WO2009145492A3 - 마그네트론 스퍼터링에 의한 후막제조방법 - Google Patents
마그네트론 스퍼터링에 의한 후막제조방법 Download PDFInfo
- Publication number
- WO2009145492A3 WO2009145492A3 PCT/KR2009/001730 KR2009001730W WO2009145492A3 WO 2009145492 A3 WO2009145492 A3 WO 2009145492A3 KR 2009001730 W KR2009001730 W KR 2009001730W WO 2009145492 A3 WO2009145492 A3 WO 2009145492A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thick film
- fabrication process
- magnetron sputtering
- thin film
- film
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/935,612 US20110017588A1 (en) | 2008-04-03 | 2009-04-03 | Fabrication process for a thick film by magnetron sputtering |
JP2011502861A JP2011516729A (ja) | 2008-04-03 | 2009-04-03 | マグネトロンスパッタリングによる厚膜の製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0031268 | 2008-04-03 | ||
KR1020080031268A KR100885664B1 (ko) | 2008-04-03 | 2008-04-03 | 고속/고밀도 마그네트론 스퍼터링 법을 이용한 후막제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009145492A2 WO2009145492A2 (ko) | 2009-12-03 |
WO2009145492A3 true WO2009145492A3 (ko) | 2010-01-21 |
Family
ID=40682127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/001730 WO2009145492A2 (ko) | 2008-04-03 | 2009-04-03 | 마그네트론 스퍼터링에 의한 후막제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110017588A1 (ko) |
JP (1) | JP2011516729A (ko) |
KR (1) | KR100885664B1 (ko) |
WO (1) | WO2009145492A2 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101096114B1 (ko) | 2009-12-28 | 2011-12-19 | 주식회사 코리아 인스트루먼트 | 일체형 전력 반도체 모듈 기판의 제조방법 |
KR20110085609A (ko) * | 2010-01-21 | 2011-07-27 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR101200302B1 (ko) | 2010-07-30 | 2012-11-12 | (주)포러스텍 | 간헐적 스퍼터링을 이용한 고저항 금속박막 제조방법 |
KR102269136B1 (ko) | 2014-11-24 | 2021-06-25 | 삼성디스플레이 주식회사 | 증착용 마스크와, 이를 제조하는 방법 |
JP7292695B2 (ja) * | 2016-08-17 | 2023-06-19 | 地方独立行政法人東京都立産業技術研究センター | 機能性薄膜、その製造方法、積層構造体及びその製造方法 |
CN108251806A (zh) * | 2017-12-28 | 2018-07-06 | 上海佑戈金属科技有限公司 | 光亮彩色不锈钢带的制造方法及其光亮彩色不锈钢带 |
CN112011779B (zh) * | 2019-05-30 | 2022-09-23 | 兰州空间技术物理研究所 | 一种真空磁控溅射卷绕镀制低残余应力厚铜膜的方法 |
KR102096787B1 (ko) | 2019-06-11 | 2020-04-03 | 주식회사 바이테크 | 다층 구조의 다결정 탄화규소 성형체의 제조방법 |
KR20200142137A (ko) * | 2019-06-11 | 2020-12-22 | 주식회사 포엠비 | 저유전율을 가지는 불소계 기판 및 그의 제조 방법 |
KR102239162B1 (ko) * | 2019-06-24 | 2021-04-12 | 주식회사 브라이튼 | 의료용 공구 및 그 제조방법 |
CN112921285A (zh) * | 2019-12-05 | 2021-06-08 | 比亚迪股份有限公司 | 渐变色镀膜基板及其制备方法、电子产品外壳、电子装置 |
KR102188258B1 (ko) | 2020-04-27 | 2020-12-09 | 주식회사 바이테크 | 일체형 다층 구조의 다결정 탄화규소 성형체 제조방법과 다결정 탄화규소 성형체 및 플라즈마 공정장비용 샤워헤드 |
KR102430218B1 (ko) * | 2020-10-20 | 2022-08-11 | 한국전자기술연구원 | AlN(질화알루미늄) 박막 증착 방법 |
CN114322740A (zh) * | 2021-12-03 | 2022-04-12 | 电子科技大学长三角研究院(湖州) | 一种基于磁控溅射的复合薄膜应变计及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1121669A (ja) * | 1997-07-02 | 1999-01-26 | Ulvac Japan Ltd | シリコン半導体に於ける化合物バリア膜形成方法 |
JP2005298833A (ja) * | 2002-10-22 | 2005-10-27 | Asahi Glass Co Ltd | 多層膜付き基板とその製造方法 |
JP2007053373A (ja) * | 2005-08-12 | 2007-03-01 | Samsung Electronics Co Ltd | 単結晶窒化物系半導体基板及びこれを用いた高品質の窒化物系発光素子製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4869714A (en) * | 1986-02-13 | 1989-09-26 | California Institute Of Technology | Luminal surface fabrication for cardiovascular prostheses |
US5022977A (en) * | 1986-09-29 | 1991-06-11 | Nippon Telegraph And Telephone Corporation | Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus |
JPH07161637A (ja) * | 1988-01-26 | 1995-06-23 | Toshiba Corp | 膜のスパッタリング形成方法 |
JPH0353539A (ja) * | 1989-07-21 | 1991-03-07 | Hitachi Ltd | 半田接続用端子 |
JPH07235420A (ja) * | 1994-02-22 | 1995-09-05 | Nippon Telegr & Teleph Corp <Ntt> | Fe−Rh磁性薄膜及びその作製方法 |
JPH11258406A (ja) * | 1998-03-13 | 1999-09-24 | Toppan Printing Co Ltd | 反射防止膜 |
JP2000001776A (ja) * | 1998-06-18 | 2000-01-07 | Matsushita Electric Ind Co Ltd | スパッタリング装置および薄膜形成方法 |
KR20000073343A (ko) * | 1999-05-10 | 2000-12-05 | 김영환 | 반도체 장치의 배선구조 |
JP2002280171A (ja) * | 2001-03-15 | 2002-09-27 | Canon Inc | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP2008101916A (ja) * | 2006-10-17 | 2008-05-01 | Canon Inc | 多層膜光学素子 |
KR100888145B1 (ko) * | 2007-02-22 | 2009-03-13 | 성균관대학교산학협력단 | 무응력 연성회로기판 제조 장치 및 방법 |
-
2008
- 2008-04-03 KR KR1020080031268A patent/KR100885664B1/ko active IP Right Grant
-
2009
- 2009-04-03 US US12/935,612 patent/US20110017588A1/en not_active Abandoned
- 2009-04-03 WO PCT/KR2009/001730 patent/WO2009145492A2/ko active Application Filing
- 2009-04-03 JP JP2011502861A patent/JP2011516729A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1121669A (ja) * | 1997-07-02 | 1999-01-26 | Ulvac Japan Ltd | シリコン半導体に於ける化合物バリア膜形成方法 |
JP2005298833A (ja) * | 2002-10-22 | 2005-10-27 | Asahi Glass Co Ltd | 多層膜付き基板とその製造方法 |
JP2007053373A (ja) * | 2005-08-12 | 2007-03-01 | Samsung Electronics Co Ltd | 単結晶窒化物系半導体基板及びこれを用いた高品質の窒化物系発光素子製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2009145492A2 (ko) | 2009-12-03 |
KR100885664B1 (ko) | 2009-02-25 |
US20110017588A1 (en) | 2011-01-27 |
JP2011516729A (ja) | 2011-05-26 |
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