FR2194047B1 - - Google Patents

Info

Publication number
FR2194047B1
FR2194047B1 FR7326578A FR7326578A FR2194047B1 FR 2194047 B1 FR2194047 B1 FR 2194047B1 FR 7326578 A FR7326578 A FR 7326578A FR 7326578 A FR7326578 A FR 7326578A FR 2194047 B1 FR2194047 B1 FR 2194047B1
Authority
FR
France
Prior art keywords
detector
electrodes
semiconductor body
strips
strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7326578A
Other languages
English (en)
French (fr)
Other versions
FR2194047A1 (cg-RX-API-DMAC10.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722235680 external-priority patent/DE2235680C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2194047A1 publication Critical patent/FR2194047A1/fr
Application granted granted Critical
Publication of FR2194047B1 publication Critical patent/FR2194047B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10W72/5363—
    • H10W72/5524—
    • H10W90/753—

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
FR7326578A 1972-07-20 1973-07-19 Expired FR2194047B1 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722235680 DE2235680C3 (de) 1972-07-20 Ortsauflösende Detektoranordnung und Verfahren zu ihrer Herstellung

Publications (2)

Publication Number Publication Date
FR2194047A1 FR2194047A1 (cg-RX-API-DMAC10.html) 1974-02-22
FR2194047B1 true FR2194047B1 (cg-RX-API-DMAC10.html) 1977-02-18

Family

ID=5851195

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7326578A Expired FR2194047B1 (cg-RX-API-DMAC10.html) 1972-07-20 1973-07-19

Country Status (4)

Country Link
US (1) US3939555A (cg-RX-API-DMAC10.html)
JP (1) JPS4946487A (cg-RX-API-DMAC10.html)
FR (1) FR2194047B1 (cg-RX-API-DMAC10.html)
GB (1) GB1393627A (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219018A (en) * 1975-08-04 1977-01-14 Nippon Telegr & Teleph Corp <Ntt> Automatic equalizing system
US4467342A (en) * 1982-07-15 1984-08-21 Rca Corporation Multi-chip imager
FR2536908B1 (fr) * 1982-11-30 1986-03-14 Telecommunications Sa Procede de fabrication d'un detecteur infrarouge matriciel a eclairage par la face avant
JPH0687539B2 (ja) * 1986-12-19 1994-11-02 富士通株式会社 デ−タ伝送システムにおけるプリエンフアシス制御方法及び装置
US5461246A (en) * 1994-05-12 1995-10-24 Regents Of The University Of Minnesota Photodetector with first and second contacts
US6153501A (en) 1998-05-19 2000-11-28 Micron Technology, Inc. Method of reducing overetch during the formation of a semiconductor device
US5498570A (en) * 1994-09-15 1996-03-12 Micron Technology Inc. Method of reducing overetch during the formation of a semiconductor device
JP2985731B2 (ja) * 1995-05-31 1999-12-06 松下電器産業株式会社 Ｘ線撮像装置
GB2315157B (en) * 1996-07-11 1998-09-30 Simage Oy Imaging apparatus
US6051501A (en) * 1996-10-09 2000-04-18 Micron Technology, Inc. Method of reducing overetch during the formation of a semiconductor device
JPH10253762A (ja) * 1997-03-07 1998-09-25 Horiba Ltd エネルギー分散型半導体ｘ線検出器
CH699805A2 (de) * 2008-10-30 2010-04-30 Huber+Suhner Ag Koaxialkabel.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same
US3383760A (en) * 1965-08-09 1968-05-21 Rca Corp Method of making semiconductor devices
US3622906A (en) * 1967-10-24 1971-11-23 Rca Corp Light-emitting diode array
US3518750A (en) * 1968-10-02 1970-07-07 Nat Semiconductor Corp Method of manufacturing a misfet

Also Published As

Publication number Publication date
JPS4946487A (cg-RX-API-DMAC10.html) 1974-05-04
GB1393627A (en) 1975-05-07
DE2235680B2 (de) 1977-03-10
US3939555A (en) 1976-02-24
DE2235680A1 (de) 1974-02-07
FR2194047A1 (cg-RX-API-DMAC10.html) 1974-02-22

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Legal Events

Date Code Title Description
ST Notification of lapse