JP4763867B2 - 光電子装置コンポーネントの電気的分離 - Google Patents

光電子装置コンポーネントの電気的分離 Download PDF

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Publication number
JP4763867B2
JP4763867B2 JP31884298A JP31884298A JP4763867B2 JP 4763867 B2 JP4763867 B2 JP 4763867B2 JP 31884298 A JP31884298 A JP 31884298A JP 31884298 A JP31884298 A JP 31884298A JP 4763867 B2 JP4763867 B2 JP 4763867B2
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Japan
Prior art keywords
contact
layer
optoelectronic device
integrated optoelectronic
ground
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Expired - Fee Related
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JP31884298A
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English (en)
Japanese (ja)
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JPH11224970A5 (cg-RX-API-DMAC7.html
JPH11224970A (ja
Inventor
ジョセフ・アラン・バーナード
Original Assignee
アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド
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Publication of JPH11224970A publication Critical patent/JPH11224970A/ja
Publication of JPH11224970A5 publication Critical patent/JPH11224970A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Couplings Of Light Guides (AREA)
JP31884298A 1997-11-11 1998-11-10 光電子装置コンポーネントの電気的分離 Expired - Fee Related JP4763867B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP97309032A EP0917260B1 (en) 1997-11-11 1997-11-11 Electrical isolation of opto-electronic device components
GB97309032.7 1997-11-11

Publications (3)

Publication Number Publication Date
JPH11224970A JPH11224970A (ja) 1999-08-17
JPH11224970A5 JPH11224970A5 (cg-RX-API-DMAC7.html) 2005-12-15
JP4763867B2 true JP4763867B2 (ja) 2011-08-31

Family

ID=8229607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31884298A Expired - Fee Related JP4763867B2 (ja) 1997-11-11 1998-11-10 光電子装置コンポーネントの電気的分離

Country Status (5)

Country Link
US (1) US6191464B1 (cg-RX-API-DMAC7.html)
EP (1) EP0917260B1 (cg-RX-API-DMAC7.html)
JP (1) JP4763867B2 (cg-RX-API-DMAC7.html)
CA (1) CA2247560A1 (cg-RX-API-DMAC7.html)
DE (1) DE69721272T2 (cg-RX-API-DMAC7.html)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE520139C2 (sv) 2001-11-30 2003-06-03 Optillion Ab Lasermodulator med elektriskt separerade laser- och modulatorsektioner
AU2003251607A1 (en) * 2003-06-24 2005-02-14 Emcore Corporation Mechanical protection for semiconductor edge-emitting ridge waveguide lasers
JP5086141B2 (ja) * 2008-03-17 2012-11-28 日本オクラロ株式会社 電界吸収型変調器
US9054813B2 (en) * 2013-03-13 2015-06-09 Source Photonics (Chengdu) Co. Ltd. Optical transceiver with isolated modulator contacts and/or inputs
US9306372B2 (en) 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
US9059801B1 (en) 2013-03-14 2015-06-16 Emcore Corporation Optical modulator
US9306672B2 (en) * 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
JP2015109319A (ja) * 2013-12-03 2015-06-11 日本電信電話株式会社 狭線幅レーザ
EP3192136B1 (en) * 2014-09-08 2020-10-07 Lumentum Technology UK Limited Monolithically integrated tunable semiconductor laser
US9564733B2 (en) 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
JP6421708B2 (ja) * 2015-06-29 2018-11-14 住友電気工業株式会社 半導体光素子を作製する方法及び半導体光素子
CN107306009B (zh) * 2016-04-25 2021-04-13 住友电工光电子器件创新株式会社 在承载体上提供共面线的光发射器
US10074959B2 (en) 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation
WO2018091094A1 (en) 2016-11-17 2018-05-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for fabricating an electro-absorption modulated laser and electro-absorption modulated laser
CN115428280B (zh) * 2020-04-27 2025-04-04 三菱电机株式会社 半导体光集成元件
US11681166B2 (en) * 2020-10-28 2023-06-20 II-VI Delware, Inc. Electro-absorption optical modulator including ground shield
CN113540969B (zh) * 2021-07-16 2022-04-22 杰创半导体(苏州)有限公司 自带偏置电压电路的电调制激光器及其制作方法
CN117394138B (zh) * 2023-10-07 2024-10-29 武汉云岭光电股份有限公司 电吸收调制器激光器及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5067809A (en) * 1989-06-09 1991-11-26 Oki Electric Industry Co., Ltd. Opto-semiconductor device and method of fabrication of the same
JP2606078B2 (ja) * 1993-06-25 1997-04-30 日本電気株式会社 半導体レーザアレイおよびその製造方法
JP3254053B2 (ja) * 1993-08-09 2002-02-04 株式会社日立製作所 光集積回路
JPH07221400A (ja) * 1994-01-31 1995-08-18 Fujitsu Ltd 光変調器集積化発光装置及びその製造方法
JP2842292B2 (ja) * 1994-09-16 1998-12-24 日本電気株式会社 半導体光集積装置および製造方法

Also Published As

Publication number Publication date
DE69721272T2 (de) 2004-02-05
EP0917260A1 (en) 1999-05-19
DE69721272D1 (de) 2003-05-28
JPH11224970A (ja) 1999-08-17
US6191464B1 (en) 2001-02-20
CA2247560A1 (en) 1999-05-11
EP0917260B1 (en) 2003-04-23

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