JPS4946487A - - Google Patents

Info

Publication number
JPS4946487A
JPS4946487A JP8258673A JP8258673A JPS4946487A JP S4946487 A JPS4946487 A JP S4946487A JP 8258673 A JP8258673 A JP 8258673A JP 8258673 A JP8258673 A JP 8258673A JP S4946487 A JPS4946487 A JP S4946487A
Authority
JP
Japan
Prior art keywords
detector
electrodes
semiconductor body
strips
strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8258673A
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722235680 external-priority patent/DE2235680C3/de
Application filed filed Critical
Publication of JPS4946487A publication Critical patent/JPS4946487A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10W72/5363—
    • H10W72/5524—
    • H10W90/753—

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP8258673A 1972-07-20 1973-07-19 Pending JPS4946487A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722235680 DE2235680C3 (de) 1972-07-20 Ortsauflösende Detektoranordnung und Verfahren zu ihrer Herstellung

Publications (1)

Publication Number Publication Date
JPS4946487A true JPS4946487A (cg-RX-API-DMAC10.html) 1974-05-04

Family

ID=5851195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8258673A Pending JPS4946487A (cg-RX-API-DMAC10.html) 1972-07-20 1973-07-19

Country Status (4)

Country Link
US (1) US3939555A (cg-RX-API-DMAC10.html)
JP (1) JPS4946487A (cg-RX-API-DMAC10.html)
FR (1) FR2194047B1 (cg-RX-API-DMAC10.html)
GB (1) GB1393627A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219018A (en) * 1975-08-04 1977-01-14 Nippon Telegr & Teleph Corp <Ntt> Automatic equalizing system
JPS63156437A (ja) * 1986-12-19 1988-06-29 Fujitsu Ltd デ−タ伝送システムにおけるプリエンフアシス制御方法及び装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467342A (en) * 1982-07-15 1984-08-21 Rca Corporation Multi-chip imager
FR2536908B1 (fr) * 1982-11-30 1986-03-14 Telecommunications Sa Procede de fabrication d'un detecteur infrarouge matriciel a eclairage par la face avant
US5461246A (en) * 1994-05-12 1995-10-24 Regents Of The University Of Minnesota Photodetector with first and second contacts
US6153501A (en) 1998-05-19 2000-11-28 Micron Technology, Inc. Method of reducing overetch during the formation of a semiconductor device
US5498570A (en) * 1994-09-15 1996-03-12 Micron Technology Inc. Method of reducing overetch during the formation of a semiconductor device
JP2985731B2 (ja) * 1995-05-31 1999-12-06 松下電器産業株式会社 Ｘ線撮像装置
GB2315157B (en) * 1996-07-11 1998-09-30 Simage Oy Imaging apparatus
US6051501A (en) * 1996-10-09 2000-04-18 Micron Technology, Inc. Method of reducing overetch during the formation of a semiconductor device
JPH10253762A (ja) * 1997-03-07 1998-09-25 Horiba Ltd エネルギー分散型半導体ｘ線検出器
CH699805A2 (de) * 2008-10-30 2010-04-30 Huber+Suhner Ag Koaxialkabel.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same
US3383760A (en) * 1965-08-09 1968-05-21 Rca Corp Method of making semiconductor devices
US3622906A (en) * 1967-10-24 1971-11-23 Rca Corp Light-emitting diode array
US3518750A (en) * 1968-10-02 1970-07-07 Nat Semiconductor Corp Method of manufacturing a misfet

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219018A (en) * 1975-08-04 1977-01-14 Nippon Telegr & Teleph Corp <Ntt> Automatic equalizing system
JPS63156437A (ja) * 1986-12-19 1988-06-29 Fujitsu Ltd デ−タ伝送システムにおけるプリエンフアシス制御方法及び装置

Also Published As

Publication number Publication date
FR2194047B1 (cg-RX-API-DMAC10.html) 1977-02-18
GB1393627A (en) 1975-05-07
DE2235680B2 (de) 1977-03-10
US3939555A (en) 1976-02-24
DE2235680A1 (de) 1974-02-07
FR2194047A1 (cg-RX-API-DMAC10.html) 1974-02-22

Similar Documents

Publication Publication Date Title
FR2194047B1 (cg-RX-API-DMAC10.html)
US3960622A (en) Method of making strip-shaped multiple conductor
CH524252A (de) Anordnung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial
IT1143690B (it) Procedimento per produrre su un substrato uno strato dotato di struttura nella tecnologia dei semiconduttori
JPS57201070A (en) Semiconductor device
JPS52131478A (en) Semiconductor device
ES374056A1 (es) Dispositivo de barrera de pontencial.
JPS5367371A (en) Semiconductor device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS51116675A (en) Manufacturing method for a semiconductor device
JPS52115669A (en) Semiconductor memory device
JPS523383A (en) Manufacturing method of semiconductor device electrode
JPS52129279A (en) Production of semiconductor device
JPS52117063A (en) Preparation of ohmic ontact layer in semiconductor device
JPS53126871A (en) Diode
FR2081017A2 (en) Fabrication of a semiconductor device
JPS5353965A (en) Semiconductor device and its production
JPS51136290A (en) Short emitter type thyristor
JPS5615061A (en) Semiconductor memory device
JPS52104072A (en) High voltage semiconductor device
JPS53106589A (en) Semiconductor radiation detector
JPS5310986A (en) Semidonductor memory device
JPS5240986A (en) Process for production of semiconductor element
JPS5272186A (en) Production of mis type semiconductor device
JPS51134075A (en) Method to manufacture the semiconductor unit