JPH11261075A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法Info
- Publication number
- JPH11261075A JPH11261075A JP8294898A JP8294898A JPH11261075A JP H11261075 A JPH11261075 A JP H11261075A JP 8294898 A JP8294898 A JP 8294898A JP 8294898 A JP8294898 A JP 8294898A JP H11261075 A JPH11261075 A JP H11261075A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- aluminum
- semiconductor device
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 121
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 121
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 54
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000012535 impurity Substances 0.000 claims abstract description 51
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 46
- 239000011574 phosphorus Substances 0.000 claims abstract description 46
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000005247 gettering Methods 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims description 90
- 239000002184 metal Substances 0.000 claims description 88
- 238000010438 heat treatment Methods 0.000 claims description 63
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 43
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 21
- 238000002425 crystallisation Methods 0.000 claims description 20
- 230000008025 crystallization Effects 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010407 anodic oxide Substances 0.000 claims description 9
- 238000007743 anodising Methods 0.000 claims description 7
- 230000001131 transforming effect Effects 0.000 claims description 6
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 5
- 230000001737 promoting effect Effects 0.000 claims description 5
- 235000002906 tartaric acid Nutrition 0.000 claims description 5
- 239000011975 tartaric acid Substances 0.000 claims description 5
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 238000002048 anodisation reaction Methods 0.000 claims description 2
- 230000029052 metamorphosis Effects 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 32
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract description 32
- 150000002500 ions Chemical class 0.000 abstract description 18
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 abstract description 11
- 230000006378 damage Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 10
- 238000002513 implantation Methods 0.000 abstract description 4
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 227
- 239000010408 film Substances 0.000 description 160
- 238000005468 ion implantation Methods 0.000 description 19
- 239000011159 matrix material Substances 0.000 description 15
- 230000001133 acceleration Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- 238000001994 activation Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 230000004913 activation Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000005984 hydrogenation reaction Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- -1 phosphorus ions Chemical class 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8294898A JPH11261075A (ja) | 1998-03-13 | 1998-03-13 | 半導体装置およびその作製方法 |
| US09/210,781 US6369410B1 (en) | 1997-12-15 | 1998-12-15 | Semiconductor device and method of manufacturing the semiconductor device |
| US10/101,830 US6613614B2 (en) | 1997-12-15 | 2002-03-21 | Semiconductor device and method of manufacturing the semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8294898A JPH11261075A (ja) | 1998-03-13 | 1998-03-13 | 半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11261075A true JPH11261075A (ja) | 1999-09-24 |
| JPH11261075A5 JPH11261075A5 (enExample) | 2005-07-28 |
Family
ID=13788453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8294898A Withdrawn JPH11261075A (ja) | 1997-12-15 | 1998-03-13 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11261075A (enExample) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057165A (ja) * | 2000-05-29 | 2002-02-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6759678B2 (en) | 2000-03-06 | 2004-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7218361B2 (en) | 2000-03-27 | 2007-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and manufacturing method thereof |
| KR100792780B1 (ko) * | 2006-06-09 | 2008-01-14 | 학교법인 포항공과대학교 | 저전압 구동의 플렉서블 유기 박막 트랜지스터 및 이의제조방법 |
| JP2008311649A (ja) * | 2007-06-13 | 2008-12-25 | Samsung Sdi Co Ltd | 薄膜トランジスタ、その製造方法、及びこれを含む有機電界発光表示装置 |
| JP2009049419A (ja) * | 2007-08-22 | 2009-03-05 | Samsung Sdi Co Ltd | 薄膜トランジスタ、これを具備した有機電界発光表示装置、およびこれらの製造方法 |
| JP2012080110A (ja) * | 2011-11-18 | 2012-04-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US8283668B2 (en) | 2007-08-23 | 2012-10-09 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same |
| US8318523B2 (en) | 2008-04-11 | 2012-11-27 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same |
| US8436360B2 (en) | 2008-03-27 | 2013-05-07 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same |
| JPWO2011142088A1 (ja) * | 2010-05-14 | 2013-07-22 | パナソニック株式会社 | フレキシブル半導体装置およびその製造方法ならびに画像表示装置 |
| CN103474471A (zh) * | 2013-08-29 | 2013-12-25 | 京东方科技集团股份有限公司 | 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置 |
| US8790967B2 (en) | 2007-05-31 | 2014-07-29 | Samsung Display Co., Ltd. | Method of fabricating polycrystalline silicon layer, TFT fabricated using the same, method of fabricating TFT, and organic light emitting diode display device having the same |
-
1998
- 1998-03-13 JP JP8294898A patent/JPH11261075A/ja not_active Withdrawn
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6759678B2 (en) | 2000-03-06 | 2004-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7112817B2 (en) | 2000-03-06 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic appliance including transistor having LDD region |
| KR100767612B1 (ko) * | 2000-03-06 | 2007-10-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 제조 방법 |
| US9601515B2 (en) | 2000-03-06 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8124973B2 (en) | 2000-03-06 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic appliance including transistor having LDD region |
| US8772778B2 (en) | 2000-03-06 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7218361B2 (en) | 2000-03-27 | 2007-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and manufacturing method thereof |
| US7486344B2 (en) | 2000-03-27 | 2009-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and manufacturing method thereof |
| JP2002057165A (ja) * | 2000-05-29 | 2002-02-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| KR100792780B1 (ko) * | 2006-06-09 | 2008-01-14 | 학교법인 포항공과대학교 | 저전압 구동의 플렉서블 유기 박막 트랜지스터 및 이의제조방법 |
| US8790967B2 (en) | 2007-05-31 | 2014-07-29 | Samsung Display Co., Ltd. | Method of fabricating polycrystalline silicon layer, TFT fabricated using the same, method of fabricating TFT, and organic light emitting diode display device having the same |
| JP2008311649A (ja) * | 2007-06-13 | 2008-12-25 | Samsung Sdi Co Ltd | 薄膜トランジスタ、その製造方法、及びこれを含む有機電界発光表示装置 |
| US8513669B2 (en) | 2007-08-22 | 2013-08-20 | Samsung Display Co., Ltd. | Thin film transistor including metal or metal silicide structure in contact with semiconductor layer and organic light emitting diode display device having the thin film transistor |
| JP2009049419A (ja) * | 2007-08-22 | 2009-03-05 | Samsung Sdi Co Ltd | 薄膜トランジスタ、これを具備した有機電界発光表示装置、およびこれらの製造方法 |
| US8283668B2 (en) | 2007-08-23 | 2012-10-09 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same |
| US8436360B2 (en) | 2008-03-27 | 2013-05-07 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same |
| US8318523B2 (en) | 2008-04-11 | 2012-11-27 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same |
| JPWO2011142088A1 (ja) * | 2010-05-14 | 2013-07-22 | パナソニック株式会社 | フレキシブル半導体装置およびその製造方法ならびに画像表示装置 |
| JP2012080110A (ja) * | 2011-11-18 | 2012-04-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| CN103474471A (zh) * | 2013-08-29 | 2013-12-25 | 京东方科技集团股份有限公司 | 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置 |
| US9455324B2 (en) | 2013-08-29 | 2016-09-27 | Boe Technology Group Co., Ltd. | Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same, and display device |
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