JPS51129172A - Method of liquid phase epitaxial growth - Google Patents

Method of liquid phase epitaxial growth

Info

Publication number
JPS51129172A
JPS51129172A JP5358775A JP5358775A JPS51129172A JP S51129172 A JPS51129172 A JP S51129172A JP 5358775 A JP5358775 A JP 5358775A JP 5358775 A JP5358775 A JP 5358775A JP S51129172 A JPS51129172 A JP S51129172A
Authority
JP
Japan
Prior art keywords
liquid phase
epitaxial growth
phase epitaxial
base
intimacy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5358775A
Other languages
Japanese (ja)
Inventor
Susumu Yoshida
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5358775A priority Critical patent/JPS51129172A/en
Publication of JPS51129172A publication Critical patent/JPS51129172A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the uniform grow surface by making intimacy between base and fused liquid fine, and by improving the crystallizing of epitaxial layer with mono-crystal base covered with evaporate membrane of liquid phase epitaxial growth especially of Ga.
COPYRIGHT: (C)1976,JPO&Japio
JP5358775A 1975-05-02 1975-05-02 Method of liquid phase epitaxial growth Pending JPS51129172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5358775A JPS51129172A (en) 1975-05-02 1975-05-02 Method of liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5358775A JPS51129172A (en) 1975-05-02 1975-05-02 Method of liquid phase epitaxial growth

Publications (1)

Publication Number Publication Date
JPS51129172A true JPS51129172A (en) 1976-11-10

Family

ID=12946978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5358775A Pending JPS51129172A (en) 1975-05-02 1975-05-02 Method of liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS51129172A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833352A (en) * 1971-09-02 1973-05-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833352A (en) * 1971-09-02 1973-05-09

Similar Documents

Publication Publication Date Title
JPS51129172A (en) Method of liquid phase epitaxial growth
JPS5243362A (en) Liquid growth method
JPS534778A (en) Crystal growth method with molecular beam
JPS5245273A (en) Method for production of semiconductor device
JPS52117062A (en) Liquid phase epitaxial growth process
JPS51140561A (en) Liquid phase epitaxial growing method
JPS5211860A (en) Liquid phase epitaxial device
JPS524782A (en) Liquid phase epitaxial growth method
JPS5232669A (en) Liquid-phase epitaxial growth method
JPS52135264A (en) Liquid phase epitaxial growth method
JPS547861A (en) Liquid phase epitaxial growth method
JPS5244193A (en) Epitaxial growth method
JPS5228864A (en) Process for multilayer epitaxial growth
JPS5216972A (en) Epitachisial growing method of semic-conductor of iii-v family chemica l compound
JPS5337184A (en) Epitaxially growing method in liquid phase
JPS5228865A (en) Process for multilayer epitaxial growth in liquid phase
JPS52155189A (en) Multiple layer crystal growth
JPS5249766A (en) Apparatus for producing semiconductor crystal
JPS5288276A (en) Liquid-phase epitaxial growth
JPS5228866A (en) Process for liquid epitaxial growth
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS5228863A (en) Process for growing in liquid phase
JPS5286775A (en) Bebeling method for semiconductor substrate
JPS5345171A (en) Molecular beam epitaxial growth method
JPS5261957A (en) Liquid phase epitaxial growth