JPH11297944A - 強誘電体メモリおよびその形成方法 - Google Patents
強誘電体メモリおよびその形成方法Info
- Publication number
- JPH11297944A JPH11297944A JP10101034A JP10103498A JPH11297944A JP H11297944 A JPH11297944 A JP H11297944A JP 10101034 A JP10101034 A JP 10101034A JP 10103498 A JP10103498 A JP 10103498A JP H11297944 A JPH11297944 A JP H11297944A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ferroelectric
- upper electrode
- electrode
- ferroelectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000015654 memory Effects 0.000 title claims description 73
- 238000004519 manufacturing process Methods 0.000 title description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 185
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 71
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000001301 oxygen Substances 0.000 claims abstract description 60
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 60
- 238000010438 heat treatment Methods 0.000 claims abstract description 49
- 238000004544 sputter deposition Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 229910052762 osmium Inorganic materials 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910001361 White metal Inorganic materials 0.000 claims 1
- 239000010969 white metal Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 37
- 239000001257 hydrogen Substances 0.000 abstract description 27
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 23
- 239000012535 impurity Substances 0.000 abstract description 17
- 230000006866 deterioration Effects 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 191
- 239000010410 layer Substances 0.000 description 65
- 239000010955 niobium Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000002542 deteriorative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10101034A JPH11297944A (ja) | 1998-04-13 | 1998-04-13 | 強誘電体メモリおよびその形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10101034A JPH11297944A (ja) | 1998-04-13 | 1998-04-13 | 強誘電体メモリおよびその形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11297944A true JPH11297944A (ja) | 1999-10-29 |
| JPH11297944A5 JPH11297944A5 (enExample) | 2005-09-22 |
Family
ID=14289894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10101034A Abandoned JPH11297944A (ja) | 1998-04-13 | 1998-04-13 | 強誘電体メモリおよびその形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11297944A (enExample) |
-
1998
- 1998-04-13 JP JP10101034A patent/JPH11297944A/ja not_active Abandoned
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050408 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050408 |
|
| A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20070724 |