JPS4819113B1 - - Google Patents

Info

Publication number
JPS4819113B1
JPS4819113B1 JP44067192A JP6719269A JPS4819113B1 JP S4819113 B1 JPS4819113 B1 JP S4819113B1 JP 44067192 A JP44067192 A JP 44067192A JP 6719269 A JP6719269 A JP 6719269A JP S4819113 B1 JPS4819113 B1 JP S4819113B1
Authority
JP
Japan
Prior art keywords
substrate
edge area
type region
type
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44067192A
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP44067192A priority Critical patent/JPS4819113B1/ja
Priority to US67141A priority patent/US3688165A/en
Priority to GB4114370A priority patent/GB1318444A/en
Priority to DE2042586A priority patent/DE2042586C3/de
Publication of JPS4819113B1 publication Critical patent/JPS4819113B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W72/075—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P54/00—
    • H10W72/90—
    • H10W70/60—
    • H10W70/682—
    • H10W72/5363—
    • H10W72/5449—
    • H10W72/59—
    • H10W72/932—
    • H10W72/952—
    • H10W90/756—
JP44067192A 1969-08-27 1969-08-27 Pending JPS4819113B1 (cg-RX-API-DMAC10.html)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP44067192A JPS4819113B1 (cg-RX-API-DMAC10.html) 1969-08-27 1969-08-27
US67141A US3688165A (en) 1969-08-27 1970-08-26 Field effect semiconductor devices
GB4114370A GB1318444A (en) 1969-08-27 1970-08-26 Field effect semiconductor devices
DE2042586A DE2042586C3 (de) 1969-08-27 1970-08-27 Halbleitereinrichtung mit mindestens einem Feldeffekttransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44067192A JPS4819113B1 (cg-RX-API-DMAC10.html) 1969-08-27 1969-08-27

Publications (1)

Publication Number Publication Date
JPS4819113B1 true JPS4819113B1 (cg-RX-API-DMAC10.html) 1973-06-11

Family

ID=13337780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44067192A Pending JPS4819113B1 (cg-RX-API-DMAC10.html) 1969-08-27 1969-08-27

Country Status (4)

Country Link
US (1) US3688165A (cg-RX-API-DMAC10.html)
JP (1) JPS4819113B1 (cg-RX-API-DMAC10.html)
DE (1) DE2042586C3 (cg-RX-API-DMAC10.html)
GB (1) GB1318444A (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4076558A (en) * 1977-01-31 1978-02-28 International Business Machines Corporation Method of high current ion implantation and charge reduction by simultaneous kerf implant
JPS58157151A (ja) * 1982-03-15 1983-09-19 Mitsubishi Electric Corp 半導体集積回路装置
US5936454A (en) * 1993-06-01 1999-08-10 Motorola, Inc. Lateral bipolar transistor operating with independent base and gate biasing

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1043472B (de) * 1956-02-06 1958-11-13 Siemens Ag Halbleiterbauelement zur Stromstabilisierung
NL267390A (cg-RX-API-DMAC10.html) * 1960-09-28
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
US3284723A (en) * 1962-07-02 1966-11-08 Westinghouse Electric Corp Oscillatory circuit and monolithic semiconductor device therefor
NL297601A (cg-RX-API-DMAC10.html) * 1962-09-07 Rca Corp
GB993388A (en) * 1964-02-05 1965-05-26 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
DE1514495C3 (de) * 1965-07-01 1974-10-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiteranordnung
GB1217880A (en) * 1967-10-13 1970-12-31 Rca Corp Lateral transistor with auxiliary control electrode
NL154061B (nl) * 1967-11-04 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US3570112A (en) * 1967-12-01 1971-03-16 Nat Defence Canada Radiation hardening of insulated gate field effect transistors
US3573509A (en) * 1968-09-09 1971-04-06 Texas Instruments Inc Device for reducing bipolar effects in mos integrated circuits

Also Published As

Publication number Publication date
DE2042586C3 (de) 1984-01-26
GB1318444A (en) 1973-05-31
US3688165A (en) 1972-08-29
DE2042586B2 (de) 1978-11-16
DE2042586A1 (de) 1971-03-11

Similar Documents

Publication Publication Date Title
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
GB1129200A (en) High frequency field effect transistor
GB1153428A (en) Improvements in Semiconductor Devices.
GB1155578A (en) Field Effect Transistor
GB1140139A (en) Process for the production of the semiconductor element and a semiconductor element produced by this process
ES370557A1 (es) Un dispositivo semiconductor.
ES393035A1 (es) Un dispositivo semiconductor.
GB1134019A (en) Improvements in semi-conductor devices
GB1109371A (en) Metal-oxide-semiconductor field effect transistor
GB1306570A (en) Field effect semiconductor device
GB1188799A (en) Insulated Gate Field Effect Devices.
GB983266A (en) Semiconductor switching devices
JPS4819113B1 (cg-RX-API-DMAC10.html)
GB1200757A (en) Uhf amplifier
GB1131675A (en) Semiconductor device
ES402165A1 (es) Un dispositivo semiconductor monolitico.
GB1282616A (en) Semiconductor devices
GB1276791A (en) Semiconductor device
ES374056A1 (es) Dispositivo de barrera de pontencial.
GB1073707A (en) A pnpn semi-conductor component
GB1078273A (en) Semiconductor device
JPS6454762A (en) Insulated gate field effect transistor
JPS5588372A (en) Lateral type transistor
GB1102197A (en) Semi-conductor elements
GB1077851A (en) Transistors