JPS5192789A - - Google Patents

Info

Publication number
JPS5192789A
JPS5192789A JP50144554A JP14455475A JPS5192789A JP S5192789 A JPS5192789 A JP S5192789A JP 50144554 A JP50144554 A JP 50144554A JP 14455475 A JP14455475 A JP 14455475A JP S5192789 A JPS5192789 A JP S5192789A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50144554A
Other languages
Japanese (ja)
Other versions
JPS5757439B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5192789A publication Critical patent/JPS5192789A/ja
Publication of JPS5757439B2 publication Critical patent/JPS5757439B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP50144554A 1974-12-04 1975-12-04 Expired JPS5757439B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52379/74A GB1487587A (en) 1974-12-04 1974-12-04 Crystal growth

Publications (2)

Publication Number Publication Date
JPS5192789A true JPS5192789A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-08-14
JPS5757439B2 JPS5757439B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-12-04

Family

ID=10463705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50144554A Expired JPS5757439B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-12-04 1975-12-04

Country Status (4)

Country Link
US (1) US4211600A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5757439B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE7538536U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1487587A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001261495A (ja) * 2000-03-23 2001-09-26 Komatsu Electronic Metals Co Ltd 無欠陥結晶の製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
GB1577413A (en) * 1976-03-17 1980-10-22 Metals Research Ltd Growth of crystalline material
JPS59116737A (ja) * 1982-12-24 1984-07-05 Hitachi Ltd フイルム密着装置
US4539173A (en) * 1983-03-17 1985-09-03 Commissariat A L'energie Atomique Process for preparing plates of a metallic or semimetallic material from a liquid mass
DE3310815A1 (de) * 1983-03-24 1984-09-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum ziehen von kristallinen koerpern aus der schmelze unter verwendung von als ziehduesen wirkenden formgebungsteilen
FR2550965B1 (fr) * 1983-08-30 1985-10-11 Comp Generale Electricite Dispositif pour deposer une couche de silicium polycristallin sur un ruban de carbone
US4605468A (en) * 1984-07-10 1986-08-12 Hughes Aircraft Company Shaped crystal fiber growth method
DE3735434A1 (de) * 1987-10-20 1989-05-03 Juergen Wisotzki Verfahren und vorrichtung zur herstellung von einkristallinen halbleiterplatten
JPH0446442U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1990-08-23 1992-04-20
US5394825A (en) * 1992-02-28 1995-03-07 Crystal Systems, Inc. Method and apparatus for growing shaped crystals
EP0732427B1 (en) * 1995-03-16 2002-02-06 Sumitomo Electric Industries, Limited A method and apparatus for the growth of a single crystal
US5690734A (en) * 1995-03-22 1997-11-25 Ngk Insulators, Ltd. Single crystal growing method
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
NL1028423C2 (nl) * 2005-02-28 2006-08-29 Stichting Famecon Productiemethode van zonnecellen.
FR2892426B1 (fr) * 2005-10-26 2008-01-11 Apollon Solar Soc Par Actions Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
KR100882578B1 (ko) * 2007-11-29 2009-02-12 한국원자력연구원 쵸크랄스키 결정성장 장치 및 이를 이용한 염폐기물의정제방법
JP2014057981A (ja) * 2012-09-18 2014-04-03 Toyota Motor Corp 引上式連続鋳造装置及び引上式連続鋳造方法
RU170190U1 (ru) * 2016-08-22 2017-04-18 федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) УСТРОЙСТВО ДЛЯ ВЫРАЩИВАНИЯ ПРОФИЛИРОВАННЫХ МОНОКРИСТАЛЛОВ β-Ga2O3 ИЗ СОБСТВЕННОГО РАСПЛАВА

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50153570A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-05-29 1975-12-10
JPS50153594A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-05-29 1975-12-10

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE562704A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1956-11-28
NL244873A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1958-11-17
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals
DE1286510B (de) * 1962-11-23 1969-01-09 Siemens Ag Verfahren zur Herstellung von bandfoermigen, aus Halbleitermaterial bestehenden Einkristallen durch Ziehen aus einer Schmelze
US3291650A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Control of crystal size
GB1113069A (en) * 1964-07-29 1968-05-08 Nat Res Dev Crystalline material
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
DE1220832B (de) * 1964-09-22 1966-07-14 Siemens Ag Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3759671A (en) * 1971-10-15 1973-09-18 Gen Motors Corp Horizontal growth of crystal ribbons

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50153570A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-05-29 1975-12-10
JPS50153594A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-05-29 1975-12-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001261495A (ja) * 2000-03-23 2001-09-26 Komatsu Electronic Metals Co Ltd 無欠陥結晶の製造方法

Also Published As

Publication number Publication date
DE2554354A1 (de) 1976-06-10
US4211600A (en) 1980-07-08
DE2554354B2 (de) 1980-08-07
DE2554354C3 (de) 1981-03-12
GB1487587A (en) 1977-10-05
JPS5757439B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-12-04
DE7538536U (de) 1977-06-08

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