WO2008105365A1 - 成膜装置及び成膜方法 - Google Patents

成膜装置及び成膜方法 Download PDF

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Publication number
WO2008105365A1
WO2008105365A1 PCT/JP2008/053177 JP2008053177W WO2008105365A1 WO 2008105365 A1 WO2008105365 A1 WO 2008105365A1 JP 2008053177 W JP2008053177 W JP 2008053177W WO 2008105365 A1 WO2008105365 A1 WO 2008105365A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
substrate
forming
sputtering
forming apparatus
Prior art date
Application number
PCT/JP2008/053177
Other languages
English (en)
French (fr)
Inventor
Hajime Nakamura
Hiroyasu Arima
Shunichi Imamura
Kazuya Saito
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to KR1020097018186A priority Critical patent/KR101110855B1/ko
Priority to CN2008800062458A priority patent/CN101631891B/zh
Priority to US12/528,876 priority patent/US20100288625A1/en
Priority to DE112008000544T priority patent/DE112008000544B4/de
Priority to JP2009501226A priority patent/JP5091943B2/ja
Publication of WO2008105365A1 publication Critical patent/WO2008105365A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

　スパッタ成膜室内に保持された基板の表面に、反応性スパッタ法により化合物薄膜を成膜する装置であって、前記スパッタ成膜室に、前記基板の表面に成膜される化合物薄膜の膜質を調整する膜質調整用ガスを前記基板の裏面に導入する第１の膜質調整用ガス導入手段を備える。
PCT/JP2008/053177 2007-02-28 2008-02-25 成膜装置及び成膜方法 WO2008105365A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097018186A KR101110855B1 (ko) 2007-02-28 2008-02-25 성막장치 및 성막방법
CN2008800062458A CN101631891B (zh) 2007-02-28 2008-02-25 成膜装置和成膜方法
US12/528,876 US20100288625A1 (en) 2007-02-28 2008-02-25 Film deposition apparatus and film deposition method
DE112008000544T DE112008000544B4 (de) 2007-02-28 2008-02-25 Schichtabscheidevorrichtung und Schichtabscheideverfahren
JP2009501226A JP5091943B2 (ja) 2007-02-28 2008-02-25 成膜装置及び成膜方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007050646 2007-02-28
JP2007-050646 2007-02-28

Publications (1)

Publication Number Publication Date
WO2008105365A1 true WO2008105365A1 (ja) 2008-09-04

Family

ID=39721197

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053177 WO2008105365A1 (ja) 2007-02-28 2008-02-25 成膜装置及び成膜方法

Country Status (7)

Country Link
US (1) US20100288625A1 (ja)
JP (1) JP5091943B2 (ja)
KR (1) KR101110855B1 (ja)
CN (1) CN101631891B (ja)
DE (2) DE112008004261A5 (ja)
TW (1) TWI463025B (ja)
WO (1) WO2008105365A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017050350A1 (en) * 2015-09-21 2017-03-30 Applied Materials, Inc. Substrate carrier, and sputter deposition apparatus and method using the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4851874A (ja) * 1971-10-27 1973-07-20
JPH0644836A (ja) * 1992-07-22 1994-02-18 Tonen Corp 透明導電薄膜の製造方法および装置
JPH06116722A (ja) * 1992-10-07 1994-04-26 Canon Inc スパッタリング方法，スパッタリング装置，真空処理装置および熱電対
JPH07197249A (ja) * 1994-01-10 1995-08-01 Mitsubishi Electric Corp 薄膜形成装置および方法
JP2002060938A (ja) * 2000-08-18 2002-02-28 Murata Mfg Co Ltd インライン式スパッタ装置
JP2003013218A (ja) * 2001-06-29 2003-01-15 Canon Inc 長時間スパッタリング方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01309960A (ja) * 1988-06-08 1989-12-14 Ulvac Corp 光磁気ディスク用インライン式スパッタリング装置
US6083321A (en) * 1997-07-11 2000-07-04 Applied Materials, Inc. Fluid delivery system and method
JP2000129436A (ja) * 1998-08-19 2000-05-09 Asahi Glass Co Ltd インライン型スパッタリング装置およびスパッタリング方法
US6660365B1 (en) * 1998-12-21 2003-12-09 Cardinal Cg Company Soil-resistant coating for glass surfaces
JP4493284B2 (ja) * 2003-05-26 2010-06-30 キヤノンアネルバ株式会社 スパッタリング装置
KR101083110B1 (ko) * 2004-08-30 2011-11-11 엘지디스플레이 주식회사 가스 분사 어셈블리를 구비한 스퍼터링 장비
JP5010122B2 (ja) 2005-08-19 2012-08-29 株式会社アルテコ 中空タイヤ
EP1840936A1 (de) * 2006-03-29 2007-10-03 Applied Materials GmbH & Co. KG Sputterkammer zum Beschichten eines Substrats

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4851874A (ja) * 1971-10-27 1973-07-20
JPH0644836A (ja) * 1992-07-22 1994-02-18 Tonen Corp 透明導電薄膜の製造方法および装置
JPH06116722A (ja) * 1992-10-07 1994-04-26 Canon Inc スパッタリング方法，スパッタリング装置，真空処理装置および熱電対
JPH07197249A (ja) * 1994-01-10 1995-08-01 Mitsubishi Electric Corp 薄膜形成装置および方法
JP2002060938A (ja) * 2000-08-18 2002-02-28 Murata Mfg Co Ltd インライン式スパッタ装置
JP2003013218A (ja) * 2001-06-29 2003-01-15 Canon Inc 長時間スパッタリング方法

Also Published As

Publication number Publication date
US20100288625A1 (en) 2010-11-18
TW200848534A (en) 2008-12-16
TWI463025B (zh) 2014-12-01
CN101631891A (zh) 2010-01-20
KR101110855B1 (ko) 2012-03-22
DE112008000544B4 (de) 2013-02-28
DE112008004261A5 (de) 2012-12-13
DE112008000544T5 (de) 2009-12-31
KR20090106648A (ko) 2009-10-09
CN101631891B (zh) 2011-11-16
JPWO2008105365A1 (ja) 2010-06-03
JP5091943B2 (ja) 2012-12-05

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