JPS52119160A - Semiconductor circuit with insulating gate type field dffect transisto r - Google Patents

Semiconductor circuit with insulating gate type field dffect transisto r

Info

Publication number
JPS52119160A
JPS52119160A JP3582576A JP3582576A JPS52119160A JP S52119160 A JPS52119160 A JP S52119160A JP 3582576 A JP3582576 A JP 3582576A JP 3582576 A JP3582576 A JP 3582576A JP S52119160 A JPS52119160 A JP S52119160A
Authority
JP
Japan
Prior art keywords
dffect
transisto
type field
semiconductor circuit
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3582576A
Other languages
English (en)
Other versions
JPS6160614B2 (ja
Inventor
Akira Osami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3582576A priority Critical patent/JPS52119160A/ja
Priority to US05/782,419 priority patent/US4090096A/en
Priority to GB13196/77A priority patent/GB1524768A/en
Publication of JPS52119160A publication Critical patent/JPS52119160A/ja
Publication of JPS6160614B2 publication Critical patent/JPS6160614B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076Timing circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/04Shaping pulses by increasing duration; by decreasing duration
    • H03K5/05Shaping pulses by increasing duration; by decreasing duration by the use of clock signals or other time reference signals
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/135Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of time reference signals, e.g. clock signals

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Pulse Circuits (AREA)
  • Dram (AREA)
JP3582576A 1976-03-31 1976-03-31 Semiconductor circuit with insulating gate type field dffect transisto r Granted JPS52119160A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP3582576A JPS52119160A (en) 1976-03-31 1976-03-31 Semiconductor circuit with insulating gate type field dffect transisto r
US05/782,419 US4090096A (en) 1976-03-31 1977-03-29 Timing signal generator circuit
GB13196/77A GB1524768A (en) 1976-03-31 1977-03-29 Timming signal generating circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3582576A JPS52119160A (en) 1976-03-31 1976-03-31 Semiconductor circuit with insulating gate type field dffect transisto r

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59260429A Division JPS60216626A (ja) 1984-12-10 1984-12-10 パルス発生回路

Publications (2)

Publication Number Publication Date
JPS52119160A true JPS52119160A (en) 1977-10-06
JPS6160614B2 JPS6160614B2 (ja) 1986-12-22

Family

ID=12452719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3582576A Granted JPS52119160A (en) 1976-03-31 1976-03-31 Semiconductor circuit with insulating gate type field dffect transisto r

Country Status (3)

Country Link
US (1) US4090096A (ja)
JP (1) JPS52119160A (ja)
GB (1) GB1524768A (ja)

Families Citing this family (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239991A (en) * 1978-09-07 1980-12-16 Texas Instruments Incorporated Clock voltage generator for semiconductor memory
US4189784A (en) * 1978-12-22 1980-02-19 Sperry Rand Corporation Adaptive circuit for extracting timing information from a repetitive series of time coherent pulses
US4222112A (en) * 1979-02-09 1980-09-09 Bell Telephone Laboratories, Incorporated Dynamic RAM organization for reducing peak current
JPS55132595A (en) * 1979-04-04 1980-10-15 Nec Corp Semiconductor circuit
US4379974A (en) * 1980-09-10 1983-04-12 Mostek Corporation Delay stage for a clock generator
JPS5764895U (ja) * 1980-10-03 1982-04-17
JPS57171840A (en) * 1981-04-16 1982-10-22 Toshiba Corp Driving circuit
US4456837A (en) * 1981-10-15 1984-06-26 Rca Corporation Circuitry for generating non-overlapping pulse trains
US4472644A (en) * 1981-12-10 1984-09-18 Mostek Corporation Bootstrapped clock driver including delay means
JPS599735A (ja) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp クロツク発生回路
JPS5922444A (ja) * 1982-07-28 1984-02-04 Nec Corp 駆動回路
US4496852A (en) * 1982-11-15 1985-01-29 International Business Machines Corporation Low power clock generator
US4540898A (en) * 1983-03-07 1985-09-10 Motorola, Inc. Clocked buffer circuit using a self-bootstrapping transistor
JPS60694A (ja) * 1983-06-15 1985-01-05 Hitachi Ltd 半導体メモリ
JPS60182096A (ja) * 1984-02-29 1985-09-17 Fujitsu Ltd 半導体記憶装置
US4658161A (en) * 1985-08-13 1987-04-14 Hewlett-Packard Company Split phase loop
SE9300679L (sv) * 1993-03-01 1994-09-02 Ellemtel Utvecklings Ab Bitsynkroniserare
AU7981094A (en) * 1993-11-09 1995-05-29 Motorola, Inc. Circuit and method for generating a delayed output signal
JP4785271B2 (ja) 2001-04-27 2011-10-05 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
JP4439761B2 (ja) 2001-05-11 2010-03-24 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
TW582005B (en) 2001-05-29 2004-04-01 Semiconductor Energy Lab Pulse output circuit, shift register, and display device
SG148032A1 (en) * 2001-07-16 2008-12-31 Semiconductor Energy Lab Light emitting device
US6788108B2 (en) * 2001-07-30 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4831895B2 (ja) * 2001-08-03 2011-12-07 株式会社半導体エネルギー研究所 半導体装置
US7218349B2 (en) * 2001-08-09 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4397555B2 (ja) 2001-11-30 2010-01-13 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP4339103B2 (ja) 2002-12-25 2009-10-07 株式会社半導体エネルギー研究所 半導体装置及び表示装置
CA2443206A1 (en) 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
JP3962953B2 (ja) * 2003-12-26 2007-08-22 カシオ計算機株式会社 レベルシフト回路及び該レベルシフト回路を備えた信号出力回路
CA2472671A1 (en) 2004-06-29 2005-12-29 Ignis Innovation Inc. Voltage-programming scheme for current-driven amoled displays
CA2490858A1 (en) 2004-12-07 2006-06-07 Ignis Innovation Inc. Driving method for compensated voltage-programming of amoled displays
US10012678B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
US9171500B2 (en) 2011-05-20 2015-10-27 Ignis Innovation Inc. System and methods for extraction of parasitic parameters in AMOLED displays
US9275579B2 (en) 2004-12-15 2016-03-01 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9799246B2 (en) 2011-05-20 2017-10-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US8599191B2 (en) 2011-05-20 2013-12-03 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10013907B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
EP2688058A3 (en) 2004-12-15 2014-12-10 Ignis Innovation Inc. Method and system for programming, calibrating and driving a light emitting device display
US20140111567A1 (en) 2005-04-12 2014-04-24 Ignis Innovation Inc. System and method for compensation of non-uniformities in light emitting device displays
US9280933B2 (en) 2004-12-15 2016-03-08 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US8576217B2 (en) 2011-05-20 2013-11-05 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
CA2496642A1 (en) 2005-02-10 2006-08-10 Ignis Innovation Inc. Fast settling time driving method for organic light-emitting diode (oled) displays based on current programming
WO2006130981A1 (en) 2005-06-08 2006-12-14 Ignis Innovation Inc. Method and system for driving a light emitting device display
CA2518276A1 (en) 2005-09-13 2007-03-13 Ignis Innovation Inc. Compensation technique for luminance degradation in electro-luminance devices
US9153341B2 (en) * 2005-10-18 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Shift register, semiconductor device, display device, and electronic device
US9489891B2 (en) 2006-01-09 2016-11-08 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
CA2570898C (en) 2006-01-09 2008-08-05 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
US9269322B2 (en) 2006-01-09 2016-02-23 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
TW200746022A (en) 2006-04-19 2007-12-16 Ignis Innovation Inc Stable driving scheme for active matrix displays
US8330492B2 (en) 2006-06-02 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
CA2556961A1 (en) 2006-08-15 2008-02-15 Ignis Innovation Inc. Oled compensation technique based on oled capacitance
KR20100134125A (ko) 2008-04-18 2010-12-22 이그니스 이노베이션 인크. 발광 소자 디스플레이에 대한 시스템 및 구동 방법
CA2637343A1 (en) 2008-07-29 2010-01-29 Ignis Innovation Inc. Improving the display source driver
US9370075B2 (en) 2008-12-09 2016-06-14 Ignis Innovation Inc. System and method for fast compensation programming of pixels in a display
CA2688870A1 (en) 2009-11-30 2011-05-30 Ignis Innovation Inc. Methode and techniques for improving display uniformity
US9311859B2 (en) 2009-11-30 2016-04-12 Ignis Innovation Inc. Resetting cycle for aging compensation in AMOLED displays
US9384698B2 (en) 2009-11-30 2016-07-05 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
CA2669367A1 (en) 2009-06-16 2010-12-16 Ignis Innovation Inc Compensation technique for color shift in displays
US10319307B2 (en) 2009-06-16 2019-06-11 Ignis Innovation Inc. Display system with compensation techniques and/or shared level resources
TWI508037B (zh) 2009-09-10 2015-11-11 Semiconductor Energy Lab 半導體裝置和顯示裝置
US8497828B2 (en) 2009-11-12 2013-07-30 Ignis Innovation Inc. Sharing switch TFTS in pixel circuits
US10996258B2 (en) 2009-11-30 2021-05-04 Ignis Innovation Inc. Defect detection and correction of pixel circuits for AMOLED displays
US8803417B2 (en) 2009-12-01 2014-08-12 Ignis Innovation Inc. High resolution pixel architecture
CA2687631A1 (en) 2009-12-06 2011-06-06 Ignis Innovation Inc Low power driving scheme for display applications
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
CA2692097A1 (en) 2010-02-04 2011-08-04 Ignis Innovation Inc. Extracting correlation curves for light emitting device
US10176736B2 (en) 2010-02-04 2019-01-08 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US20140313111A1 (en) 2010-02-04 2014-10-23 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10089921B2 (en) 2010-02-04 2018-10-02 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10163401B2 (en) 2010-02-04 2018-12-25 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US9881532B2 (en) 2010-02-04 2018-01-30 Ignis Innovation Inc. System and method for extracting correlation curves for an organic light emitting device
CA2696778A1 (en) 2010-03-17 2011-09-17 Ignis Innovation Inc. Lifetime, uniformity, parameter extraction methods
US8907991B2 (en) 2010-12-02 2014-12-09 Ignis Innovation Inc. System and methods for thermal compensation in AMOLED displays
US9886899B2 (en) 2011-05-17 2018-02-06 Ignis Innovation Inc. Pixel Circuits for AMOLED displays
US9351368B2 (en) 2013-03-08 2016-05-24 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US20140368491A1 (en) 2013-03-08 2014-12-18 Ignis Innovation Inc. Pixel circuits for amoled displays
US9530349B2 (en) 2011-05-20 2016-12-27 Ignis Innovations Inc. Charged-based compensation and parameter extraction in AMOLED displays
US9466240B2 (en) 2011-05-26 2016-10-11 Ignis Innovation Inc. Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed
CN103562989B (zh) 2011-05-27 2016-12-14 伊格尼斯创新公司 用于amoled显示器的老化补偿的系统和方法
EP3404646B1 (en) 2011-05-28 2019-12-25 Ignis Innovation Inc. Method for fast compensation programming of pixels in a display
US9324268B2 (en) 2013-03-15 2016-04-26 Ignis Innovation Inc. Amoled displays with multiple readout circuits
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US8937632B2 (en) 2012-02-03 2015-01-20 Ignis Innovation Inc. Driving system for active-matrix displays
US9747834B2 (en) 2012-05-11 2017-08-29 Ignis Innovation Inc. Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore
US8922544B2 (en) 2012-05-23 2014-12-30 Ignis Innovation Inc. Display systems with compensation for line propagation delay
US9336717B2 (en) 2012-12-11 2016-05-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9786223B2 (en) 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
DE112014000422T5 (de) 2013-01-14 2015-10-29 Ignis Innovation Inc. Ansteuerschema für Emissionsanzeigen, das eine Kompensation für Ansteuertransistorschwankungen bereitstellt
US9830857B2 (en) 2013-01-14 2017-11-28 Ignis Innovation Inc. Cleaning common unwanted signals from pixel measurements in emissive displays
CA2894717A1 (en) 2015-06-19 2016-12-19 Ignis Innovation Inc. Optoelectronic device characterization in array with shared sense line
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
EP3043338A1 (en) 2013-03-14 2016-07-13 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for amoled displays
CN110634431B (zh) 2013-04-22 2023-04-18 伊格尼斯创新公司 检测和制造显示面板的方法
CN107452314B (zh) 2013-08-12 2021-08-24 伊格尼斯创新公司 用于要被显示器显示的图像的补偿图像数据的方法和装置
US9761170B2 (en) 2013-12-06 2017-09-12 Ignis Innovation Inc. Correction for localized phenomena in an image array
US9741282B2 (en) 2013-12-06 2017-08-22 Ignis Innovation Inc. OLED display system and method
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
DE102015206281A1 (de) 2014-04-08 2015-10-08 Ignis Innovation Inc. Anzeigesystem mit gemeinsam genutzten Niveauressourcen für tragbare Vorrichtungen
CA2873476A1 (en) 2014-12-08 2016-06-08 Ignis Innovation Inc. Smart-pixel display architecture
CA2879462A1 (en) 2015-01-23 2016-07-23 Ignis Innovation Inc. Compensation for color variation in emissive devices
CA2886862A1 (en) 2015-04-01 2016-10-01 Ignis Innovation Inc. Adjusting display brightness for avoiding overheating and/or accelerated aging
CA2889870A1 (en) 2015-05-04 2016-11-04 Ignis Innovation Inc. Optical feedback system
CA2892714A1 (en) 2015-05-27 2016-11-27 Ignis Innovation Inc Memory bandwidth reduction in compensation system
US10657895B2 (en) 2015-07-24 2020-05-19 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2898282A1 (en) 2015-07-24 2017-01-24 Ignis Innovation Inc. Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays
US10373554B2 (en) 2015-07-24 2019-08-06 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2900170A1 (en) 2015-08-07 2017-02-07 Gholamreza Chaji Calibration of pixel based on improved reference values
CA2908285A1 (en) 2015-10-14 2017-04-14 Ignis Innovation Inc. Driver with multiple color pixel structure
JP7149748B2 (ja) 2018-07-04 2022-10-07 東京エレクトロン株式会社 基板処理システム、基板搬送方法、および制御プログラム
JP7109287B2 (ja) 2018-07-09 2022-07-29 東京エレクトロン株式会社 基板処理システム、基板処理方法、および制御プログラム
WO2020128713A1 (ja) 2018-12-20 2020-06-25 株式会社半導体エネルギー研究所 単極性トランジスタを用いて構成された論理回路、および、半導体装置
JP7257914B2 (ja) 2019-08-08 2023-04-14 東京エレクトロン株式会社 基板処理システムおよび基板処理方法
JP7285745B2 (ja) 2019-09-18 2023-06-02 東京エレクトロン株式会社 成膜システム、磁化特性測定装置、および成膜方法
JP7523318B2 (ja) * 2020-03-10 2024-07-26 東京エレクトロン株式会社 膜厚測定装置および膜厚測定方法、ならびに成膜システムおよび成膜方法
JP2022125560A (ja) 2021-02-17 2022-08-29 東京エレクトロン株式会社 膜厚測定装置、成膜システム及び膜厚測定方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3774055A (en) * 1972-01-24 1973-11-20 Nat Semiconductor Corp Clocked bootstrap inverter circuit
US3778784A (en) * 1972-02-14 1973-12-11 Intel Corp Memory system incorporating a memory cell and timing means on a single semiconductor substrate
US3859637A (en) * 1973-06-28 1975-01-07 Ibm On-chip auxiliary latch for down-powering array latch decoders
US3903431A (en) * 1973-12-28 1975-09-02 Teletype Corp Clocked dynamic inverter
US3906464A (en) * 1974-06-03 1975-09-16 Motorola Inc External data control preset system for inverting cell random access memory
US3959781A (en) * 1974-11-04 1976-05-25 Intel Corporation Semiconductor random access memory
US3988617A (en) * 1974-12-23 1976-10-26 International Business Machines Corporation Field effect transistor bias circuit
US4061933A (en) * 1975-12-29 1977-12-06 Mostek Corporation Clock generator and delay stage
US4038646A (en) * 1976-03-12 1977-07-26 Intel Corporation Dynamic mos ram

Also Published As

Publication number Publication date
US4090096A (en) 1978-05-16
GB1524768A (en) 1978-09-13
JPS6160614B2 (ja) 1986-12-22

Similar Documents

Publication Publication Date Title
JPS52119160A (en) Semiconductor circuit with insulating gate type field dffect transisto r
JPS5334438A (en) Semiconductor circuit using insulating gate type field effect transistor
JPS5232654A (en) Single stabilized multiple circuit
JPS5223275A (en) Field effect transistor and its manufacturing method
JPS5212868A (en) Automatic synchronizing signal generating circuit
JPS5250659A (en) Timing output generation circuit
JPS5334428A (en) Detecting circuit for video information
JPS522475A (en) Speed detection circuit
JPS5330857A (en) Signal change detector circuit
JPS522154A (en) Waveform shaping circuit
JPS5292326A (en) Inverter
JPS52146139A (en) Obtaining method for 3 state output by using 2 state ttl circuit
JPS51114970A (en) Potential dividing method and potential divider
JPS5282058A (en) Generating variable gain circuit for delay signal
JPS5235967A (en) Pule circuit
JPS5280770A (en) Gate circuit
JPS5250657A (en) Timing output generation circuit
JPS5349935A (en) Pulse duration decision circuit
JPS53146549A (en) Gate circuit
JPS5252580A (en) High frequency high output field effect transistor
JPS5379360A (en) Trigger pulse generating circuit
JPS5316509A (en) Thyristor driving system
JPS5267550A (en) Compensation circuit
JPS5275959A (en) Frequency step-multiplication circuit
JPS5292325A (en) Inverter