JPS4813572B1
(ja)
*
|
1969-12-01 |
1973-04-27 |
|
|
US3885196A
(en)
*
|
1972-11-30 |
1975-05-20 |
Us Army |
Pocketable direct current electroluminescent display device addressed by MOS or MNOS circuitry
|
US3982268A
(en)
*
|
1973-10-30 |
1976-09-21 |
General Electric Company |
Deep diode lead throughs
|
US3959579A
(en)
*
|
1974-08-19 |
1976-05-25 |
International Business Machines Corporation |
Apertured semi-conductor device mounted on a substrate
|
US3969745A
(en)
*
|
1974-09-18 |
1976-07-13 |
Texas Instruments Incorporated |
Interconnection in multi element planar structures
|
US4074342A
(en)
*
|
1974-12-20 |
1978-02-14 |
International Business Machines Corporation |
Electrical package for lsi devices and assembly process therefor
|
US3962052A
(en)
*
|
1975-04-14 |
1976-06-08 |
International Business Machines Corporation |
Process for forming apertures in silicon bodies
|
US3986196A
(en)
*
|
1975-06-30 |
1976-10-12 |
Varian Associates |
Through-substrate source contact for microwave FET
|
US4097890A
(en)
*
|
1976-06-23 |
1978-06-27 |
Hewlett-Packard Company |
Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture
|
US4306925A
(en)
*
|
1977-01-11 |
1981-12-22 |
Pactel Corporation |
Method of manufacturing high density printed circuit
|
US4104674A
(en)
*
|
1977-02-07 |
1978-08-01 |
Honeywell Inc. |
Double sided hybrid mosaic focal plane
|
US4188709A
(en)
*
|
1977-02-07 |
1980-02-19 |
Honeywell Inc. |
Double sided hybrid mosaic focal plane
|
US4275410A
(en)
*
|
1978-11-29 |
1981-06-23 |
Hughes Aircraft Company |
Three-dimensionally structured microelectronic device
|
US4263341A
(en)
*
|
1978-12-19 |
1981-04-21 |
Western Electric Company, Inc. |
Processes of making two-sided printed circuit boards, with through-hole connections
|
IT8048031A0
(it)
*
|
1979-04-09 |
1980-02-28 |
Raytheon Co |
Perfezionamento nei dispositivi a semiconduttore ad effetto di campo
|
JPS55156395A
(en)
*
|
1979-05-24 |
1980-12-05 |
Fujitsu Ltd |
Method of fabricating hollow multilayer printed board
|
US4379307A
(en)
*
|
1980-06-16 |
1983-04-05 |
Rockwell International Corporation |
Integrated circuit chip transmission line
|
DE3070833D1
(en)
*
|
1980-09-19 |
1985-08-08 |
Ibm Deutschland |
Structure with a silicon body that presents an aperture and method of making this structure
|
DE3137695A1
(de)
*
|
1981-09-22 |
1983-04-21 |
Siemens AG, 1000 Berlin und 8000 München |
Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung
|
US4761681A
(en)
*
|
1982-09-08 |
1988-08-02 |
Texas Instruments Incorporated |
Method for fabricating a semiconductor contact and interconnect structure using orientation dependent etching and thermomigration
|
US4720738A
(en)
*
|
1982-09-08 |
1988-01-19 |
Texas Instruments Incorporated |
Focal plane array structure including a signal processing system
|
DE3235839A1
(de)
*
|
1982-09-28 |
1984-03-29 |
Siemens AG, 1000 Berlin und 8000 München |
Halbleiterschaltung
|
GB2145875B
(en)
*
|
1983-08-12 |
1986-11-26 |
Standard Telephones Cables Ltd |
Infra-red-detector
|
GB2150749B
(en)
*
|
1983-12-03 |
1987-09-23 |
Standard Telephones Cables Ltd |
Integrated circuits
|
US4613891A
(en)
*
|
1984-02-17 |
1986-09-23 |
At&T Bell Laboratories |
Packaging microminiature devices
|
US4670764A
(en)
*
|
1984-06-08 |
1987-06-02 |
Eaton Corporation |
Multi-channel power JFET with buried field shaping regions
|
US4897708A
(en)
*
|
1986-07-17 |
1990-01-30 |
Laser Dynamics, Inc. |
Semiconductor wafer array
|
US4954875A
(en)
*
|
1986-07-17 |
1990-09-04 |
Laser Dynamics, Inc. |
Semiconductor wafer array with electrically conductive compliant material
|
JP2547017B2
(ja)
*
|
1987-05-25 |
1996-10-23 |
アルプス電気株式会社 |
光センサ
|
GB2206729B
(en)
*
|
1987-07-01 |
1990-10-24 |
British Aerospace |
A method of forming electrical contacts in a multi-level interconnect system
|
US4862322A
(en)
*
|
1988-05-02 |
1989-08-29 |
Bickford Harry R |
Double electronic device structure having beam leads solderlessly bonded between contact locations on each device and projecting outwardly from therebetween
|
US5463246A
(en)
*
|
1988-12-29 |
1995-10-31 |
Sharp Kabushiki Kaisha |
Large scale high density semiconductor apparatus
|
US7198969B1
(en)
*
|
1990-09-24 |
2007-04-03 |
Tessera, Inc. |
Semiconductor chip assemblies, methods of making same and components for same
|
US5198695A
(en)
*
|
1990-12-10 |
1993-03-30 |
Westinghouse Electric Corp. |
Semiconductor wafer with circuits bonded to a substrate
|
US5202754A
(en)
*
|
1991-09-13 |
1993-04-13 |
International Business Machines Corporation |
Three-dimensional multichip packages and methods of fabrication
|
US6355976B1
(en)
|
1992-05-14 |
2002-03-12 |
Reveo, Inc |
Three-dimensional packaging technology for multi-layered integrated circuits
|
US5336930A
(en)
*
|
1992-06-26 |
1994-08-09 |
The United States Of America As Represented By The Secretary Of The Air Force |
Backside support for thin wafers
|
US5489554A
(en)
*
|
1992-07-21 |
1996-02-06 |
Hughes Aircraft Company |
Method of making a 3-dimensional circuit assembly having electrical contacts that extend through the IC layer
|
US5424245A
(en)
*
|
1994-01-04 |
1995-06-13 |
Motorola, Inc. |
Method of forming vias through two-sided substrate
|
US5464794A
(en)
*
|
1994-05-11 |
1995-11-07 |
United Microelectronics Corporation |
Method of forming contact openings having concavo-concave shape
|
US5657206A
(en)
*
|
1994-06-23 |
1997-08-12 |
Cubic Memory, Inc. |
Conductive epoxy flip-chip package and method
|
WO1996013062A1
(en)
*
|
1994-10-19 |
1996-05-02 |
Ceram Incorporated |
Apparatus and method of manufacturing stacked wafer array
|
US5841197A
(en)
*
|
1994-11-18 |
1998-11-24 |
Adamic, Jr.; Fred W. |
Inverted dielectric isolation process
|
US6124179A
(en)
*
|
1996-09-05 |
2000-09-26 |
Adamic, Jr.; Fred W. |
Inverted dielectric isolation process
|
US5599744A
(en)
*
|
1995-02-06 |
1997-02-04 |
Grumman Aerospace Corporation |
Method of forming a microcircuit via interconnect
|
US5618752A
(en)
*
|
1995-06-05 |
1997-04-08 |
Harris Corporation |
Method of fabrication of surface mountable integrated circuits
|
US5668409A
(en)
*
|
1995-06-05 |
1997-09-16 |
Harris Corporation |
Integrated circuit with edge connections and method
|
US5682062A
(en)
*
|
1995-06-05 |
1997-10-28 |
Harris Corporation |
System for interconnecting stacked integrated circuits
|
US5608264A
(en)
*
|
1995-06-05 |
1997-03-04 |
Harris Corporation |
Surface mountable integrated circuit with conductive vias
|
US5646067A
(en)
*
|
1995-06-05 |
1997-07-08 |
Harris Corporation |
Method of bonding wafers having vias including conductive material
|
US5814889A
(en)
*
|
1995-06-05 |
1998-09-29 |
Harris Corporation |
Intergrated circuit with coaxial isolation and method
|
US6013948A
(en)
|
1995-11-27 |
2000-01-11 |
Micron Technology, Inc. |
Stackable chip scale semiconductor package with mating contacts on opposed surfaces
|
US5739067A
(en)
*
|
1995-12-07 |
1998-04-14 |
Advanced Micro Devices, Inc. |
Method for forming active devices on and in exposed surfaces of both sides of a silicon wafer
|
US6861290B1
(en)
*
|
1995-12-19 |
2005-03-01 |
Micron Technology, Inc. |
Flip-chip adaptor package for bare die
|
US5736456A
(en)
*
|
1996-03-07 |
1998-04-07 |
Micron Technology, Inc. |
Method of forming conductive bumps on die for flip chip applications
|
US5825092A
(en)
*
|
1996-05-20 |
1998-10-20 |
Harris Corporation |
Integrated circuit with an air bridge having a lid
|
US5903058A
(en)
*
|
1996-07-17 |
1999-05-11 |
Micron Technology, Inc. |
Conductive bumps on die for flip chip application
|
JPH1168026A
(ja)
*
|
1997-06-13 |
1999-03-09 |
Ricoh Co Ltd |
配線用補助パッケージおよび印刷回路配線板構造
|
US6271598B1
(en)
*
|
1997-07-29 |
2001-08-07 |
Cubic Memory, Inc. |
Conductive epoxy flip-chip on chip
|
IL123207A0
(en)
*
|
1998-02-06 |
1998-09-24 |
Shellcase Ltd |
Integrated circuit device
|
USRE43112E1
(en)
|
1998-05-04 |
2012-01-17 |
Round Rock Research, Llc |
Stackable ball grid array package
|
WO2000007240A1
(en)
*
|
1998-07-27 |
2000-02-10 |
Reveo, Inc. |
Three-dimensional packaging technology for multi-layered integrated circuits
|
US7208725B2
(en)
*
|
1998-11-25 |
2007-04-24 |
Rohm And Haas Electronic Materials Llc |
Optoelectronic component with encapsulant
|
DE19918671B4
(de)
*
|
1999-04-23 |
2006-03-02 |
Giesecke & Devrient Gmbh |
Vertikal integrierbare Schaltung und Verfahren zu ihrer Herstellung
|
US7179740B1
(en)
*
|
1999-05-03 |
2007-02-20 |
United Microelectronics Corporation |
Integrated circuit with improved interconnect structure and process for making same
|
FR2793605B1
(fr)
*
|
1999-05-12 |
2001-07-27 |
St Microelectronics Sa |
Procede de mise en boitier d'une puce semiconductrice
|
US6544880B1
(en)
*
|
1999-06-14 |
2003-04-08 |
Micron Technology, Inc. |
Method of improving copper interconnects of semiconductor devices for bonding
|
US6617681B1
(en)
*
|
1999-06-28 |
2003-09-09 |
Intel Corporation |
Interposer and method of making same
|
US6300670B1
(en)
|
1999-07-26 |
2001-10-09 |
Stmicroelectronics, Inc. |
Backside bus vias
|
US6326689B1
(en)
*
|
1999-07-26 |
2001-12-04 |
Stmicroelectronics, Inc. |
Backside contact for touchchip
|
US6184570B1
(en)
*
|
1999-10-28 |
2001-02-06 |
Ericsson Inc. |
Integrated circuit dies including thermal stress reducing grooves and microelectronic packages utilizing the same
|
TW483129B
(en)
*
|
2000-10-05 |
2002-04-11 |
Amkor Technology Taiwan Linkou |
Package for image sensing device and its manufacturing process
|
US6693358B2
(en)
*
|
2000-10-23 |
2004-02-17 |
Matsushita Electric Industrial Co., Ltd. |
Semiconductor chip, wiring board and manufacturing process thereof as well as semiconductor device
|
US6910268B2
(en)
*
|
2001-03-27 |
2005-06-28 |
Formfactor, Inc. |
Method for fabricating an IC interconnect system including an in-street integrated circuit wafer via
|
CN100578816C
(zh)
*
|
2001-08-24 |
2010-01-06 |
肖特股份公司 |
用于形成触点的方法及封装的集成电路组件
|
US6856007B2
(en)
*
|
2001-08-28 |
2005-02-15 |
Tessera, Inc. |
High-frequency chip packages
|
US6661085B2
(en)
*
|
2002-02-06 |
2003-12-09 |
Intel Corporation |
Barrier structure against corrosion and contamination in three-dimensional (3-D) wafer-to-wafer vertical stack
|
US6762076B2
(en)
*
|
2002-02-20 |
2004-07-13 |
Intel Corporation |
Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices
|
US6668748B2
(en)
*
|
2002-03-01 |
2003-12-30 |
H2Eye (International) Limited |
Submersible articles and method of manufacture thereof
|
US6848177B2
(en)
*
|
2002-03-28 |
2005-02-01 |
Intel Corporation |
Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
|
US20030183943A1
(en)
*
|
2002-03-28 |
2003-10-02 |
Swan Johanna M. |
Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
|
US6908845B2
(en)
*
|
2002-03-28 |
2005-06-21 |
Intel Corporation |
Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
|
TWI232560B
(en)
*
|
2002-04-23 |
2005-05-11 |
Sanyo Electric Co |
Semiconductor device and its manufacture
|
TWI229435B
(en)
|
2002-06-18 |
2005-03-11 |
Sanyo Electric Co |
Manufacture of semiconductor device
|
DE10232914B4
(de)
*
|
2002-07-19 |
2004-11-04 |
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
Wiederverwendbarer Trägerwafer und Verfahren zur Herstellung desselben
|
US6902872B2
(en)
*
|
2002-07-29 |
2005-06-07 |
Hewlett-Packard Development Company, L.P. |
Method of forming a through-substrate interconnect
|
US6800930B2
(en)
*
|
2002-07-31 |
2004-10-05 |
Micron Technology, Inc. |
Semiconductor dice having back side redistribution layer accessed using through-silicon vias, and assemblies
|
US20040105244A1
(en)
*
|
2002-08-06 |
2004-06-03 |
Ilyas Mohammed |
Lead assemblies with offset portions and microelectronic assemblies with leads having offset portions
|
TWI227550B
(en)
*
|
2002-10-30 |
2005-02-01 |
Sanyo Electric Co |
Semiconductor device manufacturing method
|
US7754537B2
(en)
*
|
2003-02-25 |
2010-07-13 |
Tessera, Inc. |
Manufacture of mountable capped chips
|
US6972480B2
(en)
|
2003-06-16 |
2005-12-06 |
Shellcase Ltd. |
Methods and apparatus for packaging integrated circuit devices
|
JP4263953B2
(ja)
*
|
2003-06-23 |
2009-05-13 |
三洋電機株式会社 |
半導体装置及びその製造方法
|
JP2007528120A
(ja)
|
2003-07-03 |
2007-10-04 |
テッセラ テクノロジーズ ハンガリー コルラートルト フェレロェセーギュー タールシャシャーグ |
集積回路装置をパッケージングする方法及び装置
|
JP4401181B2
(ja)
*
|
2003-08-06 |
2010-01-20 |
三洋電機株式会社 |
半導体装置及びその製造方法
|
WO2005031861A1
(en)
*
|
2003-09-26 |
2005-04-07 |
Tessera, Inc. |
Structure and method of making capped chips including a flowable conductive medium
|
JP4170950B2
(ja)
*
|
2003-10-10 |
2008-10-22 |
松下電器産業株式会社 |
光学デバイスおよびその製造方法
|
US20050258529A1
(en)
*
|
2003-12-30 |
2005-11-24 |
Tessera, Inc. |
High-frequency chip packages
|
US20050189635A1
(en)
*
|
2004-03-01 |
2005-09-01 |
Tessera, Inc. |
Packaged acoustic and electromagnetic transducer chips
|
JP4205613B2
(ja)
*
|
2004-03-01 |
2009-01-07 |
エルピーダメモリ株式会社 |
半導体装置
|
US7705432B2
(en)
*
|
2004-04-13 |
2010-04-27 |
Vertical Circuits, Inc. |
Three dimensional six surface conformal die coating
|
US7215018B2
(en)
*
|
2004-04-13 |
2007-05-08 |
Vertical Circuits, Inc. |
Stacked die BGA or LGA component assembly
|
US7245021B2
(en)
|
2004-04-13 |
2007-07-17 |
Vertical Circuits, Inc. |
Micropede stacked die component assembly
|
US7087538B2
(en)
*
|
2004-08-16 |
2006-08-08 |
Intel Corporation |
Method to fill the gap between coupled wafers
|
US7112882B2
(en)
*
|
2004-08-25 |
2006-09-26 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Structures and methods for heat dissipation of semiconductor integrated circuits
|
US7419852B2
(en)
*
|
2004-08-27 |
2008-09-02 |
Micron Technology, Inc. |
Low temperature methods of forming back side redistribution layers in association with through wafer interconnects, semiconductor devices including same, and assemblies
|
DE102005010308B4
(de)
*
|
2005-03-03 |
2017-07-27 |
First Sensor Microelectronic Packaging Gmbh |
Verfahren zur Herstellung von Chips mit lötfähigen Anschlüssen auf der Rückseite
|
US8143095B2
(en)
*
|
2005-03-22 |
2012-03-27 |
Tessera, Inc. |
Sequential fabrication of vertical conductive interconnects in capped chips
|
US20080099924A1
(en)
*
|
2005-05-04 |
2008-05-01 |
Icemos Technology Corporation |
Silicon Wafer Having Through-Wafer Vias With A Predetermined Geometric Shape
|
TW200644165A
(en)
*
|
2005-05-04 |
2006-12-16 |
Icemos Technology Corp |
Silicon wafer having through-wafer vias
|
KR100817050B1
(ko)
*
|
2005-08-26 |
2008-03-26 |
삼성전자주식회사 |
웨이퍼 레벨의 반도체 칩 패키지의 제조방법
|
US7768085B2
(en)
*
|
2005-10-11 |
2010-08-03 |
Icemos Technology Ltd. |
Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes
|
US7560791B2
(en)
*
|
2005-10-28 |
2009-07-14 |
Icemos Technology Ltd. |
Front lit PIN/NIP diode having a continuous anode/cathode
|
US7576404B2
(en)
*
|
2005-12-16 |
2009-08-18 |
Icemos Technology Ltd. |
Backlit photodiode and method of manufacturing a backlit photodiode
|
TWI324800B
(en)
*
|
2005-12-28 |
2010-05-11 |
Sanyo Electric Co |
Method for manufacturing semiconductor device
|
US20070190747A1
(en)
*
|
2006-01-23 |
2007-08-16 |
Tessera Technologies Hungary Kft. |
Wafer level packaging to lidded chips
|
US7936062B2
(en)
*
|
2006-01-23 |
2011-05-03 |
Tessera Technologies Ireland Limited |
Wafer level chip packaging
|
KR100731351B1
(ko)
*
|
2006-02-01 |
2007-06-21 |
삼성전자주식회사 |
탄성 표면파 디바이스 웨이퍼 레벨 패키지 및 그 패키징방법
|
US20080029879A1
(en)
*
|
2006-03-01 |
2008-02-07 |
Tessera, Inc. |
Structure and method of making lidded chips
|
US7528458B2
(en)
*
|
2006-03-02 |
2009-05-05 |
Icemos Technology Ltd. |
Photodiode having increased proportion of light-sensitive area to light-insensitive area
|
TW200737506A
(en)
*
|
2006-03-07 |
2007-10-01 |
Sanyo Electric Co |
Semiconductor device and manufacturing method of the same
|
US7385283B2
(en)
|
2006-06-27 |
2008-06-10 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Three dimensional integrated circuit and method of making the same
|
US20080122040A1
(en)
*
|
2006-06-29 |
2008-05-29 |
Icemos Technology Corporation |
Varying Pitch Adapter and a Method of Forming a Varying Pitch Adapter
|
US7446424B2
(en)
*
|
2006-07-19 |
2008-11-04 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Interconnect structure for semiconductor package
|
WO2008021973A2
(en)
*
|
2006-08-10 |
2008-02-21 |
Icemos Technology Corporation |
Method of manufacturing a photodiode array with through-wafer vias
|
TWI367557B
(en)
*
|
2006-08-11 |
2012-07-01 |
Sanyo Electric Co |
Semiconductor device and manufaturing method thereof
|
JP5010247B2
(ja)
*
|
2006-11-20 |
2012-08-29 |
オンセミコンダクター・トレーディング・リミテッド |
半導体装置及びその製造方法
|
US8604605B2
(en)
|
2007-01-05 |
2013-12-10 |
Invensas Corp. |
Microelectronic assembly with multi-layer support structure
|
JPWO2008142764A1
(ja)
*
|
2007-05-18 |
2010-08-05 |
株式会社日本マイクロニクス |
積層型パッケージ、及び、積層型パッケージの形成方法
|
US20090001597A1
(en)
*
|
2007-06-27 |
2009-01-01 |
Texas Instruments Incorporated |
Semiconductor device having an interconnect electrically connecting a front and backside thereof and a method of manufacture therefor
|
KR100929464B1
(ko)
*
|
2007-12-21 |
2009-12-02 |
주식회사 동부하이텍 |
반도체칩, 이의 제조 방법 및 반도체칩 적층 패키지
|
US8137995B2
(en)
*
|
2008-12-11 |
2012-03-20 |
Stats Chippac, Ltd. |
Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures
|
US7939926B2
(en)
*
|
2008-12-12 |
2011-05-10 |
Qualcomm Incorporated |
Via first plus via last technique for IC interconnects
|
US9431298B2
(en)
|
2010-11-04 |
2016-08-30 |
Qualcomm Incorporated |
Integrated circuit chip customization using backside access
|
SG183648A1
(en)
*
|
2011-02-28 |
2012-09-27 |
Agency Science Tech & Res |
A wafer level package and a method of forming the same
|
US9343440B2
(en)
|
2011-04-11 |
2016-05-17 |
Infineon Technologies Americas Corp. |
Stacked composite device including a group III-V transistor and a group IV vertical transistor
|
US20120256190A1
(en)
*
|
2011-04-11 |
2012-10-11 |
International Rectifier Corporation |
Stacked Composite Device Including a Group III-V Transistor and a Group IV Diode
|
US8481425B2
(en)
|
2011-05-16 |
2013-07-09 |
United Microelectronics Corp. |
Method for fabricating through-silicon via structure
|
US8822336B2
(en)
|
2011-06-16 |
2014-09-02 |
United Microelectronics Corp. |
Through-silicon via forming method
|
US8828745B2
(en)
|
2011-07-06 |
2014-09-09 |
United Microelectronics Corp. |
Method for manufacturing through-silicon via
|
US8724832B2
(en)
|
2011-08-30 |
2014-05-13 |
Qualcomm Mems Technologies, Inc. |
Piezoelectric microphone fabricated on glass
|
US8824706B2
(en)
|
2011-08-30 |
2014-09-02 |
Qualcomm Mems Technologies, Inc. |
Piezoelectric microphone fabricated on glass
|
US8811636B2
(en)
|
2011-11-29 |
2014-08-19 |
Qualcomm Mems Technologies, Inc. |
Microspeaker with piezoelectric, metal and dielectric membrane
|
US8518823B2
(en)
|
2011-12-23 |
2013-08-27 |
United Microelectronics Corp. |
Through silicon via and method of forming the same
|
US8609529B2
(en)
|
2012-02-01 |
2013-12-17 |
United Microelectronics Corp. |
Fabrication method and structure of through silicon via
|
CN103296014A
(zh)
*
|
2012-02-28 |
2013-09-11 |
刘胜 |
扇出晶圆级半导体芯片三维堆叠封装结构及工艺
|
US9362267B2
(en)
|
2012-03-15 |
2016-06-07 |
Infineon Technologies Americas Corp. |
Group III-V and group IV composite switch
|
US8691600B2
(en)
|
2012-05-02 |
2014-04-08 |
United Microelectronics Corp. |
Method for testing through-silicon-via (TSV) structures
|
US8691688B2
(en)
|
2012-06-18 |
2014-04-08 |
United Microelectronics Corp. |
Method of manufacturing semiconductor structure
|
US9275933B2
(en)
|
2012-06-19 |
2016-03-01 |
United Microelectronics Corp. |
Semiconductor device
|
US8900996B2
(en)
|
2012-06-21 |
2014-12-02 |
United Microelectronics Corp. |
Through silicon via structure and method of fabricating the same
|
US8525296B1
(en)
|
2012-06-26 |
2013-09-03 |
United Microelectronics Corp. |
Capacitor structure and method of forming the same
|
US8912844B2
(en)
|
2012-10-09 |
2014-12-16 |
United Microelectronics Corp. |
Semiconductor structure and method for reducing noise therein
|
US9035457B2
(en)
|
2012-11-29 |
2015-05-19 |
United Microelectronics Corp. |
Substrate with integrated passive devices and method of manufacturing the same
|
US8716104B1
(en)
|
2012-12-20 |
2014-05-06 |
United Microelectronics Corp. |
Method of fabricating isolation structure
|
US8884398B2
(en)
|
2013-04-01 |
2014-11-11 |
United Microelectronics Corp. |
Anti-fuse structure and programming method thereof
|
US9287173B2
(en)
|
2013-05-23 |
2016-03-15 |
United Microelectronics Corp. |
Through silicon via and process thereof
|
US9123730B2
(en)
|
2013-07-11 |
2015-09-01 |
United Microelectronics Corp. |
Semiconductor device having through silicon trench shielding structure surrounding RF circuit
|
US9024416B2
(en)
|
2013-08-12 |
2015-05-05 |
United Microelectronics Corp. |
Semiconductor structure
|
US8916471B1
(en)
|
2013-08-26 |
2014-12-23 |
United Microelectronics Corp. |
Method for forming semiconductor structure having through silicon via for signal and shielding structure
|
US9048223B2
(en)
|
2013-09-03 |
2015-06-02 |
United Microelectronics Corp. |
Package structure having silicon through vias connected to ground potential
|
US9117804B2
(en)
|
2013-09-13 |
2015-08-25 |
United Microelectronics Corporation |
Interposer structure and manufacturing method thereof
|
US9343359B2
(en)
|
2013-12-25 |
2016-05-17 |
United Microelectronics Corp. |
Integrated structure and method for fabricating the same
|
US10340203B2
(en)
|
2014-02-07 |
2019-07-02 |
United Microelectronics Corp. |
Semiconductor structure with through silicon via and method for fabricating and testing the same
|
US20170186731A1
(en)
*
|
2015-12-23 |
2017-06-29 |
Sandisk Technologies Llc |
Solid state drive optimized for wafers
|
DE102017107648A1
(de)
*
|
2016-04-08 |
2017-10-12 |
X-Fab Semiconductor Foundries Ag |
Elektrische Durchkontaktierung(en) in einem Halbleitersubstrat und ein zugehöriges Herstellverfahren
|
US10163864B1
(en)
*
|
2017-08-16 |
2018-12-25 |
Globalfoundries Inc. |
Vertically stacked wafers and methods of forming same
|
US11315831B2
(en)
*
|
2019-07-22 |
2022-04-26 |
International Business Machines Corporation |
Dual redistribution layer structure
|
US11682617B2
(en)
|
2020-12-22 |
2023-06-20 |
International Business Machines Corporation |
High aspect ratio vias for integrated circuits
|