JPH11504613A5 - - Google Patents

Info

Publication number
JPH11504613A5
JPH11504613A5 JP1996533541A JP53354196A JPH11504613A5 JP H11504613 A5 JPH11504613 A5 JP H11504613A5 JP 1996533541 A JP1996533541 A JP 1996533541A JP 53354196 A JP53354196 A JP 53354196A JP H11504613 A5 JPH11504613 A5 JP H11504613A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1996533541A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11504613A (ja
Filing date
Publication date
Priority claimed from US08/433,033 external-priority patent/US5820681A/en
Application filed filed Critical
Publication of JPH11504613A publication Critical patent/JPH11504613A/ja
Publication of JPH11504613A5 publication Critical patent/JPH11504613A5/ja
Pending legal-status Critical Current

Links

JP8533541A 1995-05-03 1996-05-03 単体るつぼ Pending JPH11504613A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/433,033 1995-05-03
US08/433,033 US5820681A (en) 1995-05-03 1995-05-03 Unibody crucible and effusion cell employing such a crucible
PCT/US1996/006267 WO1996035091A1 (en) 1995-05-03 1996-05-03 Unibody crucible

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010271283A Division JP5174137B2 (ja) 1995-05-03 2010-12-06 単体るつぼ

Publications (2)

Publication Number Publication Date
JPH11504613A JPH11504613A (ja) 1999-04-27
JPH11504613A5 true JPH11504613A5 (enExample) 2005-09-08

Family

ID=23718594

Family Applications (2)

Application Number Title Priority Date Filing Date
JP8533541A Pending JPH11504613A (ja) 1995-05-03 1996-05-03 単体るつぼ
JP2010271283A Expired - Lifetime JP5174137B2 (ja) 1995-05-03 2010-12-06 単体るつぼ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010271283A Expired - Lifetime JP5174137B2 (ja) 1995-05-03 2010-12-06 単体るつぼ

Country Status (7)

Country Link
US (3) US5820681A (enExample)
EP (2) EP1215307A3 (enExample)
JP (2) JPH11504613A (enExample)
AT (1) ATE224525T1 (enExample)
AU (2) AU5636796A (enExample)
DE (1) DE69623765T2 (enExample)
WO (2) WO1996034994A1 (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3212522B2 (ja) * 1996-12-27 2001-09-25 信越化学工業株式会社 分子線エピタキシー用熱分解窒化硼素るつぼ
US6053981A (en) * 1998-09-15 2000-04-25 Coherent, Inc. Effusion cell and method of use in molecular beam epitaxy
US6202591B1 (en) * 1998-11-12 2001-03-20 Flex Products, Inc. Linear aperture deposition apparatus and coating process
US6140624A (en) * 1999-07-02 2000-10-31 Advanced Ceramics Corporation Pyrolytic boron nitride radiation heater
WO2001051160A1 (en) * 2000-01-12 2001-07-19 Applied Epi, Inc. Ultra-low temperature effusion cell
JP2001220286A (ja) 2000-02-02 2001-08-14 Sharp Corp 分子線源および分子線エピタキシ装置
US7194197B1 (en) * 2000-03-16 2007-03-20 Global Solar Energy, Inc. Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer
US6551405B1 (en) * 2000-09-22 2003-04-22 The Board Of Trustees Of The University Of Arkansas Tool and method for in situ vapor phase deposition source material reloading and maintenance
DE10056686B4 (de) * 2000-11-15 2005-09-29 Forschungsverbund Berlin E.V. Verdampferzelle und ein Verfahren zur Herstellung von Aufdampfschichten
JP2003002778A (ja) * 2001-06-26 2003-01-08 International Manufacturing & Engineering Services Co Ltd 薄膜堆積用分子線セル
US6926920B2 (en) * 2002-06-11 2005-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Chemical vapor deposition (CVD) calibration method providing enhanced uniformity
JP4344631B2 (ja) * 2004-03-02 2009-10-14 長州産業株式会社 有機物薄膜堆積用分子線源
US20050232824A1 (en) * 2004-04-14 2005-10-20 Pangrcic Robert A High temperature electrolyte testing container
US20050229856A1 (en) * 2004-04-20 2005-10-20 Malik Roger J Means and method for a liquid metal evaporation source with integral level sensor and external reservoir
US7493691B2 (en) * 2004-05-20 2009-02-24 Honeywell International Inc. Co-molding metallic-lined phenolic components
JP4442558B2 (ja) * 2005-01-06 2010-03-31 三星モバイルディスプレイ株式會社 蒸発源の加熱制御方法，蒸発源の冷却制御方法および蒸発源の制御方法
EP1851355B1 (en) * 2005-02-22 2011-04-13 E-Science, Inc. Effusion cell valve
US7732737B2 (en) * 2005-10-11 2010-06-08 Kimberly-Clark Worldwide, Inc. Micro powered warming container
JP4673190B2 (ja) * 2005-11-01 2011-04-20 長州産業株式会社 薄膜堆積用分子線源とその分子線量制御方法
US20070218199A1 (en) * 2006-02-13 2007-09-20 Veeco Instruments Inc. Crucible eliminating line of sight between a source material and a target
US8747554B2 (en) * 2006-06-20 2014-06-10 Momentive Performance Materials Inc. Multi-piece ceramic crucible and method for making thereof
EP1967606A1 (en) * 2007-03-08 2008-09-10 Applied Materials, Inc. Evaporation crucible and evaporation apparatus with adapted evaporation characteristic
US20090169781A1 (en) * 2007-12-31 2009-07-02 Marc Schaepkens Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom
US8198123B2 (en) 2008-04-15 2012-06-12 Global Solar Energy, Inc. Apparatus and methods for manufacturing thin-film solar cells
WO2010019213A2 (en) * 2008-08-11 2010-02-18 Veeco Instruments Inc. Vacuum deposition sources having heated effusion orifices
US8512806B2 (en) * 2008-08-12 2013-08-20 Momentive Performance Materials Inc. Large volume evaporation source
WO2011065998A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
WO2011065999A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US9062369B2 (en) * 2009-03-25 2015-06-23 Veeco Instruments, Inc. Deposition of high vapor pressure materials
WO2011082179A1 (en) * 2009-12-28 2011-07-07 Global Solar Energy, Inc. Apparatus and methods of mixing and depositing thin film photovoltaic compositions
TWI477646B (zh) * 2010-08-09 2015-03-21 Hon Hai Prec Ind Co Ltd 化學氣相沉積設備
JP5720379B2 (ja) 2011-03-31 2015-05-20 日本電気株式会社 水流発電装置
DE102011121148A1 (de) * 2011-12-15 2013-06-20 Dr. Eberl Mbe-Komponenten Gmbh Vorrichtung zum Verdampfen eines Verdampfungsguts
DE102011122591A1 (de) * 2011-12-30 2013-07-04 Dr. Eberl Mbe-Komponenten Gmbh Vorrichtung zum Verdampfen eines Verdampfungsguts
WO2015066428A2 (en) 2013-11-01 2015-05-07 Bnnt, Llc Induction-coupled plasma synthesis of boron nitride nanotubes
TWI513839B (zh) * 2013-12-12 2015-12-21 Nat Inst Chung Shan Science & Technology An apparatus and method for improving sublimation deposition rate
CA2945977C (en) 2014-04-24 2019-12-31 Bnnt, Llc Continuous boron nitride nanotube fibers
WO2016070179A1 (en) * 2014-11-01 2016-05-06 Bnnt, Llc Target holders, multiple-incidence angle, and multizone heating for bnnt synthesis
US10083890B2 (en) 2014-12-17 2018-09-25 Bnnt, Llc Boron nitride nanotube enhanced electrical components
CA2985795C (en) 2015-05-13 2023-11-07 Bnnt, Llc Boron nitride nanotube neutron detector
EP3297951B1 (en) 2015-05-21 2023-02-22 Bnnt, Llc Boron nitride nanotube synthesis via direct induction
EP3245313B1 (en) * 2015-07-13 2018-12-05 Applied Materials, Inc. Evaporation source.
JP7037493B2 (ja) 2016-03-08 2022-03-16 テラパワー， エルエルシー ゲッター素子およびゲッター素子の製造方法
TWI737718B (zh) 2016-04-25 2021-09-01 美商創新先進材料股份有限公司 含有瀉流源的沉積系統及相關方法
WO2018044370A2 (en) 2016-05-20 2018-03-08 Terrapower, Llc Sodium-cesium vapor trap system and method
CN207038182U (zh) 2017-03-29 2018-02-23 泰拉能源有限责任公司 铯收集器
JP7078462B2 (ja) * 2018-06-13 2022-05-31 株式会社アルバック 真空蒸着装置用の蒸着源
WO2019239192A1 (en) * 2018-06-15 2019-12-19 Arcelormittal Vacuum deposition facility and method for coating a substrate
US11626213B2 (en) 2019-08-23 2023-04-11 Terrapower, Llc Sodium vaporizer and methods
WO2021077100A1 (en) * 2019-10-17 2021-04-22 Veeco Instruments Inc. Molecular beam epitaxy systems with variable substrate-to-source arrangements
US12480853B2 (en) * 2021-09-28 2025-11-25 University Of Central Florida Research Foundation, Inc. Crucibles for thermogravimetric analysis (TGA)
WO2024006828A1 (en) * 2022-06-28 2024-01-04 Cornell University Reduction of surface oxidation in molecular beam epitaxy sources
CN119085320B (zh) * 2024-11-06 2025-05-02 苏州焜原光电有限公司 一种测温坩埚组件及测温方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US464680A (en) * 1891-12-08 Wind-wheel
FR1164034A (fr) * 1956-12-27 1958-10-06 Perfectionnements aux creusets pour le dépôt de couches métallisées
US3467583A (en) * 1966-05-16 1969-09-16 Camin Lab Process for making a hollow body with protective inner layer for high-temperature applications
US4035460A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US4217855A (en) * 1974-10-23 1980-08-19 Futaba Denshi Kogyo K.K. Vaporized-metal cluster ion source and ionized-cluster beam deposition device
USD282894S (en) 1983-10-11 1986-03-11 General Foods Corporation Cruet
USD295145S (en) 1984-09-17 1988-04-12 Maison Paul Jeanjean Carafe
US4646680A (en) * 1985-12-23 1987-03-03 General Electric Company Crucible for use in molecular beam epitaxial processing
FR2598721B1 (fr) * 1986-05-15 1988-09-30 Commissariat Energie Atomique Cellule pour epitaxie par jets moleculaires et procede associe
JPS6353259A (ja) * 1986-08-22 1988-03-07 Mitsubishi Electric Corp 薄膜形成方法
US4856457A (en) * 1987-02-20 1989-08-15 Hughes Aircraft Company Cluster source for nonvolatile species, having independent temperature control
US4833319A (en) * 1987-02-27 1989-05-23 Hughes Aircraft Company Carrier gas cluster source for thermally conditioned clusters
JPH01153595A (ja) * 1987-12-09 1989-06-15 Nec Corp 分子線発生装置
US5034604A (en) * 1989-08-29 1991-07-23 Board Of Regents, The University Of Texas System Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction
JP2619068B2 (ja) * 1989-09-08 1997-06-11 三菱電機株式会社 薄膜形成装置
US5032366A (en) * 1990-04-30 1991-07-16 Union Carbide Coatings Service Technology Corporation Boron nitride boat and process for producing it
US5158750A (en) * 1990-06-06 1992-10-27 Praxair S.T. Technology, Inc. Boron nitride crucible
JPH04274316A (ja) * 1991-02-28 1992-09-30 Mitsubishi Electric Corp 分子線エピタキシー用セル
JPH05294787A (ja) * 1992-04-22 1993-11-09 Mitsubishi Electric Corp 結晶成長方法及びその装置
DE4225169C2 (de) * 1992-07-30 1994-09-22 Juergen Dipl Phys Dr Gspann Vorrichtung und Verfahren zur Erzeugung von Agglomeratstrahlen
US5453233A (en) * 1993-04-05 1995-09-26 Cvd, Inc. Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique
JP3369643B2 (ja) * 1993-07-01 2003-01-20 信越化学工業株式会社 熱分解窒化ほう素成形体の製造方法
JP2595894B2 (ja) * 1994-04-26 1997-04-02 日本電気株式会社 水素ラジカル発生装置

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