JPS4851874A - - Google Patents
Info
- Publication number
- JPS4851874A JPS4851874A JP10756672A JP10756672A JPS4851874A JP S4851874 A JPS4851874 A JP S4851874A JP 10756672 A JP10756672 A JP 10756672A JP 10756672 A JP10756672 A JP 10756672A JP S4851874 A JPS4851874 A JP S4851874A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Fluid Mechanics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19295771A | 1971-10-27 | 1971-10-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4851874A true JPS4851874A (cs) | 1973-07-20 |
JPS5324915B2 JPS5324915B2 (cs) | 1978-07-24 |
Family
ID=22711718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10756672A Expired JPS5324915B2 (cs) | 1971-10-27 | 1972-10-26 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3757733A (cs) |
JP (1) | JPS5324915B2 (cs) |
DE (1) | DE2251571C3 (cs) |
GB (1) | GB1408056A (cs) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52150790A (en) * | 1976-06-10 | 1977-12-14 | Univ Sydney | Process and apparatus for reactionary vacuum evaporation |
WO2008105365A1 (ja) * | 2007-02-28 | 2008-09-04 | Ulvac, Inc. | 成膜装置及び成膜方法 |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4066037A (en) * | 1975-12-17 | 1978-01-03 | Lfe Corportion | Apparatus for depositing dielectric films using a glow discharge |
US4033287A (en) * | 1976-01-22 | 1977-07-05 | Bell Telephone Laboratories, Incorporated | Radial flow reactor including glow discharge limiting shield |
US4142004A (en) * | 1976-01-22 | 1979-02-27 | Bell Telephone Laboratories, Incorporated | Method of coating semiconductor substrates |
USRE30244E (en) * | 1976-01-22 | 1980-04-01 | Bell Telephone Laboratories, Incorporated | Radial flow reactor including glow discharge limitting shield |
GB1544172A (en) * | 1976-03-03 | 1979-04-11 | Int Plasma Corp | Gas plasma reactor and process |
US4132818A (en) * | 1976-06-29 | 1979-01-02 | International Business Machines Corporation | Method of forming deposits from reactive gases |
CA1059882A (en) * | 1976-08-16 | 1979-08-07 | Northern Telecom Limited | Gaseous plasma etching of aluminum and aluminum oxide |
US4230515A (en) * | 1978-07-27 | 1980-10-28 | Davis & Wilder, Inc. | Plasma etching apparatus |
US4182646A (en) * | 1978-07-27 | 1980-01-08 | John Zajac | Process of etching with plasma etch gas |
US4207137A (en) * | 1979-04-13 | 1980-06-10 | Bell Telephone Laboratories, Incorporated | Method of controlling a plasma etching process by monitoring the impedance changes of the RF power |
US4262631A (en) * | 1979-10-01 | 1981-04-21 | Kubacki Ronald M | Thin film deposition apparatus using an RF glow discharge |
US4289797A (en) * | 1979-10-11 | 1981-09-15 | Western Electric Co., Incorporated | Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor |
JPS5673539A (en) * | 1979-11-22 | 1981-06-18 | Toshiba Corp | Surface treating apparatus of microwave plasma |
US4333814A (en) * | 1979-12-26 | 1982-06-08 | Western Electric Company, Inc. | Methods and apparatus for improving an RF excited reactive gas plasma |
JPS56105483A (en) * | 1980-01-25 | 1981-08-21 | Mitsubishi Electric Corp | Dry etching device |
US4361749A (en) * | 1980-02-04 | 1982-11-30 | Western Electric Co., Inc. | Uniformly cooled plasma etching electrode |
US4275289A (en) * | 1980-02-04 | 1981-06-23 | Western Electric Company, Inc. | Uniformly cooled plasma etching electrode |
DD153497A3 (de) * | 1980-02-08 | 1982-01-13 | Georg Rudakoff | Verfahren und vorrichtung zum plasmaaetzen oder zur plasma cvd |
EP0054201B1 (en) * | 1980-12-11 | 1986-11-05 | Kabushiki Kaisha Toshiba | Dry etching device and method |
US4421786A (en) * | 1981-01-23 | 1983-12-20 | Western Electric Co. | Chemical vapor deposition reactor for silicon epitaxial processes |
EP0089382B1 (de) * | 1982-03-18 | 1986-08-20 | Ibm Deutschland Gmbh | Plasmareaktor und seine Anwendung beim Ätzen und Beschichten von Substraten |
US4686111A (en) * | 1982-05-27 | 1987-08-11 | Motorola, Inc. | Passivated and low scatter acoustic wave devices and method thereof |
JPS591671A (ja) * | 1982-05-28 | 1984-01-07 | Fujitsu Ltd | プラズマcvd装置 |
US4483883A (en) * | 1982-12-22 | 1984-11-20 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
US4585668A (en) * | 1983-02-28 | 1986-04-29 | Michigan State University | Method for treating a surface with a microwave or UHF plasma and improved apparatus |
US4534826A (en) * | 1983-12-29 | 1985-08-13 | Ibm Corporation | Trench etch process for dielectric isolation |
JPS60191269A (ja) * | 1984-03-13 | 1985-09-28 | Sharp Corp | 電子写真感光体製造装置 |
US4630566A (en) * | 1984-08-16 | 1986-12-23 | Board Of Trustees Operating Michigan State University | Microwave or UHF plasma improved apparatus |
US4661196A (en) * | 1984-10-22 | 1987-04-28 | Texas Instruments Incorporated | Plasma etch movable substrate |
US4657621A (en) * | 1984-10-22 | 1987-04-14 | Texas Instruments Incorporated | Low particulate vacuum chamber input/output valve |
US4657618A (en) * | 1984-10-22 | 1987-04-14 | Texas Instruments Incorporated | Powered load lock electrode/substrate assembly including robot arm, optimized for plasma process uniformity and rate |
US4657617A (en) * | 1984-10-22 | 1987-04-14 | Texas Instruments Incorporated | Anodized aluminum substrate for plasma etch reactor |
US4654106A (en) * | 1984-10-22 | 1987-03-31 | Texas Instruments Incorporated | Automated plasma reactor |
US4657620A (en) * | 1984-10-22 | 1987-04-14 | Texas Instruments Incorporated | Automated single slice powered load lock plasma reactor |
US4659413A (en) * | 1984-10-24 | 1987-04-21 | Texas Instruments Incorporated | Automated single slice cassette load lock plasma reactor |
US4603056A (en) * | 1985-04-25 | 1986-07-29 | International Business Machines Corporation | Surface treatment of a molybdenum screening mask |
US4834022A (en) * | 1985-11-08 | 1989-05-30 | Focus Semiconductor Systems, Inc. | CVD reactor and gas injection system |
US4708766A (en) * | 1986-11-07 | 1987-11-24 | Texas Instruments Incorporated | Hydrogen iodide etch of tin oxide |
US4807004A (en) * | 1986-11-26 | 1989-02-21 | Texas Instruments Incorporated | Tin oxide CCD imager |
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
US5171525A (en) * | 1987-02-25 | 1992-12-15 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US5087418A (en) * | 1987-02-25 | 1992-02-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4943417A (en) * | 1987-02-25 | 1990-07-24 | Adir Jacob | Apparatus for dry sterilization of medical devices and materials |
US4976920A (en) * | 1987-07-14 | 1990-12-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4917586A (en) * | 1987-02-25 | 1990-04-17 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4931261A (en) * | 1987-02-25 | 1990-06-05 | Adir Jacob | Apparatus for dry sterilization of medical devices and materials |
US5200158A (en) * | 1987-02-25 | 1993-04-06 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4818488A (en) * | 1987-02-25 | 1989-04-04 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4801427A (en) * | 1987-02-25 | 1989-01-31 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US5198034A (en) * | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
DD271776A1 (de) * | 1988-05-06 | 1989-09-13 | Elektromat Veb | Vorrichtung zur gaszufuehrung und -ableitung fuer die gasphasenbearbeitung von werkstuecken |
US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
DE4140158A1 (de) * | 1991-12-05 | 1993-06-09 | Krupp Widia Gmbh, 4300 Essen, De | Verfahren und vorrichtung zur hartstoffbeschichtung von substratkoerpern |
JPH05243160A (ja) * | 1992-02-28 | 1993-09-21 | Nec Yamagata Ltd | 半導体デバイス製造用プラズマcvd装置 |
US6002109A (en) | 1995-07-10 | 1999-12-14 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
KR100268432B1 (ko) * | 1998-09-05 | 2000-11-01 | 윤종용 | 플라즈마 에칭을 위한 장치 |
AU2001283944A1 (en) * | 2000-09-22 | 2002-04-02 | Aixtron Ag | Gas inlet mechanism for cvd-method and device |
DE10153463A1 (de) * | 2001-10-30 | 2003-05-15 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten |
DE10157946A1 (de) * | 2001-11-27 | 2003-06-05 | Osram Opto Semiconductors Gmbh | Vorrichtung und Verfahren zum Wachsen von Schichten auf ein Substrat |
JP3791432B2 (ja) * | 2002-02-27 | 2006-06-28 | 住友電気工業株式会社 | 半導体製造用加熱装置 |
TWI220786B (en) * | 2002-09-11 | 2004-09-01 | Au Optronics Corp | Supporting structure |
DE10320597A1 (de) | 2003-04-30 | 2004-12-02 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist |
US20050011459A1 (en) * | 2003-07-15 | 2005-01-20 | Heng Liu | Chemical vapor deposition reactor |
US20050178336A1 (en) * | 2003-07-15 | 2005-08-18 | Heng Liu | Chemical vapor deposition reactor having multiple inlets |
KR100534209B1 (ko) * | 2003-07-29 | 2005-12-08 | 삼성전자주식회사 | 반도체소자 제조용 화학기상증착 공정설비 |
US6995545B2 (en) * | 2003-08-18 | 2006-02-07 | Mks Instruments, Inc. | Control system for a sputtering system |
KR100782380B1 (ko) * | 2005-01-24 | 2007-12-07 | 삼성전자주식회사 | 반도체 제조장치 |
US7897495B2 (en) * | 2006-12-12 | 2011-03-01 | Applied Materials, Inc. | Formation of epitaxial layer containing silicon and carbon |
US9064960B2 (en) * | 2007-01-31 | 2015-06-23 | Applied Materials, Inc. | Selective epitaxy process control |
US8216419B2 (en) * | 2008-03-28 | 2012-07-10 | Bridgelux, Inc. | Drilled CVD shower head |
US20090096349A1 (en) * | 2007-04-26 | 2009-04-16 | Moshtagh Vahid S | Cross flow cvd reactor |
US8668775B2 (en) * | 2007-10-31 | 2014-03-11 | Toshiba Techno Center Inc. | Machine CVD shower head |
US8298338B2 (en) * | 2007-12-26 | 2012-10-30 | Samsung Electronics Co., Ltd. | Chemical vapor deposition apparatus |
KR101004822B1 (ko) * | 2008-04-18 | 2010-12-28 | 삼성엘이디 주식회사 | 화학 기상 증착 장치 |
KR100982987B1 (ko) * | 2008-04-18 | 2010-09-17 | 삼성엘이디 주식회사 | 화학 기상 증착 장치 |
JP6925548B1 (ja) * | 2020-07-08 | 2021-08-25 | 信越化学工業株式会社 | 酸化ガリウム半導体膜の製造方法及び成膜装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2580131A (en) * | 1947-02-25 | 1951-12-25 | Chandler & Price Co | Method and apparatus for coating a lithographic plate |
DE1150366B (de) * | 1958-12-09 | 1963-06-20 | Siemens Ag | Verfahren zur Herstellung von Reinstsilicium |
CH409694A (de) * | 1962-11-06 | 1966-03-15 | Berghaus Elektrophysik Anst | Verfahren zur Behandlung von Teilen eines Kugelschreibers |
US3309221A (en) * | 1963-03-25 | 1967-03-14 | Minnesota Mining & Mfg | Surface activation of passive polymers and articles produced thereby |
GB1136218A (en) * | 1965-12-14 | 1968-12-11 | Standard Telephones Cables Ltd | Improvements in or relating to the manufacture of semiconductor optical devices |
GB1104935A (en) * | 1964-05-08 | 1968-03-06 | Standard Telephones Cables Ltd | Improvements in or relating to a method of forming a layer of an inorganic compound |
US3329601A (en) * | 1964-09-15 | 1967-07-04 | Donald M Mattox | Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial |
US3364833A (en) * | 1965-02-03 | 1968-01-23 | Ibm | Wash ammonia development device |
US3323436A (en) * | 1965-03-17 | 1967-06-06 | Ibm | Method and apparatus for development of film |
US3424629A (en) * | 1965-12-13 | 1969-01-28 | Ibm | High capacity epitaxial apparatus and method |
US3408982A (en) * | 1966-08-25 | 1968-11-05 | Emil R. Capita | Vapor plating apparatus including rotatable substrate support |
DE1621358A1 (de) * | 1966-11-08 | 1971-04-29 | Texas Instruments Inc | Verfahren zur Aufbringung duenner Filme aus dielektrischem Material auf ein Substrat |
US3594227A (en) * | 1968-07-12 | 1971-07-20 | Bell Telephone Labor Inc | Method for treating semiconductor slices with gases |
JPS4930319B1 (cs) * | 1969-08-29 | 1974-08-12 | ||
US3696779A (en) * | 1969-12-29 | 1972-10-10 | Kokusai Electric Co Ltd | Vapor growth device |
-
1971
- 1971-10-27 US US00192957A patent/US3757733A/en not_active Expired - Lifetime
-
1972
- 1972-10-02 GB GB4527772A patent/GB1408056A/en not_active Expired
- 1972-10-20 DE DE2251571A patent/DE2251571C3/de not_active Expired
- 1972-10-26 JP JP10756672A patent/JPS5324915B2/ja not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52150790A (en) * | 1976-06-10 | 1977-12-14 | Univ Sydney | Process and apparatus for reactionary vacuum evaporation |
JPS572272B2 (cs) * | 1976-06-10 | 1982-01-14 | ||
WO2008105365A1 (ja) * | 2007-02-28 | 2008-09-04 | Ulvac, Inc. | 成膜装置及び成膜方法 |
JP5091943B2 (ja) * | 2007-02-28 | 2012-12-05 | 株式会社アルバック | 成膜装置及び成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
DE2251571B2 (de) | 1979-10-31 |
DE2251571A1 (de) | 1973-05-03 |
DE2251571C3 (de) | 1985-05-15 |
US3757733A (en) | 1973-09-11 |
GB1408056A (en) | 1975-10-01 |
JPS5324915B2 (cs) | 1978-07-24 |