JPH11261075A5 - - Google Patents

Info

Publication number
JPH11261075A5
JPH11261075A5 JP1998082948A JP8294898A JPH11261075A5 JP H11261075 A5 JPH11261075 A5 JP H11261075A5 JP 1998082948 A JP1998082948 A JP 1998082948A JP 8294898 A JP8294898 A JP 8294898A JP H11261075 A5 JPH11261075 A5 JP H11261075A5
Authority
JP
Japan
Prior art keywords
aluminum
layer
region
semiconductor device
porous alumina
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1998082948A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11261075A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP8294898A priority Critical patent/JPH11261075A/ja
Priority claimed from JP8294898A external-priority patent/JPH11261075A/ja
Priority to US09/210,781 priority patent/US6369410B1/en
Publication of JPH11261075A publication Critical patent/JPH11261075A/ja
Priority to US10/101,830 priority patent/US6613614B2/en
Publication of JPH11261075A5 publication Critical patent/JPH11261075A5/ja
Withdrawn legal-status Critical Current

Links

JP8294898A 1997-12-15 1998-03-13 半導体装置およびその作製方法 Withdrawn JPH11261075A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8294898A JPH11261075A (ja) 1998-03-13 1998-03-13 半導体装置およびその作製方法
US09/210,781 US6369410B1 (en) 1997-12-15 1998-12-15 Semiconductor device and method of manufacturing the semiconductor device
US10/101,830 US6613614B2 (en) 1997-12-15 2002-03-21 Semiconductor device and method of manufacturing the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8294898A JPH11261075A (ja) 1998-03-13 1998-03-13 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPH11261075A JPH11261075A (ja) 1999-09-24
JPH11261075A5 true JPH11261075A5 (enExample) 2005-07-28

Family

ID=13788453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8294898A Withdrawn JPH11261075A (ja) 1997-12-15 1998-03-13 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPH11261075A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW495854B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW513753B (en) 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
JP4954387B2 (ja) * 2000-05-29 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100792780B1 (ko) * 2006-06-09 2008-01-14 학교법인 포항공과대학교 저전압 구동의 플렉서블 유기 박막 트랜지스터 및 이의제조방법
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100848341B1 (ko) * 2007-06-13 2008-07-25 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) * 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
US20120286264A1 (en) * 2010-05-14 2012-11-15 Takeshi Suzuki Flexible semiconductor device, method for manufacturing the same and image display device
JP2012080110A (ja) * 2011-11-18 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
CN103474471B (zh) 2013-08-29 2016-05-25 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置

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