341A (en) * | 1979-04-20 | 1980-11-05 | Kuniyoshi Nakamura | Oscillation type operating rod and its production |
JPS57206530A (en) * | 1981-06-12 | 1982-12-17 | Akihiko Nakamura | Manufacture of cam shaft |
JPS63163219U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1987-08-20 | 1988-10-25 |
-
1975
- 1975-07-31 JP JP50092520A patent/JPS5216989A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55141341A (en) * | 1979-04-20 | 1980-11-05 | Kuniyoshi Nakamura | Oscillation type operating rod and its production |
JPS57206530A (en) * | 1981-06-12 | 1982-12-17 | Akihiko Nakamura | Manufacture of cam shaft |
JPS63163219U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1987-08-20 | 1988-10-25 |
Also Published As
Publication number | Publication date |
---|---|
JPS5625032B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1981-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5216989A (en) | Process of semiconductor thin film | |
JPS5419663A (en) | Forming method of insulating films | |
JPS52129275A (en) | Impurity diffusion method | |
JPS51140199A (en) | Crystal working process | |
JPS5384457A (en) | Liquid-phase epitaxial growth method | |
JPS5258360A (en) | Production of semiconductor device | |
JPS5227354A (en) | Impurity diffusion method for iii-v group compound semiconductor region | |
JPS5237790A (en) | Process for production of polycrystalline semiconductor films | |
JPS5270754A (en) | Impurity doping method | |
JPS5346272A (en) | Impurity diffusion method | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS5333580A (en) | Production of semiconductor device | |
JPS5275273A (en) | Method of forming boron nitride-boron oxidesilicon oxide mixed film | |
JPS5287368A (en) | Production of semiconductor device | |
JPS5273673A (en) | Production of semiconductor device | |
JPS5348669A (en) | Growth method of semiconductor crystal | |
JPS51118960A (en) | Wafer form semiconductor doping material | |
JPS5272162A (en) | Production of semiconductor device | |
JPS5368569A (en) | Rough surfaced substrate for impurity diffusion | |
JPS5418670A (en) | Manufacture of semiconductor device | |
JPS5261956A (en) | Production of semiconductor device | |
JPS5287369A (en) | Production of semiconductor device | |
JPS5228867A (en) | Process for formation of pn junction | |
JPS5267981A (en) | Manufacture of semiconductor unit | |
JPS5230379A (en) | Process of semiconductor device |