JPS4851874A - - Google Patents

Info

Publication number
JPS4851874A
JPS4851874A JP10756672A JP10756672A JPS4851874A JP S4851874 A JPS4851874 A JP S4851874A JP 10756672 A JP10756672 A JP 10756672A JP 10756672 A JP10756672 A JP 10756672A JP S4851874 A JPS4851874 A JP S4851874A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10756672A
Other languages
Japanese (ja)
Other versions
JPS5324915B2 (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4851874A publication Critical patent/JPS4851874A/ja
Publication of JPS5324915B2 publication Critical patent/JPS5324915B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP10756672A 1971-10-27 1972-10-26 Expired JPS5324915B2 (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19295771A 1971-10-27 1971-10-27

Publications (2)

Publication Number Publication Date
JPS4851874A true JPS4851874A (nl) 1973-07-20
JPS5324915B2 JPS5324915B2 (nl) 1978-07-24

Family

ID=22711718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10756672A Expired JPS5324915B2 (nl) 1971-10-27 1972-10-26

Country Status (4)

Country Link
US (1) US3757733A (nl)
JP (1) JPS5324915B2 (nl)
DE (1) DE2251571C3 (nl)
GB (1) GB1408056A (nl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52150790A (en) * 1976-06-10 1977-12-14 Univ Sydney Process and apparatus for reactionary vacuum evaporation
WO2008105365A1 (ja) * 2007-02-28 2008-09-04 Ulvac, Inc. 成膜装置及び成膜方法

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4066037A (en) * 1975-12-17 1978-01-03 Lfe Corportion Apparatus for depositing dielectric films using a glow discharge
USRE30244E (en) * 1976-01-22 1980-04-01 Bell Telephone Laboratories, Incorporated Radial flow reactor including glow discharge limitting shield
US4142004A (en) * 1976-01-22 1979-02-27 Bell Telephone Laboratories, Incorporated Method of coating semiconductor substrates
US4033287A (en) * 1976-01-22 1977-07-05 Bell Telephone Laboratories, Incorporated Radial flow reactor including glow discharge limiting shield
GB1544172A (en) * 1976-03-03 1979-04-11 Int Plasma Corp Gas plasma reactor and process
US4132818A (en) * 1976-06-29 1979-01-02 International Business Machines Corporation Method of forming deposits from reactive gases
CA1059882A (en) * 1976-08-16 1979-08-07 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
US4182646A (en) * 1978-07-27 1980-01-08 John Zajac Process of etching with plasma etch gas
US4230515A (en) * 1978-07-27 1980-10-28 Davis & Wilder, Inc. Plasma etching apparatus
US4207137A (en) * 1979-04-13 1980-06-10 Bell Telephone Laboratories, Incorporated Method of controlling a plasma etching process by monitoring the impedance changes of the RF power
US4262631A (en) * 1979-10-01 1981-04-21 Kubacki Ronald M Thin film deposition apparatus using an RF glow discharge
US4289797A (en) * 1979-10-11 1981-09-15 Western Electric Co., Incorporated Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor
JPS5673539A (en) * 1979-11-22 1981-06-18 Toshiba Corp Surface treating apparatus of microwave plasma
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
JPS56105483A (en) * 1980-01-25 1981-08-21 Mitsubishi Electric Corp Dry etching device
US4275289A (en) * 1980-02-04 1981-06-23 Western Electric Company, Inc. Uniformly cooled plasma etching electrode
US4361749A (en) * 1980-02-04 1982-11-30 Western Electric Co., Inc. Uniformly cooled plasma etching electrode
DD153497A3 (de) * 1980-02-08 1982-01-13 Georg Rudakoff Verfahren und vorrichtung zum plasmaaetzen oder zur plasma cvd
DE3175576D1 (en) * 1980-12-11 1986-12-11 Toshiba Kk Dry etching device and method
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
DE3272669D1 (en) * 1982-03-18 1986-09-25 Ibm Deutschland Plasma-reactor and its use in etching and coating substrates
US4686111A (en) * 1982-05-27 1987-08-11 Motorola, Inc. Passivated and low scatter acoustic wave devices and method thereof
JPS591671A (ja) * 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
US4483883A (en) * 1982-12-22 1984-11-20 Energy Conversion Devices, Inc. Upstream cathode assembly
US4585668A (en) * 1983-02-28 1986-04-29 Michigan State University Method for treating a surface with a microwave or UHF plasma and improved apparatus
US4534826A (en) * 1983-12-29 1985-08-13 Ibm Corporation Trench etch process for dielectric isolation
JPS60191269A (ja) * 1984-03-13 1985-09-28 Sharp Corp 電子写真感光体製造装置
US4630566A (en) * 1984-08-16 1986-12-23 Board Of Trustees Operating Michigan State University Microwave or UHF plasma improved apparatus
US4657620A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Automated single slice powered load lock plasma reactor
US4657621A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Low particulate vacuum chamber input/output valve
US4654106A (en) * 1984-10-22 1987-03-31 Texas Instruments Incorporated Automated plasma reactor
US4657617A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Anodized aluminum substrate for plasma etch reactor
US4657618A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Powered load lock electrode/substrate assembly including robot arm, optimized for plasma process uniformity and rate
US4661196A (en) * 1984-10-22 1987-04-28 Texas Instruments Incorporated Plasma etch movable substrate
US4659413A (en) * 1984-10-24 1987-04-21 Texas Instruments Incorporated Automated single slice cassette load lock plasma reactor
US4603056A (en) * 1985-04-25 1986-07-29 International Business Machines Corporation Surface treatment of a molybdenum screening mask
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4708766A (en) * 1986-11-07 1987-11-24 Texas Instruments Incorporated Hydrogen iodide etch of tin oxide
US4807004A (en) * 1986-11-26 1989-02-21 Texas Instruments Incorporated Tin oxide CCD imager
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US4885074A (en) * 1987-02-24 1989-12-05 International Business Machines Corporation Plasma reactor having segmented electrodes
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
DD271776A1 (de) * 1988-05-06 1989-09-13 Elektromat Veb Vorrichtung zur gaszufuehrung und -ableitung fuer die gasphasenbearbeitung von werkstuecken
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
DE4140158A1 (de) * 1991-12-05 1993-06-09 Krupp Widia Gmbh, 4300 Essen, De Verfahren und vorrichtung zur hartstoffbeschichtung von substratkoerpern
JPH05243160A (ja) * 1992-02-28 1993-09-21 Nec Yamagata Ltd 半導体デバイス製造用プラズマｃｖｄ装置
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
KR100268432B1 (ko) * 1998-09-05 2000-11-01 윤종용 플라즈마 에칭을 위한 장치
WO2002024985A1 (de) * 2000-09-22 2002-03-28 Aixtron Ag Gaseinlassorgan für cvd-verfahren und vorrichtung
DE10153463A1 (de) * 2001-10-30 2003-05-15 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
DE10157946A1 (de) * 2001-11-27 2003-06-05 Osram Opto Semiconductors Gmbh Vorrichtung und Verfahren zum Wachsen von Schichten auf ein Substrat
JP3791432B2 (ja) * 2002-02-27 2006-06-28 住友電気工業株式会社 半導体製造用加熱装置
TWI220786B (en) * 2002-09-11 2004-09-01 Au Optronics Corp Supporting structure
DE10320597A1 (de) 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
US20050011459A1 (en) * 2003-07-15 2005-01-20 Heng Liu Chemical vapor deposition reactor
KR100534209B1 (ko) * 2003-07-29 2005-12-08 삼성전자주식회사 반도체소자 제조용 화학기상증착 공정설비
US6995545B2 (en) * 2003-08-18 2006-02-07 Mks Instruments, Inc. Control system for a sputtering system
KR100782380B1 (ko) * 2005-01-24 2007-12-07 삼성전자주식회사 반도체 제조장치
US7897495B2 (en) * 2006-12-12 2011-03-01 Applied Materials, Inc. Formation of epitaxial layer containing silicon and carbon
US9064960B2 (en) * 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
US8216419B2 (en) * 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
US20090096349A1 (en) * 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
US8668775B2 (en) * 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
US8298338B2 (en) * 2007-12-26 2012-10-30 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus
KR101004822B1 (ko) * 2008-04-18 2010-12-28 삼성엘이디 주식회사 화학 기상 증착 장치
KR100982987B1 (ko) * 2008-04-18 2010-09-17 삼성엘이디 주식회사 화학 기상 증착 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2580131A (en) * 1947-02-25 1951-12-25 Chandler & Price Co Method and apparatus for coating a lithographic plate
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
CH409694A (de) * 1962-11-06 1966-03-15 Berghaus Elektrophysik Anst Verfahren zur Behandlung von Teilen eines Kugelschreibers
US3309221A (en) * 1963-03-25 1967-03-14 Minnesota Mining & Mfg Surface activation of passive polymers and articles produced thereby
GB1136218A (en) * 1965-12-14 1968-12-11 Standard Telephones Cables Ltd Improvements in or relating to the manufacture of semiconductor optical devices
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
US3329601A (en) * 1964-09-15 1967-07-04 Donald M Mattox Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial
US3364833A (en) * 1965-02-03 1968-01-23 Ibm Wash ammonia development device
US3323436A (en) * 1965-03-17 1967-06-06 Ibm Method and apparatus for development of film
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method
US3408982A (en) * 1966-08-25 1968-11-05 Emil R. Capita Vapor plating apparatus including rotatable substrate support
DE1621358A1 (de) * 1966-11-08 1971-04-29 Texas Instruments Inc Verfahren zur Aufbringung duenner Filme aus dielektrischem Material auf ein Substrat
US3594227A (en) * 1968-07-12 1971-07-20 Bell Telephone Labor Inc Method for treating semiconductor slices with gases
JPS4930319B1 (nl) * 1969-08-29 1974-08-12
US3696779A (en) * 1969-12-29 1972-10-10 Kokusai Electric Co Ltd Vapor growth device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52150790A (en) * 1976-06-10 1977-12-14 Univ Sydney Process and apparatus for reactionary vacuum evaporation
JPS572272B2 (nl) * 1976-06-10 1982-01-14
WO2008105365A1 (ja) * 2007-02-28 2008-09-04 Ulvac, Inc. 成膜装置及び成膜方法
JP5091943B2 (ja) * 2007-02-28 2012-12-05 株式会社アルバック 成膜装置及び成膜方法

Also Published As

Publication number Publication date
GB1408056A (en) 1975-10-01
DE2251571C3 (de) 1985-05-15
JPS5324915B2 (nl) 1978-07-24
DE2251571B2 (de) 1979-10-31
US3757733A (en) 1973-09-11
DE2251571A1 (de) 1973-05-03

Similar Documents

Publication Publication Date Title
JPS5324915B2 (nl)
ATA136472A (nl)
AR196074A1 (nl)
BE776170A (nl)
AU2742671A (nl)
AU2894671A (nl)
AU2941471A (nl)
AU2952271A (nl)
AU3005371A (nl)
AU2927871A (nl)
AU2455871A (nl)
AU1109576A (nl)
AU2706571A (nl)
AU2724971A (nl)
AU2726271A (nl)
AU2740271A (nl)
AU2473671A (nl)
AU2755871A (nl)
AU2836771A (nl)
AU2837671A (nl)
AU2854371A (nl)
AU2456871A (nl)
AR199640Q (nl)
AR202997Q (nl)
AU2875571A (nl)