JPS52119186A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS52119186A
JPS52119186A JP3582476A JP3582476A JPS52119186A JP S52119186 A JPS52119186 A JP S52119186A JP 3582476 A JP3582476 A JP 3582476A JP 3582476 A JP3582476 A JP 3582476A JP S52119186 A JPS52119186 A JP S52119186A
Authority
JP
Japan
Prior art keywords
semiconductor
substrate
manufacture
impurity
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3582476A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6135705B2 (enExample
Inventor
Hiroshi Shiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3582476A priority Critical patent/JPS52119186A/ja
Priority to US05/782,418 priority patent/US4063901A/en
Publication of JPS52119186A publication Critical patent/JPS52119186A/ja
Publication of JPS6135705B2 publication Critical patent/JPS6135705B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H10P32/302—Doping polycrystalline silicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP3582476A 1976-03-31 1976-03-31 Manufacture of semiconductor Granted JPS52119186A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3582476A JPS52119186A (en) 1976-03-31 1976-03-31 Manufacture of semiconductor
US05/782,418 US4063901A (en) 1976-03-31 1977-03-29 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3582476A JPS52119186A (en) 1976-03-31 1976-03-31 Manufacture of semiconductor

Publications (2)

Publication Number Publication Date
JPS52119186A true JPS52119186A (en) 1977-10-06
JPS6135705B2 JPS6135705B2 (enExample) 1986-08-14

Family

ID=12452692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3582476A Granted JPS52119186A (en) 1976-03-31 1976-03-31 Manufacture of semiconductor

Country Status (2)

Country Link
US (1) US4063901A (enExample)
JP (1) JPS52119186A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL190710C (nl) * 1978-02-10 1994-07-01 Nec Corp Geintegreerde halfgeleiderketen.
JPS5939906B2 (ja) * 1978-05-04 1984-09-27 超エル・エス・アイ技術研究組合 半導体装置の製造方法
DE2927824A1 (de) * 1978-07-12 1980-01-31 Vlsi Technology Res Ass Halbleitervorrichtungen und ihre herstellung
NL7900280A (nl) * 1979-01-15 1980-07-17 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
DE2926874A1 (de) * 1979-07-03 1981-01-22 Siemens Ag Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie
NL186352C (nl) * 1980-08-27 1990-11-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
US6251470B1 (en) * 1997-10-09 2001-06-26 Micron Technology, Inc. Methods of forming insulating materials, and methods of forming insulating materials around a conductive component
US6858526B2 (en) * 1998-07-14 2005-02-22 Micron Technology, Inc. Methods of forming materials between conductive electrical components, and insulating materials
US6333556B1 (en) 1997-10-09 2001-12-25 Micron Technology, Inc. Insulating materials
US6103590A (en) * 1997-12-12 2000-08-15 Texas Instruments Incorporated SiC patterning of porous silicon
US6350679B1 (en) 1999-08-03 2002-02-26 Micron Technology, Inc. Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry
US6437417B1 (en) * 2000-08-16 2002-08-20 Micron Technology, Inc. Method for making shallow trenches for isolation

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon

Also Published As

Publication number Publication date
US4063901A (en) 1977-12-20
JPS6135705B2 (enExample) 1986-08-14

Similar Documents

Publication Publication Date Title
JPS52140280A (en) Semiconductor device
JPS52119186A (en) Manufacture of semiconductor
JPS5339058A (en) Production of semiconductor device
JPS531471A (en) Manufacture for semiconductor device
JPS5380183A (en) Semiconductor device
JPS538072A (en) Semiconductor device
JPS52128068A (en) Manufacture of cooling piece for semiconductor rectifying device
JPS5357773A (en) Semiconductor device
JPS51125698A (en) The formation of silicon dioxide film
JPS51145267A (en) Manufacture of semiconductor device
JPS5339093A (en) Production of silicon gate complementary type mis semiconductor device
JPS52141565A (en) Manufacture of semiconductor unit
JPS5268388A (en) Semiconductor integrated circuit
JPS52119192A (en) Semiconductor
JPS5373087A (en) Manufacture of semiconductor device
JPS5323579A (en) Production of semiconductor device
JPS5247685A (en) Process for production of mos type semiconductor device
JPS547879A (en) Manufacture for semiconductor device
JPS5367357A (en) Manufacture of semiconductor device
JPS53108385A (en) Manufacture for semiconductor device
JPS5289467A (en) Semiconductor device
JPS52153676A (en) Production of semiconductor device
JPS5277666A (en) Production of semiconductive device
JPS5228881A (en) Silicon gated, field effect semiconductor device
JPS5258372A (en) Semiconductor device and its production