JPS52147076A - Production of mis field-effect transistor - Google Patents

Production of mis field-effect transistor

Info

Publication number
JPS52147076A
JPS52147076A JP6296276A JP6296276A JPS52147076A JP S52147076 A JPS52147076 A JP S52147076A JP 6296276 A JP6296276 A JP 6296276A JP 6296276 A JP6296276 A JP 6296276A JP S52147076 A JPS52147076 A JP S52147076A
Authority
JP
Japan
Prior art keywords
production
effect transistor
same
mis field
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6296276A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5519065B2 (en:Method
Inventor
Kei Kirita
Takahiko Moriya
Yasutaka Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6296276A priority Critical patent/JPS52147076A/ja
Priority to US05/738,841 priority patent/US4063973A/en
Publication of JPS52147076A publication Critical patent/JPS52147076A/ja
Publication of JPS5519065B2 publication Critical patent/JPS5519065B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
JP6296276A 1975-11-10 1976-06-01 Production of mis field-effect transistor Granted JPS52147076A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6296276A JPS52147076A (en) 1976-06-01 1976-06-01 Production of mis field-effect transistor
US05/738,841 US4063973A (en) 1975-11-10 1976-11-04 Method of making a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6296276A JPS52147076A (en) 1976-06-01 1976-06-01 Production of mis field-effect transistor

Publications (2)

Publication Number Publication Date
JPS52147076A true JPS52147076A (en) 1977-12-07
JPS5519065B2 JPS5519065B2 (en:Method) 1980-05-23

Family

ID=13215447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6296276A Granted JPS52147076A (en) 1975-11-10 1976-06-01 Production of mis field-effect transistor

Country Status (1)

Country Link
JP (1) JPS52147076A (en:Method)

Also Published As

Publication number Publication date
JPS5519065B2 (en:Method) 1980-05-23

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