JPS52117562A - Manufacturing method and device for semiconductor device - Google Patents
Manufacturing method and device for semiconductor deviceInfo
- Publication number
- JPS52117562A JPS52117562A JP3483076A JP3483076A JPS52117562A JP S52117562 A JPS52117562 A JP S52117562A JP 3483076 A JP3483076 A JP 3483076A JP 3483076 A JP3483076 A JP 3483076A JP S52117562 A JPS52117562 A JP S52117562A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- manufacturing
- semiconductor device
- measuring
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To clearly grasp the etching termination of wiring metal layer for etching of A with etching liquid containing HNO3, by measuring the etching completion through oxidation restoration potential or optical absorption.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3483076A JPS52117562A (en) | 1976-03-30 | 1976-03-30 | Manufacturing method and device for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3483076A JPS52117562A (en) | 1976-03-30 | 1976-03-30 | Manufacturing method and device for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52117562A true JPS52117562A (en) | 1977-10-03 |
Family
ID=12425105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3483076A Pending JPS52117562A (en) | 1976-03-30 | 1976-03-30 | Manufacturing method and device for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52117562A (en) |
-
1976
- 1976-03-30 JP JP3483076A patent/JPS52117562A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52117562A (en) | Manufacturing method and device for semiconductor device | |
JPS52122479A (en) | Etching solution of silicon | |
JPS5339873A (en) | Etching method of silicon semiconductor substrate containing gold | |
JPS5245270A (en) | Semiconductor device | |
JPS5210676A (en) | Semiconductor device | |
JPS5436182A (en) | Manufacture for semiconductor device | |
JPS52113162A (en) | Preparation of semiconductor device | |
JPS5377168A (en) | Production of semiconductor device | |
JPS5375771A (en) | Manufacture for semiconductor device | |
JPS543470A (en) | Etching method | |
JPS5368070A (en) | Etching method | |
JPS5428566A (en) | Manufacture of semiconductor device | |
JPS5272173A (en) | Semiconductor device and its production | |
JPS52123171A (en) | Anisotropic etching method of semiconductor single crystal | |
JPS52155972A (en) | Production of semiconductor device | |
JPS5324291A (en) | Production of semiconductor devi ce | |
JPS53121571A (en) | Electrode formation method for semiconductor device | |
JPS5314599A (en) | Display device | |
JPS52155050A (en) | Production of semiconductor device | |
JPS53117963A (en) | Production of semiconductor device | |
JPS52155055A (en) | Production of semiconductor device | |
JPS52155054A (en) | Production of semiconductor device | |
JPS52155052A (en) | Production of semiconductor device | |
JPS51147259A (en) | Manufacturing process of semiconductor device | |
JPS5436181A (en) | Manufacture for semiconductor device |