JPH11224970A5 - - Google Patents

Info

Publication number
JPH11224970A5
JPH11224970A5 JP1998318842A JP31884298A JPH11224970A5 JP H11224970 A5 JPH11224970 A5 JP H11224970A5 JP 1998318842 A JP1998318842 A JP 1998318842A JP 31884298 A JP31884298 A JP 31884298A JP H11224970 A5 JPH11224970 A5 JP H11224970A5
Authority
JP
Japan
Prior art keywords
optoelectronic device
integrated optoelectronic
components
contact
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998318842A
Other languages
English (en)
Japanese (ja)
Other versions
JP4763867B2 (ja
JPH11224970A (ja
Filing date
Publication date
Priority claimed from EP97309032A external-priority patent/EP0917260B1/en
Application filed filed Critical
Publication of JPH11224970A publication Critical patent/JPH11224970A/ja
Publication of JPH11224970A5 publication Critical patent/JPH11224970A5/ja
Application granted granted Critical
Publication of JP4763867B2 publication Critical patent/JP4763867B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP31884298A 1997-11-11 1998-11-10 光電子装置コンポーネントの電気的分離 Expired - Fee Related JP4763867B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP97309032A EP0917260B1 (en) 1997-11-11 1997-11-11 Electrical isolation of opto-electronic device components
GB97309032.7 1997-11-11

Publications (3)

Publication Number Publication Date
JPH11224970A JPH11224970A (ja) 1999-08-17
JPH11224970A5 true JPH11224970A5 (cg-RX-API-DMAC7.html) 2005-12-15
JP4763867B2 JP4763867B2 (ja) 2011-08-31

Family

ID=8229607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31884298A Expired - Fee Related JP4763867B2 (ja) 1997-11-11 1998-11-10 光電子装置コンポーネントの電気的分離

Country Status (5)

Country Link
US (1) US6191464B1 (cg-RX-API-DMAC7.html)
EP (1) EP0917260B1 (cg-RX-API-DMAC7.html)
JP (1) JP4763867B2 (cg-RX-API-DMAC7.html)
CA (1) CA2247560A1 (cg-RX-API-DMAC7.html)
DE (1) DE69721272T2 (cg-RX-API-DMAC7.html)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE520139C2 (sv) 2001-11-30 2003-06-03 Optillion Ab Lasermodulator med elektriskt separerade laser- och modulatorsektioner
AU2003251607A1 (en) * 2003-06-24 2005-02-14 Emcore Corporation Mechanical protection for semiconductor edge-emitting ridge waveguide lasers
JP5086141B2 (ja) * 2008-03-17 2012-11-28 日本オクラロ株式会社 電界吸収型変調器
US9054813B2 (en) * 2013-03-13 2015-06-09 Source Photonics (Chengdu) Co. Ltd. Optical transceiver with isolated modulator contacts and/or inputs
US9306372B2 (en) 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
US9059801B1 (en) 2013-03-14 2015-06-16 Emcore Corporation Optical modulator
US9306672B2 (en) * 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
JP2015109319A (ja) * 2013-12-03 2015-06-11 日本電信電話株式会社 狭線幅レーザ
EP3192136B1 (en) * 2014-09-08 2020-10-07 Lumentum Technology UK Limited Monolithically integrated tunable semiconductor laser
US9564733B2 (en) 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
JP6421708B2 (ja) * 2015-06-29 2018-11-14 住友電気工業株式会社 半導体光素子を作製する方法及び半導体光素子
CN107306009B (zh) * 2016-04-25 2021-04-13 住友电工光电子器件创新株式会社 在承载体上提供共面线的光发射器
US10074959B2 (en) 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation
WO2018091094A1 (en) 2016-11-17 2018-05-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for fabricating an electro-absorption modulated laser and electro-absorption modulated laser
CN115428280B (zh) * 2020-04-27 2025-04-04 三菱电机株式会社 半导体光集成元件
US11681166B2 (en) * 2020-10-28 2023-06-20 II-VI Delware, Inc. Electro-absorption optical modulator including ground shield
CN113540969B (zh) * 2021-07-16 2022-04-22 杰创半导体(苏州)有限公司 自带偏置电压电路的电调制激光器及其制作方法
CN117394138B (zh) * 2023-10-07 2024-10-29 武汉云岭光电股份有限公司 电吸收调制器激光器及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5067809A (en) * 1989-06-09 1991-11-26 Oki Electric Industry Co., Ltd. Opto-semiconductor device and method of fabrication of the same
JP2606078B2 (ja) * 1993-06-25 1997-04-30 日本電気株式会社 半導体レーザアレイおよびその製造方法
JP3254053B2 (ja) * 1993-08-09 2002-02-04 株式会社日立製作所 光集積回路
JPH07221400A (ja) * 1994-01-31 1995-08-18 Fujitsu Ltd 光変調器集積化発光装置及びその製造方法
JP2842292B2 (ja) * 1994-09-16 1998-12-24 日本電気株式会社 半導体光集積装置および製造方法

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