DE69721272D1 - Elektrische Isolierung optoelektronischer Bauelemente - Google Patents

Elektrische Isolierung optoelektronischer Bauelemente

Info

Publication number
DE69721272D1
DE69721272D1 DE69721272T DE69721272T DE69721272D1 DE 69721272 D1 DE69721272 D1 DE 69721272D1 DE 69721272 T DE69721272 T DE 69721272T DE 69721272 T DE69721272 T DE 69721272T DE 69721272 D1 DE69721272 D1 DE 69721272D1
Authority
DE
Germany
Prior art keywords
electrical isolation
optoelectronic components
optoelectronic
components
isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69721272T
Other languages
English (en)
Other versions
DE69721272T2 (de
Inventor
Dr Barnard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of DE69721272D1 publication Critical patent/DE69721272D1/de
Application granted granted Critical
Publication of DE69721272T2 publication Critical patent/DE69721272T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Optical Integrated Circuits (AREA)
DE69721272T 1997-11-11 1997-11-11 Elektrische Isolierung optoelektronischer Bauelemente Expired - Lifetime DE69721272T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97309032A EP0917260B1 (de) 1997-11-11 1997-11-11 Elektrische Isolierung optoelektronischer Bauelemente

Publications (2)

Publication Number Publication Date
DE69721272D1 true DE69721272D1 (de) 2003-05-28
DE69721272T2 DE69721272T2 (de) 2004-02-05

Family

ID=8229607

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69721272T Expired - Lifetime DE69721272T2 (de) 1997-11-11 1997-11-11 Elektrische Isolierung optoelektronischer Bauelemente

Country Status (5)

Country Link
US (1) US6191464B1 (de)
EP (1) EP0917260B1 (de)
JP (1) JP4763867B2 (de)
CA (1) CA2247560A1 (de)
DE (1) DE69721272T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE520139C2 (sv) 2001-11-30 2003-06-03 Optillion Ab Lasermodulator med elektriskt separerade laser- och modulatorsektioner
AU2003251607A1 (en) * 2003-06-24 2005-02-14 Emcore Corporation Mechanical protection for semiconductor edge-emitting ridge waveguide lasers
JP5086141B2 (ja) * 2008-03-17 2012-11-28 日本オクラロ株式会社 電界吸収型変調器
US9054813B2 (en) * 2013-03-13 2015-06-09 Source Photonics (Chengdu) Co. Ltd. Optical transceiver with isolated modulator contacts and/or inputs
US9306672B2 (en) * 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
US9059801B1 (en) 2013-03-14 2015-06-16 Emcore Corporation Optical modulator
US9306372B2 (en) 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
JP2015109319A (ja) * 2013-12-03 2015-06-11 日本電信電話株式会社 狭線幅レーザ
WO2016038333A1 (en) * 2014-09-08 2016-03-17 Oclaro Technology Ltd Monolithically integrated tunable semiconductor laser
US9564733B2 (en) 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
JP6421708B2 (ja) * 2015-06-29 2018-11-14 住友電気工業株式会社 半導体光素子を作製する方法及び半導体光素子
CN107306009B (zh) * 2016-04-25 2021-04-13 住友电工光电子器件创新株式会社 在承载体上提供共面线的光发射器
US10074959B2 (en) 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation
EP3542429A1 (de) 2016-11-17 2019-09-25 Fraunhofer Gesellschaft zur Förderung der angewandten Forschung E.V. Verfahren zur herstellung eines elektroabsorptionsmodulierten lasers und elektroabsorptionsmodulierter laser
US11681166B2 (en) * 2020-10-28 2023-06-20 II-VI Delware, Inc. Electro-absorption optical modulator including ground shield
CN113540969B (zh) * 2021-07-16 2022-04-22 杰创半导体(苏州)有限公司 自带偏置电压电路的电调制激光器及其制作方法
CN117394138A (zh) * 2023-10-07 2024-01-12 武汉云岭光电股份有限公司 电吸收调制器激光器及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5067809A (en) * 1989-06-09 1991-11-26 Oki Electric Industry Co., Ltd. Opto-semiconductor device and method of fabrication of the same
JP2606078B2 (ja) * 1993-06-25 1997-04-30 日本電気株式会社 半導体レーザアレイおよびその製造方法
JP3254053B2 (ja) * 1993-08-09 2002-02-04 株式会社日立製作所 光集積回路
JPH07221400A (ja) * 1994-01-31 1995-08-18 Fujitsu Ltd 光変調器集積化発光装置及びその製造方法
JP2842292B2 (ja) * 1994-09-16 1998-12-24 日本電気株式会社 半導体光集積装置および製造方法

Also Published As

Publication number Publication date
CA2247560A1 (en) 1999-05-11
JPH11224970A (ja) 1999-08-17
JP4763867B2 (ja) 2011-08-31
EP0917260B1 (de) 2003-04-23
EP0917260A1 (de) 1999-05-19
US6191464B1 (en) 2001-02-20
DE69721272T2 (de) 2004-02-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES GENERAL IP ( SINGAPORE) PTE. LT

8328 Change in the person/name/address of the agent

Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELLSCHA