JPS4851874A - - Google Patents

Info

Publication number
JPS4851874A
JPS4851874A JP10756672A JP10756672A JPS4851874A JP S4851874 A JPS4851874 A JP S4851874A JP 10756672 A JP10756672 A JP 10756672A JP 10756672 A JP10756672 A JP 10756672A JP S4851874 A JPS4851874 A JP S4851874A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10756672A
Other languages
Japanese (ja)
Other versions
JPS5324915B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4851874A publication Critical patent/JPS4851874A/ja
Publication of JPS5324915B2 publication Critical patent/JPS5324915B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
JP10756672A 1971-10-27 1972-10-26 Expired JPS5324915B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19295771A 1971-10-27 1971-10-27

Publications (2)

Publication Number Publication Date
JPS4851874A true JPS4851874A (enrdf_load_stackoverflow) 1973-07-20
JPS5324915B2 JPS5324915B2 (enrdf_load_stackoverflow) 1978-07-24

Family

ID=22711718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10756672A Expired JPS5324915B2 (enrdf_load_stackoverflow) 1971-10-27 1972-10-26

Country Status (4)

Country Link
US (1) US3757733A (enrdf_load_stackoverflow)
JP (1) JPS5324915B2 (enrdf_load_stackoverflow)
DE (1) DE2251571C3 (enrdf_load_stackoverflow)
GB (1) GB1408056A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52150790A (en) * 1976-06-10 1977-12-14 Univ Sydney Process and apparatus for reactionary vacuum evaporation
WO2008105365A1 (ja) * 2007-02-28 2008-09-04 Ulvac, Inc. 成膜装置及び成膜方法

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4066037A (en) * 1975-12-17 1978-01-03 Lfe Corportion Apparatus for depositing dielectric films using a glow discharge
USRE30244E (en) * 1976-01-22 1980-04-01 Bell Telephone Laboratories, Incorporated Radial flow reactor including glow discharge limitting shield
US4142004A (en) * 1976-01-22 1979-02-27 Bell Telephone Laboratories, Incorporated Method of coating semiconductor substrates
US4033287A (en) * 1976-01-22 1977-07-05 Bell Telephone Laboratories, Incorporated Radial flow reactor including glow discharge limiting shield
GB1544172A (en) * 1976-03-03 1979-04-11 Int Plasma Corp Gas plasma reactor and process
US4132818A (en) * 1976-06-29 1979-01-02 International Business Machines Corporation Method of forming deposits from reactive gases
CA1059882A (en) * 1976-08-16 1979-08-07 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
US4230515A (en) * 1978-07-27 1980-10-28 Davis & Wilder, Inc. Plasma etching apparatus
US4182646A (en) * 1978-07-27 1980-01-08 John Zajac Process of etching with plasma etch gas
US4207137A (en) * 1979-04-13 1980-06-10 Bell Telephone Laboratories, Incorporated Method of controlling a plasma etching process by monitoring the impedance changes of the RF power
US4262631A (en) * 1979-10-01 1981-04-21 Kubacki Ronald M Thin film deposition apparatus using an RF glow discharge
US4289797A (en) * 1979-10-11 1981-09-15 Western Electric Co., Incorporated Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor
JPS5673539A (en) * 1979-11-22 1981-06-18 Toshiba Corp Surface treating apparatus of microwave plasma
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
JPS56105483A (en) * 1980-01-25 1981-08-21 Mitsubishi Electric Corp Dry etching device
US4361749A (en) * 1980-02-04 1982-11-30 Western Electric Co., Inc. Uniformly cooled plasma etching electrode
US4275289A (en) * 1980-02-04 1981-06-23 Western Electric Company, Inc. Uniformly cooled plasma etching electrode
DD153497A3 (de) * 1980-02-08 1982-01-13 Georg Rudakoff Verfahren und vorrichtung zum plasmaaetzen oder zur plasma cvd
DE3175576D1 (en) * 1980-12-11 1986-12-11 Toshiba Kk Dry etching device and method
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
DE3272669D1 (en) * 1982-03-18 1986-09-25 Ibm Deutschland Plasma-reactor and its use in etching and coating substrates
US4686111A (en) * 1982-05-27 1987-08-11 Motorola, Inc. Passivated and low scatter acoustic wave devices and method thereof
JPS591671A (ja) * 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
US4483883A (en) * 1982-12-22 1984-11-20 Energy Conversion Devices, Inc. Upstream cathode assembly
US4585668A (en) * 1983-02-28 1986-04-29 Michigan State University Method for treating a surface with a microwave or UHF plasma and improved apparatus
US4534826A (en) * 1983-12-29 1985-08-13 Ibm Corporation Trench etch process for dielectric isolation
JPS60191269A (ja) * 1984-03-13 1985-09-28 Sharp Corp 電子写真感光体製造装置
US4630566A (en) * 1984-08-16 1986-12-23 Board Of Trustees Operating Michigan State University Microwave or UHF plasma improved apparatus
US4661196A (en) * 1984-10-22 1987-04-28 Texas Instruments Incorporated Plasma etch movable substrate
US4657621A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Low particulate vacuum chamber input/output valve
US4657617A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Anodized aluminum substrate for plasma etch reactor
US4657618A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Powered load lock electrode/substrate assembly including robot arm, optimized for plasma process uniformity and rate
US4654106A (en) * 1984-10-22 1987-03-31 Texas Instruments Incorporated Automated plasma reactor
US4657620A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Automated single slice powered load lock plasma reactor
US4659413A (en) * 1984-10-24 1987-04-21 Texas Instruments Incorporated Automated single slice cassette load lock plasma reactor
US4603056A (en) * 1985-04-25 1986-07-29 International Business Machines Corporation Surface treatment of a molybdenum screening mask
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4708766A (en) * 1986-11-07 1987-11-24 Texas Instruments Incorporated Hydrogen iodide etch of tin oxide
US4807004A (en) * 1986-11-26 1989-02-21 Texas Instruments Incorporated Tin oxide CCD imager
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US4885074A (en) * 1987-02-24 1989-12-05 International Business Machines Corporation Plasma reactor having segmented electrodes
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
DD271776A1 (de) * 1988-05-06 1989-09-13 Elektromat Veb Vorrichtung zur gaszufuehrung und -ableitung fuer die gasphasenbearbeitung von werkstuecken
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
DE4140158A1 (de) * 1991-12-05 1993-06-09 Krupp Widia Gmbh, 4300 Essen, De Verfahren und vorrichtung zur hartstoffbeschichtung von substratkoerpern
JPH05243160A (ja) * 1992-02-28 1993-09-21 Nec Yamagata Ltd 半導体デバイス製造用プラズマｃｖｄ装置
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
KR100268432B1 (ko) * 1998-09-05 2000-11-01 윤종용 플라즈마 에칭을 위한 장치
EP1322801B1 (de) * 2000-09-22 2010-01-06 Aixtron Ag Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens
DE10153463A1 (de) * 2001-10-30 2003-05-15 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
DE10157946A1 (de) * 2001-11-27 2003-06-05 Osram Opto Semiconductors Gmbh Vorrichtung und Verfahren zum Wachsen von Schichten auf ein Substrat
JP3791432B2 (ja) * 2002-02-27 2006-06-28 住友電気工業株式会社 半導体製造用加熱装置
TWI220786B (en) * 2002-09-11 2004-09-01 Au Optronics Corp Supporting structure
DE10320597A1 (de) 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
US20050011459A1 (en) * 2003-07-15 2005-01-20 Heng Liu Chemical vapor deposition reactor
KR100534209B1 (ko) * 2003-07-29 2005-12-08 삼성전자주식회사 반도체소자 제조용 화학기상증착 공정설비
US6995545B2 (en) * 2003-08-18 2006-02-07 Mks Instruments, Inc. Control system for a sputtering system
KR100782380B1 (ko) * 2005-01-24 2007-12-07 삼성전자주식회사 반도체 제조장치
US7897495B2 (en) * 2006-12-12 2011-03-01 Applied Materials, Inc. Formation of epitaxial layer containing silicon and carbon
US9064960B2 (en) * 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
US20090096349A1 (en) * 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
US8216419B2 (en) * 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
US8668775B2 (en) * 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
US8298338B2 (en) * 2007-12-26 2012-10-30 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus
KR101004822B1 (ko) * 2008-04-18 2010-12-28 삼성엘이디 주식회사 화학 기상 증착 장치
KR100982987B1 (ko) * 2008-04-18 2010-09-17 삼성엘이디 주식회사 화학 기상 증착 장치
JP6925548B1 (ja) * 2020-07-08 2021-08-25 信越化学工業株式会社 酸化ガリウム半導体膜の製造方法及び成膜装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2580131A (en) * 1947-02-25 1951-12-25 Chandler & Price Co Method and apparatus for coating a lithographic plate
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
CH409694A (de) * 1962-11-06 1966-03-15 Berghaus Elektrophysik Anst Verfahren zur Behandlung von Teilen eines Kugelschreibers
US3309221A (en) * 1963-03-25 1967-03-14 Minnesota Mining & Mfg Surface activation of passive polymers and articles produced thereby
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
GB1136218A (en) * 1965-12-14 1968-12-11 Standard Telephones Cables Ltd Improvements in or relating to the manufacture of semiconductor optical devices
US3329601A (en) * 1964-09-15 1967-07-04 Donald M Mattox Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial
US3364833A (en) * 1965-02-03 1968-01-23 Ibm Wash ammonia development device
US3323436A (en) * 1965-03-17 1967-06-06 Ibm Method and apparatus for development of film
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method
US3408982A (en) * 1966-08-25 1968-11-05 Emil R. Capita Vapor plating apparatus including rotatable substrate support
DE1621358A1 (de) * 1966-11-08 1971-04-29 Texas Instruments Inc Verfahren zur Aufbringung duenner Filme aus dielektrischem Material auf ein Substrat
US3594227A (en) * 1968-07-12 1971-07-20 Bell Telephone Labor Inc Method for treating semiconductor slices with gases
JPS4930319B1 (enrdf_load_stackoverflow) * 1969-08-29 1974-08-12
US3696779A (en) * 1969-12-29 1972-10-10 Kokusai Electric Co Ltd Vapor growth device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52150790A (en) * 1976-06-10 1977-12-14 Univ Sydney Process and apparatus for reactionary vacuum evaporation
WO2008105365A1 (ja) * 2007-02-28 2008-09-04 Ulvac, Inc. 成膜装置及び成膜方法
JP5091943B2 (ja) * 2007-02-28 2012-12-05 株式会社アルバック 成膜装置及び成膜方法

Also Published As

Publication number Publication date
US3757733A (en) 1973-09-11
DE2251571C3 (de) 1985-05-15
DE2251571A1 (de) 1973-05-03
DE2251571B2 (de) 1979-10-31
GB1408056A (en) 1975-10-01
JPS5324915B2 (enrdf_load_stackoverflow) 1978-07-24

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