JPS501977A - - Google Patents

Info

Publication number
JPS501977A
JPS501977A JP49035079A JP3507974A JPS501977A JP S501977 A JPS501977 A JP S501977A JP 49035079 A JP49035079 A JP 49035079A JP 3507974 A JP3507974 A JP 3507974A JP S501977 A JPS501977 A JP S501977A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49035079A
Other versions
JPS5839574B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2315469A external-priority patent/DE2315469C3/de
Application filed filed Critical
Publication of JPS501977A publication Critical patent/JPS501977A/ja
Publication of JPS5839574B2 publication Critical patent/JPS5839574B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is ac
    • G05F1/40—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices
    • G05F1/44—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only
    • G05F1/45—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only being controlled rectifiers in series with the load
    • G05F1/455—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only being controlled rectifiers in series with the load with phase control
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
JP49035079A 1973-03-28 1974-03-28 コウジユンドハンドウタイザイリヨウ ノ セイゾウホウホウ Expired JPS5839574B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2315469A DE2315469C3 (de) 1973-03-28 1973-03-28 Verfahren und Vorrichtung zum Herstellen von hochreinem Halbleitermaterial

Publications (2)

Publication Number Publication Date
JPS501977A true JPS501977A (ja) 1975-01-10
JPS5839574B2 JPS5839574B2 (ja) 1983-08-31

Family

ID=5876210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49035079A Expired JPS5839574B2 (ja) 1973-03-28 1974-03-28 コウジユンドハンドウタイザイリヨウ ノ セイゾウホウホウ

Country Status (4)

Country Link
US (1) US3941900A (ja)
JP (1) JPS5839574B2 (ja)
BE (1) BE806098A (ja)
IT (1) IT1004414B (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320756A (en) * 1976-08-09 1978-02-25 Matsushita Electric Ind Co Ltd Oscillator device
JPS5480284A (en) * 1977-12-01 1979-06-26 Wacker Chemitronic Method of manufacturing high purity semiconductor material and high purity metal
JPS60248006A (ja) * 1984-05-24 1985-12-07 Nec Corp 発振器
JPS61205007A (ja) * 1985-03-08 1986-09-11 Toshiba Corp 電圧制御形発振器
JPS62224181A (ja) * 1986-03-26 1987-10-02 Toshiba Corp 副搬送波処理回路
JP2010011729A (ja) * 2008-06-03 2010-01-14 Wacker Chemie Ag 柱状の半導体材料を伝導加熱するために電気エネルギーを変換する装置
JP2014205141A (ja) * 2011-06-22 2014-10-30 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 腐食性ガスの温度処理装置および温度処理方法
JP2015212227A (ja) * 2015-08-26 2015-11-26 住友電気工業株式会社 炭化珪素単結晶の製造方法および製造装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2928456C2 (de) * 1979-07-13 1983-07-07 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von hochreinem Silicium
JPH0521020Y2 (ja) * 1985-12-05 1993-05-31
DE3674000D1 (de) * 1986-06-25 1990-10-11 Mania Gmbh Verfahren und vorrichtung zum elektrischen pruefen von leiterplatten.
JPS6348164U (ja) * 1986-09-16 1988-04-01
JPH0729874B2 (ja) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 多結晶シリコン製造装置の芯線間接続用ブリッジ
KR100768147B1 (ko) * 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
MY156940A (en) * 2008-03-26 2016-04-15 Gt Solar Inc System and methods for distributing gas in a chemical vapor deposition reactor
KR20100139092A (ko) * 2008-03-26 2010-12-31 지티 솔라 인코퍼레이티드 금-코팅된 폴리실리콘 반응기 시스템 및 방법
JP5481886B2 (ja) * 2008-03-27 2014-04-23 三菱マテリアル株式会社 多結晶シリコン製造装置
ES2331283B1 (es) * 2008-06-25 2010-10-05 Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) Reactor de deposito de silicio de gran pureza para aplicaciones fotovoltaicas.
WO2010066479A1 (de) * 2008-12-09 2010-06-17 Centrotherm Sitec Gmbh Verfahren zur stromversorgung eines cvd-prozesses bei der siliziumabscheidung
DE202009003325U1 (de) 2009-03-11 2009-06-18 Aeg Power Solutions Gmbh Vorrichtung zum Zünden und zur Inbetriebnahme von Siliziumstäben
DE202010017531U1 (de) * 2010-05-17 2012-10-04 Centrotherm Sitec Gmbh Vorrichtung zum Anlegen einer Spannung an eine Vielzahl von Siliziumstäben in einem CVD-Reaktor
KR101311739B1 (ko) * 2013-01-14 2013-10-14 주식회사 아이제이피에스 폴리실리콘 제조장치
EP2765698B1 (de) * 2013-02-06 2018-10-24 Siemens Aktiengesellschaft Anordnung zum Zünden von Dünnstäben aus elektrisch leitfähigem Material, insbesondere von Siliziumdünnstäben
CN110800378B (zh) * 2017-06-27 2021-12-28 佳能安内华股份有限公司 等离子体处理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL258754A (ja) * 1954-05-18 1900-01-01
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
NL236697A (ja) * 1958-05-16
NL256255A (ja) * 1959-11-02
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3686475A (en) * 1971-03-04 1972-08-22 Gen Motors Corp Control circuit for a liquid vaporizing tool

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320756A (en) * 1976-08-09 1978-02-25 Matsushita Electric Ind Co Ltd Oscillator device
JPS5480284A (en) * 1977-12-01 1979-06-26 Wacker Chemitronic Method of manufacturing high purity semiconductor material and high purity metal
JPS5820297B2 (ja) * 1977-12-01 1983-04-22 ワツカ−↓−ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク↓−グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング 高純度半導体材料および高純度金属の製造方法
JPS60248006A (ja) * 1984-05-24 1985-12-07 Nec Corp 発振器
JPH0469442B2 (ja) * 1984-05-24 1992-11-06 Nippon Electric Co
JPS61205007A (ja) * 1985-03-08 1986-09-11 Toshiba Corp 電圧制御形発振器
JPS62224181A (ja) * 1986-03-26 1987-10-02 Toshiba Corp 副搬送波処理回路
JP2010011729A (ja) * 2008-06-03 2010-01-14 Wacker Chemie Ag 柱状の半導体材料を伝導加熱するために電気エネルギーを変換する装置
JP2014205141A (ja) * 2011-06-22 2014-10-30 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 腐食性ガスの温度処理装置および温度処理方法
JP2015212227A (ja) * 2015-08-26 2015-11-26 住友電気工業株式会社 炭化珪素単結晶の製造方法および製造装置

Also Published As

Publication number Publication date
JPS5839574B2 (ja) 1983-08-31
BE806098A (fr) 1974-02-01
US3941900A (en) 1976-03-02
IT1004414B (it) 1976-07-10

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